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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365579 The hole in a $p$ -type semiconductor is

1 An electron deficiency

2 An electron excess

3 An atom deficiency

4 Positive ion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365580 The mobility of free electrons is greater than that of free holes because

1 They carry negative charge

2 They are light

3 Their mutal collisions are less

4 They require low energy to continue their motion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365581 In $n$ -type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

1 1

2

> 1

3

< 1

, but not zero

4 Zero

Explanation:

If all the donor states in $n$ -type semiconductor are filled, the number of electrons in donor states will increase. Due to it the charge density in donor states will become more than one.

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365582 The electron concentration in an $n$ -type semiconductor is the same as hole concentration in a $p$ -type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

1 Current in

p

-type > current in

n

-type.

2 Current in

n

-type > current in

p

-type.

3 No current will flow in

p

-type, current will only flow in

n

-type.

4 current in

n

-type = current in

p

-type.

Explanation:

In a Semiconductor
$I = n e A v_{d}$
$v_{d} = μ E$
$I = n e A μ E$
$μ =$ mobilite of charge carriers
$μ_{h o l e s} < μ_{f r e e e l e c t r o n}$
$n_{h o l e s} = n_{f r e e e l e c t r o n}$
$I_{p t y p e} < I_{n t y p e}$

NEET - 2021

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped $p$ -type.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

There is possibility of collisions of carriers with impurities. The conductivity of an intrinsic semiconductor is lower than that of a lightly doped $p$ -type semiconductor. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365579 The hole in a $p$ -type semiconductor is

1 An electron deficiency

2 An electron excess

3 An atom deficiency

4 Positive ion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365580 The mobility of free electrons is greater than that of free holes because

1 They carry negative charge

2 They are light

3 Their mutal collisions are less

4 They require low energy to continue their motion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365581 In $n$ -type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

1 1

2

> 1

3

< 1

, but not zero

4 Zero

Explanation:

If all the donor states in $n$ -type semiconductor are filled, the number of electrons in donor states will increase. Due to it the charge density in donor states will become more than one.

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365582 The electron concentration in an $n$ -type semiconductor is the same as hole concentration in a $p$ -type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

1 Current in

p

-type > current in

n

-type.

2 Current in

n

-type > current in

p

-type.

3 No current will flow in

p

-type, current will only flow in

n

-type.

4 current in

n

-type = current in

p

-type.

Explanation:

In a Semiconductor
$I = n e A v_{d}$
$v_{d} = μ E$
$I = n e A μ E$
$μ =$ mobilite of charge carriers
$μ_{h o l e s} < μ_{f r e e e l e c t r o n}$
$n_{h o l e s} = n_{f r e e e l e c t r o n}$
$I_{p t y p e} < I_{n t y p e}$

NEET - 2021

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped $p$ -type.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

There is possibility of collisions of carriers with impurities. The conductivity of an intrinsic semiconductor is lower than that of a lightly doped $p$ -type semiconductor. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365579 The hole in a $p$ -type semiconductor is

1 An electron deficiency

2 An electron excess

3 An atom deficiency

4 Positive ion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365580 The mobility of free electrons is greater than that of free holes because

1 They carry negative charge

2 They are light

3 Their mutal collisions are less

4 They require low energy to continue their motion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365581 In $n$ -type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

1 1

2

> 1

3

< 1

, but not zero

4 Zero

Explanation:

If all the donor states in $n$ -type semiconductor are filled, the number of electrons in donor states will increase. Due to it the charge density in donor states will become more than one.

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365582 The electron concentration in an $n$ -type semiconductor is the same as hole concentration in a $p$ -type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

1 Current in

p

-type > current in

n

-type.

2 Current in

n

-type > current in

p

-type.

3 No current will flow in

p

-type, current will only flow in

n

-type.

4 current in

n

-type = current in

p

-type.

Explanation:

In a Semiconductor
$I = n e A v_{d}$
$v_{d} = μ E$
$I = n e A μ E$
$μ =$ mobilite of charge carriers
$μ_{h o l e s} < μ_{f r e e e l e c t r o n}$
$n_{h o l e s} = n_{f r e e e l e c t r o n}$
$I_{p t y p e} < I_{n t y p e}$

NEET - 2021

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped $p$ -type.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

There is possibility of collisions of carriers with impurities. The conductivity of an intrinsic semiconductor is lower than that of a lightly doped $p$ -type semiconductor. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365579 The hole in a $p$ -type semiconductor is

1 An electron deficiency

2 An electron excess

3 An atom deficiency

4 Positive ion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365580 The mobility of free electrons is greater than that of free holes because

1 They carry negative charge

2 They are light

3 Their mutal collisions are less

4 They require low energy to continue their motion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365581 In $n$ -type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

1 1

2

> 1

3

< 1

, but not zero

4 Zero

Explanation:

If all the donor states in $n$ -type semiconductor are filled, the number of electrons in donor states will increase. Due to it the charge density in donor states will become more than one.

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365582 The electron concentration in an $n$ -type semiconductor is the same as hole concentration in a $p$ -type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

1 Current in

p

-type > current in

n

-type.

2 Current in

n

-type > current in

p

-type.

3 No current will flow in

p

-type, current will only flow in

n

-type.

4 current in

n

-type = current in

p

-type.

Explanation:

In a Semiconductor
$I = n e A v_{d}$
$v_{d} = μ E$
$I = n e A μ E$
$μ =$ mobilite of charge carriers
$μ_{h o l e s} < μ_{f r e e e l e c t r o n}$
$n_{h o l e s} = n_{f r e e e l e c t r o n}$
$I_{p t y p e} < I_{n t y p e}$

NEET - 2021

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped $p$ -type.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

There is possibility of collisions of carriers with impurities. The conductivity of an intrinsic semiconductor is lower than that of a lightly doped $p$ -type semiconductor. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365579 The hole in a $p$ -type semiconductor is

1 An electron deficiency

2 An electron excess

3 An atom deficiency

4 Positive ion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365580 The mobility of free electrons is greater than that of free holes because

1 They carry negative charge

2 They are light

3 Their mutal collisions are less

4 They require low energy to continue their motion

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365581 In $n$ -type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

1 1

2

> 1

3

< 1

, but not zero

4 Zero

Explanation:

If all the donor states in $n$ -type semiconductor are filled, the number of electrons in donor states will increase. Due to it the charge density in donor states will become more than one.

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365582 The electron concentration in an $n$ -type semiconductor is the same as hole concentration in a $p$ -type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

1 Current in

p

-type > current in

n

-type.

2 Current in

n

-type > current in

p

-type.

3 No current will flow in

p

-type, current will only flow in

n

-type.

4 current in

n

-type = current in

p

-type.

Explanation:

In a Semiconductor
$I = n e A v_{d}$
$v_{d} = μ E$
$I = n e A μ E$
$μ =$ mobilite of charge carriers
$μ_{h o l e s} < μ_{f r e e e l e c t r o n}$
$n_{h o l e s} = n_{f r e e e l e c t r o n}$
$I_{p t y p e} < I_{n t y p e}$

NEET - 2021

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped $p$ -type.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

There is possibility of collisions of carriers with impurities. The conductivity of an intrinsic semiconductor is lower than that of a lightly doped $p$ -type semiconductor. So correct option is (3).