365575 In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an

365576 If the ratio of the concentration of electrons to that of holes in a semiconductor is \(\frac{7}{5}\) and the ratio of currents is \(\frac{7}{4},\) then the ratio of drift velocities is

365577 If \({n_e}\) and \({n_h}\) are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then

365578 Assertion :
An \(N\)-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason :
An \(N\)-type semiconductor is obtained by doping an intrinsic semiconductor with a trivalent impurity.

365575 In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an

365576 If the ratio of the concentration of electrons to that of holes in a semiconductor is \(\frac{7}{5}\) and the ratio of currents is \(\frac{7}{4},\) then the ratio of drift velocities is

365577 If \({n_e}\) and \({n_h}\) are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then

365578 Assertion :
An \(N\)-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason :
An \(N\)-type semiconductor is obtained by doping an intrinsic semiconductor with a trivalent impurity.

365575 In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an

365576 If the ratio of the concentration of electrons to that of holes in a semiconductor is \(\frac{7}{5}\) and the ratio of currents is \(\frac{7}{4},\) then the ratio of drift velocities is

365577 If \({n_e}\) and \({n_h}\) are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then

365578 Assertion :
An \(N\)-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason :
An \(N\)-type semiconductor is obtained by doping an intrinsic semiconductor with a trivalent impurity.

365575 In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an

365576 If the ratio of the concentration of electrons to that of holes in a semiconductor is \(\frac{7}{5}\) and the ratio of currents is \(\frac{7}{4},\) then the ratio of drift velocities is

365577 If \({n_e}\) and \({n_h}\) are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then

365578 Assertion :
An \(N\)-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason :
An \(N\)-type semiconductor is obtained by doping an intrinsic semiconductor with a trivalent impurity.