365579 The hole in a \(p\)-type semiconductor is

365580 The mobility of free electrons is greater than that of free holes because

365581 In \(n\)-type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

365582 The electron concentration in an \(n\)-type semiconductor is the same as hole concentration in a \(p\)-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped \(p\)-type.

365579 The hole in a \(p\)-type semiconductor is

365580 The mobility of free electrons is greater than that of free holes because

365581 In \(n\)-type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

365582 The electron concentration in an \(n\)-type semiconductor is the same as hole concentration in a \(p\)-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped \(p\)-type.

365579 The hole in a \(p\)-type semiconductor is

365580 The mobility of free electrons is greater than that of free holes because

365581 In \(n\)-type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

365582 The electron concentration in an \(n\)-type semiconductor is the same as hole concentration in a \(p\)-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped \(p\)-type.

365579 The hole in a \(p\)-type semiconductor is

365580 The mobility of free electrons is greater than that of free holes because

365581 In \(n\)-type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

365582 The electron concentration in an \(n\)-type semiconductor is the same as hole concentration in a \(p\)-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped \(p\)-type.

365579 The hole in a \(p\)-type semiconductor is

365580 The mobility of free electrons is greater than that of free holes because

365581 In \(n\)-type semiconductor when all donor states
are filled, then the net charge density in the donor states becomes:

365582 The electron concentration in an \(n\)-type semiconductor is the same as hole concentration in a \(p\)-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them:

365583 Assertion :
At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Reason :
The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped \(p\)-type.