Semiconductor Diode
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal \(pn\) junction diode shown in figure below. The current through the diode is
supporting img

1 Zero
2 \(10\;mA\)
3 \(20\;mA\)
4 \(50\;mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is

1 Forward biased
2 Reverse biased
3 Unbiased
4 Both forward and reverse biased
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of \(pn\) junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a \(p-n\) junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a \(p-n\) junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
JEE - 2023
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \({R_1}\) will be:
supporting img

1 \(2.5\,A\)
2 \(10.0\,A\)
3 \(1.43\,A\)
4 \(3.13\,A\)
NEET - 2016
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal \(pn\) junction diode shown in figure below. The current through the diode is
supporting img

1 Zero
2 \(10\;mA\)
3 \(20\;mA\)
4 \(50\;mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is

1 Forward biased
2 Reverse biased
3 Unbiased
4 Both forward and reverse biased
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of \(pn\) junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a \(p-n\) junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a \(p-n\) junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
JEE - 2023
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \({R_1}\) will be:
supporting img

1 \(2.5\,A\)
2 \(10.0\,A\)
3 \(1.43\,A\)
4 \(3.13\,A\)
NEET - 2016
For More Updates join with Us
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal \(pn\) junction diode shown in figure below. The current through the diode is
supporting img

1 Zero
2 \(10\;mA\)
3 \(20\;mA\)
4 \(50\;mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is

1 Forward biased
2 Reverse biased
3 Unbiased
4 Both forward and reverse biased
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of \(pn\) junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a \(p-n\) junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a \(p-n\) junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
JEE - 2023
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \({R_1}\) will be:
supporting img

1 \(2.5\,A\)
2 \(10.0\,A\)
3 \(1.43\,A\)
4 \(3.13\,A\)
NEET - 2016
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal \(pn\) junction diode shown in figure below. The current through the diode is
supporting img

1 Zero
2 \(10\;mA\)
3 \(20\;mA\)
4 \(50\;mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is

1 Forward biased
2 Reverse biased
3 Unbiased
4 Both forward and reverse biased
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of \(pn\) junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a \(p-n\) junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a \(p-n\) junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
JEE - 2023
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \({R_1}\) will be:
supporting img

1 \(2.5\,A\)
2 \(10.0\,A\)
3 \(1.43\,A\)
4 \(3.13\,A\)
NEET - 2016
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal \(pn\) junction diode shown in figure below. The current through the diode is
supporting img

1 Zero
2 \(10\;mA\)
3 \(20\;mA\)
4 \(50\;mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is

1 Forward biased
2 Reverse biased
3 Unbiased
4 Both forward and reverse biased
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of \(pn\) junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a \(p-n\) junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a \(p-n\) junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
JEE - 2023
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \({R_1}\) will be:
supporting img

1 \(2.5\,A\)
2 \(10.0\,A\)
3 \(1.43\,A\)
4 \(3.13\,A\)
NEET - 2016