NEET Test Series from KOTA - 10 Papers In MS WORD
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365290
In the circuit shown, the diodes have a forward resistance of \(50\,\Omega \) and infinite backward resistance. The current through the \(100\,\Omega \) resistance is
1 0
2 0.02 \(A\)
3 0.03 \(A\)
4 0.036 \(A\)
Explanation:
In the circuit, the upper diode \({D_{1}}\) is forward biased and the lower diode \({D_{2}}\) is reverse biased. Thus there will be no current through lower diode junction.Total resistance of the circuit \( = (150 + 50 + 100) = 300\;\Omega \) Current in circuit, \(I = \frac{V}{R} = \frac{6}{{300}} = 0.02\;\Omega .\) So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365291
The current through an ideal \(PN\)-junction shown in the following circuit diagram will be
1 \(1\,mA\)
2 \({\rm{Zero}}\)
3 \(30\,mA\)
4 \(10\,mA\)
Explanation:
The diode is in reverse biasing so current through it is zero.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365292
Pick out the incorrect statement regarding reverse saturation current in the \(p\)-\(n\) junction diode
1 This current doubles for every \(100^\circ C\) rise of temperature
2 This current is due to minority carriers
3 The current carriers are produced by thermal agitation
4 Reverse saturation current is also known as leakage current
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365293
Consider the junction diode as ideal. The value of current flowing through \(AB\) is:
1 \(0\,A\)
2 \({10^{ - 2}}A\)
3 \({10^{ - 1}}A\)
4 \({10^{ - 3}}A\)
Explanation:
Since diode is in forward bias \(i = \frac{{\Delta V}}{R} = \frac{{4 - \left( { - 6} \right)}}{{1 \times {{10}^3}}} = \frac{{10}}{{{{10}^3}}} = {10^{ - 2}}A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365290
In the circuit shown, the diodes have a forward resistance of \(50\,\Omega \) and infinite backward resistance. The current through the \(100\,\Omega \) resistance is
1 0
2 0.02 \(A\)
3 0.03 \(A\)
4 0.036 \(A\)
Explanation:
In the circuit, the upper diode \({D_{1}}\) is forward biased and the lower diode \({D_{2}}\) is reverse biased. Thus there will be no current through lower diode junction.Total resistance of the circuit \( = (150 + 50 + 100) = 300\;\Omega \) Current in circuit, \(I = \frac{V}{R} = \frac{6}{{300}} = 0.02\;\Omega .\) So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365291
The current through an ideal \(PN\)-junction shown in the following circuit diagram will be
1 \(1\,mA\)
2 \({\rm{Zero}}\)
3 \(30\,mA\)
4 \(10\,mA\)
Explanation:
The diode is in reverse biasing so current through it is zero.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365292
Pick out the incorrect statement regarding reverse saturation current in the \(p\)-\(n\) junction diode
1 This current doubles for every \(100^\circ C\) rise of temperature
2 This current is due to minority carriers
3 The current carriers are produced by thermal agitation
4 Reverse saturation current is also known as leakage current
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365293
Consider the junction diode as ideal. The value of current flowing through \(AB\) is:
1 \(0\,A\)
2 \({10^{ - 2}}A\)
3 \({10^{ - 1}}A\)
4 \({10^{ - 3}}A\)
Explanation:
Since diode is in forward bias \(i = \frac{{\Delta V}}{R} = \frac{{4 - \left( { - 6} \right)}}{{1 \times {{10}^3}}} = \frac{{10}}{{{{10}^3}}} = {10^{ - 2}}A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365290
In the circuit shown, the diodes have a forward resistance of \(50\,\Omega \) and infinite backward resistance. The current through the \(100\,\Omega \) resistance is
1 0
2 0.02 \(A\)
3 0.03 \(A\)
4 0.036 \(A\)
Explanation:
In the circuit, the upper diode \({D_{1}}\) is forward biased and the lower diode \({D_{2}}\) is reverse biased. Thus there will be no current through lower diode junction.Total resistance of the circuit \( = (150 + 50 + 100) = 300\;\Omega \) Current in circuit, \(I = \frac{V}{R} = \frac{6}{{300}} = 0.02\;\Omega .\) So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365291
The current through an ideal \(PN\)-junction shown in the following circuit diagram will be
1 \(1\,mA\)
2 \({\rm{Zero}}\)
3 \(30\,mA\)
4 \(10\,mA\)
Explanation:
The diode is in reverse biasing so current through it is zero.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365292
Pick out the incorrect statement regarding reverse saturation current in the \(p\)-\(n\) junction diode
1 This current doubles for every \(100^\circ C\) rise of temperature
2 This current is due to minority carriers
3 The current carriers are produced by thermal agitation
4 Reverse saturation current is also known as leakage current
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365293
Consider the junction diode as ideal. The value of current flowing through \(AB\) is:
1 \(0\,A\)
2 \({10^{ - 2}}A\)
3 \({10^{ - 1}}A\)
4 \({10^{ - 3}}A\)
Explanation:
Since diode is in forward bias \(i = \frac{{\Delta V}}{R} = \frac{{4 - \left( { - 6} \right)}}{{1 \times {{10}^3}}} = \frac{{10}}{{{{10}^3}}} = {10^{ - 2}}A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365290
In the circuit shown, the diodes have a forward resistance of \(50\,\Omega \) and infinite backward resistance. The current through the \(100\,\Omega \) resistance is
1 0
2 0.02 \(A\)
3 0.03 \(A\)
4 0.036 \(A\)
Explanation:
In the circuit, the upper diode \({D_{1}}\) is forward biased and the lower diode \({D_{2}}\) is reverse biased. Thus there will be no current through lower diode junction.Total resistance of the circuit \( = (150 + 50 + 100) = 300\;\Omega \) Current in circuit, \(I = \frac{V}{R} = \frac{6}{{300}} = 0.02\;\Omega .\) So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365291
The current through an ideal \(PN\)-junction shown in the following circuit diagram will be
1 \(1\,mA\)
2 \({\rm{Zero}}\)
3 \(30\,mA\)
4 \(10\,mA\)
Explanation:
The diode is in reverse biasing so current through it is zero.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365292
Pick out the incorrect statement regarding reverse saturation current in the \(p\)-\(n\) junction diode
1 This current doubles for every \(100^\circ C\) rise of temperature
2 This current is due to minority carriers
3 The current carriers are produced by thermal agitation
4 Reverse saturation current is also known as leakage current
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365293
Consider the junction diode as ideal. The value of current flowing through \(AB\) is:
1 \(0\,A\)
2 \({10^{ - 2}}A\)
3 \({10^{ - 1}}A\)
4 \({10^{ - 3}}A\)
Explanation:
Since diode is in forward bias \(i = \frac{{\Delta V}}{R} = \frac{{4 - \left( { - 6} \right)}}{{1 \times {{10}^3}}} = \frac{{10}}{{{{10}^3}}} = {10^{ - 2}}A\)
