QBManager

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal $p n$ junction diode shown in figure below. The current through the diode is
supporting img

1 Zero

2

10 m A

3

20 m A

4

50 m A

Explanation:

Diode/circuit is reverse bias then effective voltage across diode is $3 - 1 = 2 V$ .
$∴$ Current across the diode $= \frac{1}{100} = 20 m A .$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a $p$ - $n$ junction is greater than the drift current when the junction is

1 Forward biased

2 Reverse biased

3 Unbiased

4 Both forward and reverse biased

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of $p n$ junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

Forward biasing a p-n junction reduces resistance due to a substantial increase in forward current and decreased depletion layer width. Reverse biasing increases resistance and the depletion layer widens. So correct option is $(3)$ .

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a $p - n$ junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a $p - n$ junction is from the $n$ -side to the $p$ -side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As, diffusion current is due to the movement of majority charge carriers and drift current is due to movement of minority charge carriers under electric field. When junction is forward biased, the movement of electron is eased from $n$ side to $p$ side which increases the diffusion current and direction of diffusion current is from $p$ -region to $n$ -region.

JEE - 2023

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_{1}$ will be:
supporting img

1

2.5 A

2

10.0 A

3

1.43 A

4

3.13 A

Explanation:

Diode $D_{1}$ is reversed biased. Then no current will flow through $D_{1}$ .
$∴ I = \frac{10}{4} = 2.5 A$
supporting img

NEET - 2016

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal $p n$ junction diode shown in figure below. The current through the diode is
supporting img

1 Zero

2

10 m A

3

20 m A

4

50 m A

Explanation:

Diode/circuit is reverse bias then effective voltage across diode is $3 - 1 = 2 V$ .
$∴$ Current across the diode $= \frac{1}{100} = 20 m A .$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a $p$ - $n$ junction is greater than the drift current when the junction is

1 Forward biased

2 Reverse biased

3 Unbiased

4 Both forward and reverse biased

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of $p n$ junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

Forward biasing a p-n junction reduces resistance due to a substantial increase in forward current and decreased depletion layer width. Reverse biasing increases resistance and the depletion layer widens. So correct option is $(3)$ .

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a $p - n$ junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a $p - n$ junction is from the $n$ -side to the $p$ -side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As, diffusion current is due to the movement of majority charge carriers and drift current is due to movement of minority charge carriers under electric field. When junction is forward biased, the movement of electron is eased from $n$ side to $p$ side which increases the diffusion current and direction of diffusion current is from $p$ -region to $n$ -region.

JEE - 2023

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_{1}$ will be:
supporting img

1

2.5 A

2

10.0 A

3

1.43 A

4

3.13 A

Explanation:

Diode $D_{1}$ is reversed biased. Then no current will flow through $D_{1}$ .
$∴ I = \frac{10}{4} = 2.5 A$
supporting img

NEET - 2016

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal $p n$ junction diode shown in figure below. The current through the diode is
supporting img

1 Zero

2

10 m A

3

20 m A

4

50 m A

Explanation:

Diode/circuit is reverse bias then effective voltage across diode is $3 - 1 = 2 V$ .
$∴$ Current across the diode $= \frac{1}{100} = 20 m A .$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a $p$ - $n$ junction is greater than the drift current when the junction is

1 Forward biased

2 Reverse biased

3 Unbiased

4 Both forward and reverse biased

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of $p n$ junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

Forward biasing a p-n junction reduces resistance due to a substantial increase in forward current and decreased depletion layer width. Reverse biasing increases resistance and the depletion layer widens. So correct option is $(3)$ .

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a $p - n$ junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a $p - n$ junction is from the $n$ -side to the $p$ -side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As, diffusion current is due to the movement of majority charge carriers and drift current is due to movement of minority charge carriers under electric field. When junction is forward biased, the movement of electron is eased from $n$ side to $p$ side which increases the diffusion current and direction of diffusion current is from $p$ -region to $n$ -region.

JEE - 2023

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_{1}$ will be:
supporting img

1

2.5 A

2

10.0 A

3

1.43 A

4

3.13 A

Explanation:

Diode $D_{1}$ is reversed biased. Then no current will flow through $D_{1}$ .
$∴ I = \frac{10}{4} = 2.5 A$
supporting img

NEET - 2016

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal $p n$ junction diode shown in figure below. The current through the diode is
supporting img

1 Zero

2

10 m A

3

20 m A

4

50 m A

Explanation:

Diode/circuit is reverse bias then effective voltage across diode is $3 - 1 = 2 V$ .
$∴$ Current across the diode $= \frac{1}{100} = 20 m A .$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a $p$ - $n$ junction is greater than the drift current when the junction is

1 Forward biased

2 Reverse biased

3 Unbiased

4 Both forward and reverse biased

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of $p n$ junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

Forward biasing a p-n junction reduces resistance due to a substantial increase in forward current and decreased depletion layer width. Reverse biasing increases resistance and the depletion layer widens. So correct option is $(3)$ .

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a $p - n$ junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a $p - n$ junction is from the $n$ -side to the $p$ -side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As, diffusion current is due to the movement of majority charge carriers and drift current is due to movement of minority charge carriers under electric field. When junction is forward biased, the movement of electron is eased from $n$ side to $p$ side which increases the diffusion current and direction of diffusion current is from $p$ -region to $n$ -region.

JEE - 2023

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_{1}$ will be:
supporting img

1

2.5 A

2

10.0 A

3

1.43 A

4

3.13 A

Explanation:

Diode $D_{1}$ is reversed biased. Then no current will flow through $D_{1}$ .
$∴ I = \frac{10}{4} = 2.5 A$
supporting img

NEET - 2016

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365294 An ideal $p n$ junction diode shown in figure below. The current through the diode is
supporting img

1 Zero

2

10 m A

3

20 m A

4

50 m A

Explanation:

Diode/circuit is reverse bias then effective voltage across diode is $3 - 1 = 2 V$ .
$∴$ Current across the diode $= \frac{1}{100} = 20 m A .$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365295 The diffusion current in a $p$ - $n$ junction is greater than the drift current when the junction is

1 Forward biased

2 Reverse biased

3 Unbiased

4 Both forward and reverse biased

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365296 Assertion :
The resistance of $p n$ junction is low when forward biased and is high when reverse baised.
Reason :
In reversed biased. the depletion layer is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

Forward biasing a p-n junction reduces resistance due to a substantial increase in forward current and decreased depletion layer width. Reverse biasing increases resistance and the depletion layer widens. So correct option is $(3)$ .

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365297 Read the Assertion and Reason carefully to mark the correct options given below:
Assertion :
Diffusion current in a $p - n$ junction is greater than the drift current in magnitude if the junction is forward biased.
Reason :
Diffusion current in a $p - n$ junction is from the $n$ -side to the $p$ -side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As, diffusion current is due to the movement of majority charge carriers and drift current is due to movement of minority charge carriers under electric field. When junction is forward biased, the movement of electron is eased from $n$ side to $p$ side which increases the diffusion current and direction of diffusion current is from $p$ -region to $n$ -region.

JEE - 2023

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365298 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_{1}$ will be:
supporting img

1

2.5 A

2

10.0 A

3

1.43 A

4

3.13 A

Explanation:

Diode $D_{1}$ is reversed biased. Then no current will flow through $D_{1}$ .
$∴ I = \frac{10}{4} = 2.5 A$
supporting img

NEET - 2016