150663 The forbidden energy gap for ' \(\mathrm{Ge}^{\prime}\) crystal at ' 0 ' \(\mathrm{K}\) is

150673 The width of forbidden gap in silicon crystal is \(1.1 \mathrm{eV}\). When the crystal is converted into \(\mathrm{n}\) type semiconductor the distance of Fermi level from conduction band is:

150695 A p-n junction has acceptor impurity concentration of \(10^{17} \mathrm{~cm}^{-3}\) in the \(p\)-side and donor impurity concentration of \(10^{16} \mathrm{~cm}^{-3}\) in the \(n\)-side. What is the contact potential at the junction ( \(k T=\) thermal energy, intrinsic carrier concentration \(\left.\mathrm{n}_{\mathrm{i}}=\mathbf{1 . 4} \times \mathbf{1 0} \mathbf{~}^{10} \mathrm{~cm}^{-3}\right)\) ?

150696 The energy gap of silicon is \(1.14 \mathrm{eV}\). At what wavelength the silicon will stop to absorb the photon?

150663 The forbidden energy gap for ' \(\mathrm{Ge}^{\prime}\) crystal at ' 0 ' \(\mathrm{K}\) is

150673 The width of forbidden gap in silicon crystal is \(1.1 \mathrm{eV}\). When the crystal is converted into \(\mathrm{n}\) type semiconductor the distance of Fermi level from conduction band is:

150695 A p-n junction has acceptor impurity concentration of \(10^{17} \mathrm{~cm}^{-3}\) in the \(p\)-side and donor impurity concentration of \(10^{16} \mathrm{~cm}^{-3}\) in the \(n\)-side. What is the contact potential at the junction ( \(k T=\) thermal energy, intrinsic carrier concentration \(\left.\mathrm{n}_{\mathrm{i}}=\mathbf{1 . 4} \times \mathbf{1 0} \mathbf{~}^{10} \mathrm{~cm}^{-3}\right)\) ?

150696 The energy gap of silicon is \(1.14 \mathrm{eV}\). At what wavelength the silicon will stop to absorb the photon?

150663 The forbidden energy gap for ' \(\mathrm{Ge}^{\prime}\) crystal at ' 0 ' \(\mathrm{K}\) is

150673 The width of forbidden gap in silicon crystal is \(1.1 \mathrm{eV}\). When the crystal is converted into \(\mathrm{n}\) type semiconductor the distance of Fermi level from conduction band is:

150695 A p-n junction has acceptor impurity concentration of \(10^{17} \mathrm{~cm}^{-3}\) in the \(p\)-side and donor impurity concentration of \(10^{16} \mathrm{~cm}^{-3}\) in the \(n\)-side. What is the contact potential at the junction ( \(k T=\) thermal energy, intrinsic carrier concentration \(\left.\mathrm{n}_{\mathrm{i}}=\mathbf{1 . 4} \times \mathbf{1 0} \mathbf{~}^{10} \mathrm{~cm}^{-3}\right)\) ?

150696 The energy gap of silicon is \(1.14 \mathrm{eV}\). At what wavelength the silicon will stop to absorb the photon?

150663 The forbidden energy gap for ' \(\mathrm{Ge}^{\prime}\) crystal at ' 0 ' \(\mathrm{K}\) is

150673 The width of forbidden gap in silicon crystal is \(1.1 \mathrm{eV}\). When the crystal is converted into \(\mathrm{n}\) type semiconductor the distance of Fermi level from conduction band is:

150695 A p-n junction has acceptor impurity concentration of \(10^{17} \mathrm{~cm}^{-3}\) in the \(p\)-side and donor impurity concentration of \(10^{16} \mathrm{~cm}^{-3}\) in the \(n\)-side. What is the contact potential at the junction ( \(k T=\) thermal energy, intrinsic carrier concentration \(\left.\mathrm{n}_{\mathrm{i}}=\mathbf{1 . 4} \times \mathbf{1 0} \mathbf{~}^{10} \mathrm{~cm}^{-3}\right)\) ?

150696 The energy gap of silicon is \(1.14 \mathrm{eV}\). At what wavelength the silicon will stop to absorb the photon?