150697 In a p-n junction, potential barrier of \(200 \mathrm{meV}\) exists across the junction. A hole with a kinetic energy of \(300 \mathrm{meV}\) approaches the junction. Let \(E_1\) and \(E_2\) be kinetic energies of the hole when it crosses the junction, while it approaches the junction from the \(p\)-side and \(n\) side respectively : The value of \(\frac{E_2}{E_1}\) is

150698 Assertion: An N-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason: An N-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.

150473 Which of the following statements is true?

150476 'The dominant contribution to current comes from holes in case of

150484 The electrical conductivity of semiconductors

150697 In a p-n junction, potential barrier of \(200 \mathrm{meV}\) exists across the junction. A hole with a kinetic energy of \(300 \mathrm{meV}\) approaches the junction. Let \(E_1\) and \(E_2\) be kinetic energies of the hole when it crosses the junction, while it approaches the junction from the \(p\)-side and \(n\) side respectively : The value of \(\frac{E_2}{E_1}\) is

150698 Assertion: An N-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason: An N-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.

150473 Which of the following statements is true?

150476 'The dominant contribution to current comes from holes in case of

150484 The electrical conductivity of semiconductors

150697 In a p-n junction, potential barrier of \(200 \mathrm{meV}\) exists across the junction. A hole with a kinetic energy of \(300 \mathrm{meV}\) approaches the junction. Let \(E_1\) and \(E_2\) be kinetic energies of the hole when it crosses the junction, while it approaches the junction from the \(p\)-side and \(n\) side respectively : The value of \(\frac{E_2}{E_1}\) is

150698 Assertion: An N-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason: An N-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.

150473 Which of the following statements is true?

150476 'The dominant contribution to current comes from holes in case of

150484 The electrical conductivity of semiconductors

150697 In a p-n junction, potential barrier of \(200 \mathrm{meV}\) exists across the junction. A hole with a kinetic energy of \(300 \mathrm{meV}\) approaches the junction. Let \(E_1\) and \(E_2\) be kinetic energies of the hole when it crosses the junction, while it approaches the junction from the \(p\)-side and \(n\) side respectively : The value of \(\frac{E_2}{E_1}\) is

150698 Assertion: An N-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason: An N-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.

150473 Which of the following statements is true?

150476 'The dominant contribution to current comes from holes in case of

150484 The electrical conductivity of semiconductors

150697 In a p-n junction, potential barrier of \(200 \mathrm{meV}\) exists across the junction. A hole with a kinetic energy of \(300 \mathrm{meV}\) approaches the junction. Let \(E_1\) and \(E_2\) be kinetic energies of the hole when it crosses the junction, while it approaches the junction from the \(p\)-side and \(n\) side respectively : The value of \(\frac{E_2}{E_1}\) is

150698 Assertion: An N-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason: An N-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.

150473 Which of the following statements is true?

150476 'The dominant contribution to current comes from holes in case of

150484 The electrical conductivity of semiconductors