150632 You are given four semiconductors \(P, Q, R\) and \(S\) with respective band gaps \(4 \mathrm{eV}, 3 \mathrm{eV}, 2 \mathrm{eV}\) and \(1 \mathrm{eV}\) for use in a photodetector to detect \(\lambda=1400 \mathrm{~nm}\). Select the suitable semiconductor.
150638 An intrinsic semiconductor has a resistivity of \(0.50 \Omega\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39 \mathrm{~m}^2 /\) volt sec and \(0.11 \mathrm{~m}^2 /\) volt sec respectively
150662 Suppose a pure \(\mathrm{Si}\) crystal has \(5 \times 10^{\mathbf{2 8}}\) atoms \(\mathrm{m}^{-3}\). It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electron and holes. Given that \(\mathbf{n}_{\mathrm{i}}=1.5 \times 10^{16}\) \(\mathbf{m}^{-3}\)
150632 You are given four semiconductors \(P, Q, R\) and \(S\) with respective band gaps \(4 \mathrm{eV}, 3 \mathrm{eV}, 2 \mathrm{eV}\) and \(1 \mathrm{eV}\) for use in a photodetector to detect \(\lambda=1400 \mathrm{~nm}\). Select the suitable semiconductor.
150638 An intrinsic semiconductor has a resistivity of \(0.50 \Omega\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39 \mathrm{~m}^2 /\) volt sec and \(0.11 \mathrm{~m}^2 /\) volt sec respectively
150662 Suppose a pure \(\mathrm{Si}\) crystal has \(5 \times 10^{\mathbf{2 8}}\) atoms \(\mathrm{m}^{-3}\). It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electron and holes. Given that \(\mathbf{n}_{\mathrm{i}}=1.5 \times 10^{16}\) \(\mathbf{m}^{-3}\)
150632 You are given four semiconductors \(P, Q, R\) and \(S\) with respective band gaps \(4 \mathrm{eV}, 3 \mathrm{eV}, 2 \mathrm{eV}\) and \(1 \mathrm{eV}\) for use in a photodetector to detect \(\lambda=1400 \mathrm{~nm}\). Select the suitable semiconductor.
150638 An intrinsic semiconductor has a resistivity of \(0.50 \Omega\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39 \mathrm{~m}^2 /\) volt sec and \(0.11 \mathrm{~m}^2 /\) volt sec respectively
150662 Suppose a pure \(\mathrm{Si}\) crystal has \(5 \times 10^{\mathbf{2 8}}\) atoms \(\mathrm{m}^{-3}\). It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electron and holes. Given that \(\mathbf{n}_{\mathrm{i}}=1.5 \times 10^{16}\) \(\mathbf{m}^{-3}\)
150632 You are given four semiconductors \(P, Q, R\) and \(S\) with respective band gaps \(4 \mathrm{eV}, 3 \mathrm{eV}, 2 \mathrm{eV}\) and \(1 \mathrm{eV}\) for use in a photodetector to detect \(\lambda=1400 \mathrm{~nm}\). Select the suitable semiconductor.
150638 An intrinsic semiconductor has a resistivity of \(0.50 \Omega\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39 \mathrm{~m}^2 /\) volt sec and \(0.11 \mathrm{~m}^2 /\) volt sec respectively
150662 Suppose a pure \(\mathrm{Si}\) crystal has \(5 \times 10^{\mathbf{2 8}}\) atoms \(\mathrm{m}^{-3}\). It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electron and holes. Given that \(\mathbf{n}_{\mathrm{i}}=1.5 \times 10^{16}\) \(\mathbf{m}^{-3}\)