150588 For a copper block, find the electric field which can give on an average \(1 \mathrm{eV}\) energy to a conduction electron. (The mean free path of conduction electrons in copper is given as \(4 \times\) \(10^{-8} \mathrm{~m}\) )

150604 A semiconductor has equal electron and hole concentration of \(2 \times 10^8 \mathrm{~m}^{-3}\). On doping with a certain impurity, the electron concentration increases to \(4 \times 10^{10} \mathrm{~m}^{-3}\), then the new hole concentration of the semiconductor is

150607 The band gap in a semi-conductor is \(0.6 \mathrm{eV}\). The maximum wavelength of electromagnetic radiation which can create a hole-electron pair in this semiconductor is equal to
[Use hc \(=1242\) eV - nm]

150611 What is the maximum wavelength of electromagnetic radiation that create a electron-hole pair in material with band gap 0.7 eV?. Planck's constant \(4.136 \times 10^{-15} \mathrm{eV}\)-Sec, velocity of light \(=3 \times 10^8 \mathrm{~m} / \mathrm{s}\).

150612 In a p-type semiconductor, the concentration of holes is \(2 \times 10^{15} \mathbf{~ c m}^{-3}\). The intrinsic carrier concentration is \(2 \times 10^{10} \mathbf{c m}^{-3}\). The concentration of electrons will be

150588 For a copper block, find the electric field which can give on an average \(1 \mathrm{eV}\) energy to a conduction electron. (The mean free path of conduction electrons in copper is given as \(4 \times\) \(10^{-8} \mathrm{~m}\) )

150604 A semiconductor has equal electron and hole concentration of \(2 \times 10^8 \mathrm{~m}^{-3}\). On doping with a certain impurity, the electron concentration increases to \(4 \times 10^{10} \mathrm{~m}^{-3}\), then the new hole concentration of the semiconductor is

150607 The band gap in a semi-conductor is \(0.6 \mathrm{eV}\). The maximum wavelength of electromagnetic radiation which can create a hole-electron pair in this semiconductor is equal to
[Use hc \(=1242\) eV - nm]

150611 What is the maximum wavelength of electromagnetic radiation that create a electron-hole pair in material with band gap 0.7 eV?. Planck's constant \(4.136 \times 10^{-15} \mathrm{eV}\)-Sec, velocity of light \(=3 \times 10^8 \mathrm{~m} / \mathrm{s}\).

150612 In a p-type semiconductor, the concentration of holes is \(2 \times 10^{15} \mathbf{~ c m}^{-3}\). The intrinsic carrier concentration is \(2 \times 10^{10} \mathbf{c m}^{-3}\). The concentration of electrons will be

150588 For a copper block, find the electric field which can give on an average \(1 \mathrm{eV}\) energy to a conduction electron. (The mean free path of conduction electrons in copper is given as \(4 \times\) \(10^{-8} \mathrm{~m}\) )

150604 A semiconductor has equal electron and hole concentration of \(2 \times 10^8 \mathrm{~m}^{-3}\). On doping with a certain impurity, the electron concentration increases to \(4 \times 10^{10} \mathrm{~m}^{-3}\), then the new hole concentration of the semiconductor is

150607 The band gap in a semi-conductor is \(0.6 \mathrm{eV}\). The maximum wavelength of electromagnetic radiation which can create a hole-electron pair in this semiconductor is equal to
[Use hc \(=1242\) eV - nm]

150611 What is the maximum wavelength of electromagnetic radiation that create a electron-hole pair in material with band gap 0.7 eV?. Planck's constant \(4.136 \times 10^{-15} \mathrm{eV}\)-Sec, velocity of light \(=3 \times 10^8 \mathrm{~m} / \mathrm{s}\).

150612 In a p-type semiconductor, the concentration of holes is \(2 \times 10^{15} \mathbf{~ c m}^{-3}\). The intrinsic carrier concentration is \(2 \times 10^{10} \mathbf{c m}^{-3}\). The concentration of electrons will be

150588 For a copper block, find the electric field which can give on an average \(1 \mathrm{eV}\) energy to a conduction electron. (The mean free path of conduction electrons in copper is given as \(4 \times\) \(10^{-8} \mathrm{~m}\) )

150604 A semiconductor has equal electron and hole concentration of \(2 \times 10^8 \mathrm{~m}^{-3}\). On doping with a certain impurity, the electron concentration increases to \(4 \times 10^{10} \mathrm{~m}^{-3}\), then the new hole concentration of the semiconductor is

150607 The band gap in a semi-conductor is \(0.6 \mathrm{eV}\). The maximum wavelength of electromagnetic radiation which can create a hole-electron pair in this semiconductor is equal to
[Use hc \(=1242\) eV - nm]

150611 What is the maximum wavelength of electromagnetic radiation that create a electron-hole pair in material with band gap 0.7 eV?. Planck's constant \(4.136 \times 10^{-15} \mathrm{eV}\)-Sec, velocity of light \(=3 \times 10^8 \mathrm{~m} / \mathrm{s}\).

150612 In a p-type semiconductor, the concentration of holes is \(2 \times 10^{15} \mathbf{~ c m}^{-3}\). The intrinsic carrier concentration is \(2 \times 10^{10} \mathbf{c m}^{-3}\). The concentration of electrons will be

150588 For a copper block, find the electric field which can give on an average \(1 \mathrm{eV}\) energy to a conduction electron. (The mean free path of conduction electrons in copper is given as \(4 \times\) \(10^{-8} \mathrm{~m}\) )

150604 A semiconductor has equal electron and hole concentration of \(2 \times 10^8 \mathrm{~m}^{-3}\). On doping with a certain impurity, the electron concentration increases to \(4 \times 10^{10} \mathrm{~m}^{-3}\), then the new hole concentration of the semiconductor is

150607 The band gap in a semi-conductor is \(0.6 \mathrm{eV}\). The maximum wavelength of electromagnetic radiation which can create a hole-electron pair in this semiconductor is equal to
[Use hc \(=1242\) eV - nm]

150611 What is the maximum wavelength of electromagnetic radiation that create a electron-hole pair in material with band gap 0.7 eV?. Planck's constant \(4.136 \times 10^{-15} \mathrm{eV}\)-Sec, velocity of light \(=3 \times 10^8 \mathrm{~m} / \mathrm{s}\).

150612 In a p-type semiconductor, the concentration of holes is \(2 \times 10^{15} \mathbf{~ c m}^{-3}\). The intrinsic carrier concentration is \(2 \times 10^{10} \mathbf{c m}^{-3}\). The concentration of electrons will be