150497 Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by \(\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{C}},\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{Si}}\) and \(\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{Ge}}\) respectively. Which one of the following relationships is true in their case?

150499 The electron density of intrinsic semiconductor at room temperature is \(10^{16} \mathrm{~m}^{-3}\). When doped with a trivalent impurity, the electron density is decreased to \(10^{14} \mathrm{~m}^{-3}\) at the same temperature. The majority carrier density is

150501 A pure semiconductor has equal electron and hole concentration of \(10^{16} \mathrm{~m}^{-3}\). Doping by indium increases \(\mathrm{n}_{\mathrm{h}}\) to \(5 \times 10^{22} \mathrm{~m}^{-3}\). Then, the value of \(n_e\) in the doped semiconductor is

150503 A silicon specimen is made into a p-type semiconductor by doping, on an average, one indium atom per \(5 \times 10^7\) silicon atoms. If the number density of atoms in the silicon specimen is \(5 \times 10^{28}\) atom \(/ \mathrm{m}^3\), then the number of acceptor atoms in silicon per cubic centimeter will be :

150497 Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by \(\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{C}},\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{Si}}\) and \(\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{Ge}}\) respectively. Which one of the following relationships is true in their case?

150499 The electron density of intrinsic semiconductor at room temperature is \(10^{16} \mathrm{~m}^{-3}\). When doped with a trivalent impurity, the electron density is decreased to \(10^{14} \mathrm{~m}^{-3}\) at the same temperature. The majority carrier density is

150501 A pure semiconductor has equal electron and hole concentration of \(10^{16} \mathrm{~m}^{-3}\). Doping by indium increases \(\mathrm{n}_{\mathrm{h}}\) to \(5 \times 10^{22} \mathrm{~m}^{-3}\). Then, the value of \(n_e\) in the doped semiconductor is

150503 A silicon specimen is made into a p-type semiconductor by doping, on an average, one indium atom per \(5 \times 10^7\) silicon atoms. If the number density of atoms in the silicon specimen is \(5 \times 10^{28}\) atom \(/ \mathrm{m}^3\), then the number of acceptor atoms in silicon per cubic centimeter will be :

150497 Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by \(\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{C}},\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{Si}}\) and \(\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{Ge}}\) respectively. Which one of the following relationships is true in their case?

150499 The electron density of intrinsic semiconductor at room temperature is \(10^{16} \mathrm{~m}^{-3}\). When doped with a trivalent impurity, the electron density is decreased to \(10^{14} \mathrm{~m}^{-3}\) at the same temperature. The majority carrier density is

150501 A pure semiconductor has equal electron and hole concentration of \(10^{16} \mathrm{~m}^{-3}\). Doping by indium increases \(\mathrm{n}_{\mathrm{h}}\) to \(5 \times 10^{22} \mathrm{~m}^{-3}\). Then, the value of \(n_e\) in the doped semiconductor is

150503 A silicon specimen is made into a p-type semiconductor by doping, on an average, one indium atom per \(5 \times 10^7\) silicon atoms. If the number density of atoms in the silicon specimen is \(5 \times 10^{28}\) atom \(/ \mathrm{m}^3\), then the number of acceptor atoms in silicon per cubic centimeter will be :

150497 Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by \(\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{C}},\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{Si}}\) and \(\left(\mathrm{E}_{\mathrm{g}}\right)_{\mathrm{Ge}}\) respectively. Which one of the following relationships is true in their case?

150499 The electron density of intrinsic semiconductor at room temperature is \(10^{16} \mathrm{~m}^{-3}\). When doped with a trivalent impurity, the electron density is decreased to \(10^{14} \mathrm{~m}^{-3}\) at the same temperature. The majority carrier density is

150501 A pure semiconductor has equal electron and hole concentration of \(10^{16} \mathrm{~m}^{-3}\). Doping by indium increases \(\mathrm{n}_{\mathrm{h}}\) to \(5 \times 10^{22} \mathrm{~m}^{-3}\). Then, the value of \(n_e\) in the doped semiconductor is

150503 A silicon specimen is made into a p-type semiconductor by doping, on an average, one indium atom per \(5 \times 10^7\) silicon atoms. If the number density of atoms in the silicon specimen is \(5 \times 10^{28}\) atom \(/ \mathrm{m}^3\), then the number of acceptor atoms in silicon per cubic centimeter will be :