Types of Semi Conductors
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365554 In a \(n\)-type semiconductor, which of the following statement is true?

1 Electrons are majority carriers and trivalent atoms are dopants.
2 Electrons are minority carriers and petavalent atoms are dopants.
3 Holes are minority carriers and pentavalent atoms are dopants.
4 Holes are majority carriers and trivalent atoms are dopants.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365555 In a \(n\) - type semiconductor, the Fermi energy level lies

1 In the forbidden energy gap nearer to the conduction band
2 In the forbidden energy gap nearer to the valence band
3 In the middle of forbidden energy gap
4 Outside the forbidden energy gap
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365556 In a semiconductor, the concentration of electrons is \(8 \times {10^{14}}/c{m^3}\) and that of the holes is \(5 \times {10^{12}}/c{m^3}.\) The semiconductor is

1 \(N\)-type
2 \(P\)-type
3 \(PNP\)-type
4 Intrinsic
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365557 A silicon specimen is made into a \(p\)-type semiconductor by doping on an average one indium atom per \(5 \times 10^{7}\) silicon atoms. If the number density of atoms in the silicon specimen is \(5 \times {10^{28}}{\rm{atom/}}c{m^3}\), then the number of accepter atoms in silicon per cubic centimeter will be:

1 \(2.5 \times {10^{30}}{\rm{atom/}}c{m^3}\)
2 \(2.5 \times {10^{35}}{\rm{atom/}}c{m^3}\)
3 \(1.0 \times {10^{13}}{\rm{atom/}}c{m^3}\)
4 \(1.0 \times {10^{15}}{\rm{atom/}}c{m^3}\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365554 In a \(n\)-type semiconductor, which of the following statement is true?

1 Electrons are majority carriers and trivalent atoms are dopants.
2 Electrons are minority carriers and petavalent atoms are dopants.
3 Holes are minority carriers and pentavalent atoms are dopants.
4 Holes are majority carriers and trivalent atoms are dopants.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365555 In a \(n\) - type semiconductor, the Fermi energy level lies

1 In the forbidden energy gap nearer to the conduction band
2 In the forbidden energy gap nearer to the valence band
3 In the middle of forbidden energy gap
4 Outside the forbidden energy gap
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365556 In a semiconductor, the concentration of electrons is \(8 \times {10^{14}}/c{m^3}\) and that of the holes is \(5 \times {10^{12}}/c{m^3}.\) The semiconductor is

1 \(N\)-type
2 \(P\)-type
3 \(PNP\)-type
4 Intrinsic
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365557 A silicon specimen is made into a \(p\)-type semiconductor by doping on an average one indium atom per \(5 \times 10^{7}\) silicon atoms. If the number density of atoms in the silicon specimen is \(5 \times {10^{28}}{\rm{atom/}}c{m^3}\), then the number of accepter atoms in silicon per cubic centimeter will be:

1 \(2.5 \times {10^{30}}{\rm{atom/}}c{m^3}\)
2 \(2.5 \times {10^{35}}{\rm{atom/}}c{m^3}\)
3 \(1.0 \times {10^{13}}{\rm{atom/}}c{m^3}\)
4 \(1.0 \times {10^{15}}{\rm{atom/}}c{m^3}\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365554 In a \(n\)-type semiconductor, which of the following statement is true?

1 Electrons are majority carriers and trivalent atoms are dopants.
2 Electrons are minority carriers and petavalent atoms are dopants.
3 Holes are minority carriers and pentavalent atoms are dopants.
4 Holes are majority carriers and trivalent atoms are dopants.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365555 In a \(n\) - type semiconductor, the Fermi energy level lies

1 In the forbidden energy gap nearer to the conduction band
2 In the forbidden energy gap nearer to the valence band
3 In the middle of forbidden energy gap
4 Outside the forbidden energy gap
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365556 In a semiconductor, the concentration of electrons is \(8 \times {10^{14}}/c{m^3}\) and that of the holes is \(5 \times {10^{12}}/c{m^3}.\) The semiconductor is

1 \(N\)-type
2 \(P\)-type
3 \(PNP\)-type
4 Intrinsic
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365557 A silicon specimen is made into a \(p\)-type semiconductor by doping on an average one indium atom per \(5 \times 10^{7}\) silicon atoms. If the number density of atoms in the silicon specimen is \(5 \times {10^{28}}{\rm{atom/}}c{m^3}\), then the number of accepter atoms in silicon per cubic centimeter will be:

1 \(2.5 \times {10^{30}}{\rm{atom/}}c{m^3}\)
2 \(2.5 \times {10^{35}}{\rm{atom/}}c{m^3}\)
3 \(1.0 \times {10^{13}}{\rm{atom/}}c{m^3}\)
4 \(1.0 \times {10^{15}}{\rm{atom/}}c{m^3}\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365554 In a \(n\)-type semiconductor, which of the following statement is true?

1 Electrons are majority carriers and trivalent atoms are dopants.
2 Electrons are minority carriers and petavalent atoms are dopants.
3 Holes are minority carriers and pentavalent atoms are dopants.
4 Holes are majority carriers and trivalent atoms are dopants.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365555 In a \(n\) - type semiconductor, the Fermi energy level lies

1 In the forbidden energy gap nearer to the conduction band
2 In the forbidden energy gap nearer to the valence band
3 In the middle of forbidden energy gap
4 Outside the forbidden energy gap
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365556 In a semiconductor, the concentration of electrons is \(8 \times {10^{14}}/c{m^3}\) and that of the holes is \(5 \times {10^{12}}/c{m^3}.\) The semiconductor is

1 \(N\)-type
2 \(P\)-type
3 \(PNP\)-type
4 Intrinsic
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365557 A silicon specimen is made into a \(p\)-type semiconductor by doping on an average one indium atom per \(5 \times 10^{7}\) silicon atoms. If the number density of atoms in the silicon specimen is \(5 \times {10^{28}}{\rm{atom/}}c{m^3}\), then the number of accepter atoms in silicon per cubic centimeter will be:

1 \(2.5 \times {10^{30}}{\rm{atom/}}c{m^3}\)
2 \(2.5 \times {10^{35}}{\rm{atom/}}c{m^3}\)
3 \(1.0 \times {10^{13}}{\rm{atom/}}c{m^3}\)
4 \(1.0 \times {10^{15}}{\rm{atom/}}c{m^3}\)
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