Types of Semi Conductors
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365549 If the ratio of the concentration of electrons to that of holes in a semiconductor is \({\dfrac{7}{5}}\) and the ratio of currents is \({\dfrac{7}{4}}\), then what is the ratio of their drift velocities?

1 \(\frac{2}{3}\)
2 \(\frac{4}{7}\)
3 \(\frac{5}{4}\)
4 \(\frac{1}{5}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365550 Assertion :
When a semiconductor is doped with a donor impurity, the hole concentration decreases and the electron concentration increases.
Reason :
A donor impurity is an atom with valence electrons of five always.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365551 When a small amount of impurity atoms are added to a semi conductor, then generally its resistivity

1 May increase or decrease depending upon the percentage of doping
2 Increase
3 Decrease
4 Does not change
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365552 Which one of the following statement is false?

1 Pure Si doped with trivalent impurities gives a \(p\)- type semiconductor
2 Majority carriers in a \(n\)-type semiconductor are holes
3 Minority carriers in a \(p\)-type semiconductor are electrons
4 The resistance of intrinsic semiconductor decreases with increase of temperature
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365553 A specimen of silicon is to be made \(p\)-type semiconductor, for this one atom of indium, on an average, is doped in \(5 \times 10^{7}\) silicon atoms. If the number density of silicon is \(5 \times {10^{28}}atom{\rm{/}}{{\rm{m}}^3}\), then the number of acceptor atoms per \(c{m^3}\) will be

1 \(2.5 \times 10^{30}\)
2 \(1.0 \times 10^{13}\)
3 \(1.0 \times 10^{15}\)
4 \(2.5 \times 10^{36}\)
AIIMS - 2017
NEET DIGITAL LIBRARY
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365549 If the ratio of the concentration of electrons to that of holes in a semiconductor is \({\dfrac{7}{5}}\) and the ratio of currents is \({\dfrac{7}{4}}\), then what is the ratio of their drift velocities?

1 \(\frac{2}{3}\)
2 \(\frac{4}{7}\)
3 \(\frac{5}{4}\)
4 \(\frac{1}{5}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365550 Assertion :
When a semiconductor is doped with a donor impurity, the hole concentration decreases and the electron concentration increases.
Reason :
A donor impurity is an atom with valence electrons of five always.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365551 When a small amount of impurity atoms are added to a semi conductor, then generally its resistivity

1 May increase or decrease depending upon the percentage of doping
2 Increase
3 Decrease
4 Does not change
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365552 Which one of the following statement is false?

1 Pure Si doped with trivalent impurities gives a \(p\)- type semiconductor
2 Majority carriers in a \(n\)-type semiconductor are holes
3 Minority carriers in a \(p\)-type semiconductor are electrons
4 The resistance of intrinsic semiconductor decreases with increase of temperature
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365553 A specimen of silicon is to be made \(p\)-type semiconductor, for this one atom of indium, on an average, is doped in \(5 \times 10^{7}\) silicon atoms. If the number density of silicon is \(5 \times {10^{28}}atom{\rm{/}}{{\rm{m}}^3}\), then the number of acceptor atoms per \(c{m^3}\) will be

1 \(2.5 \times 10^{30}\)
2 \(1.0 \times 10^{13}\)
3 \(1.0 \times 10^{15}\)
4 \(2.5 \times 10^{36}\)
AIIMS - 2017
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365549 If the ratio of the concentration of electrons to that of holes in a semiconductor is \({\dfrac{7}{5}}\) and the ratio of currents is \({\dfrac{7}{4}}\), then what is the ratio of their drift velocities?

1 \(\frac{2}{3}\)
2 \(\frac{4}{7}\)
3 \(\frac{5}{4}\)
4 \(\frac{1}{5}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365550 Assertion :
When a semiconductor is doped with a donor impurity, the hole concentration decreases and the electron concentration increases.
Reason :
A donor impurity is an atom with valence electrons of five always.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365551 When a small amount of impurity atoms are added to a semi conductor, then generally its resistivity

1 May increase or decrease depending upon the percentage of doping
2 Increase
3 Decrease
4 Does not change
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365552 Which one of the following statement is false?

1 Pure Si doped with trivalent impurities gives a \(p\)- type semiconductor
2 Majority carriers in a \(n\)-type semiconductor are holes
3 Minority carriers in a \(p\)-type semiconductor are electrons
4 The resistance of intrinsic semiconductor decreases with increase of temperature
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365553 A specimen of silicon is to be made \(p\)-type semiconductor, for this one atom of indium, on an average, is doped in \(5 \times 10^{7}\) silicon atoms. If the number density of silicon is \(5 \times {10^{28}}atom{\rm{/}}{{\rm{m}}^3}\), then the number of acceptor atoms per \(c{m^3}\) will be

1 \(2.5 \times 10^{30}\)
2 \(1.0 \times 10^{13}\)
3 \(1.0 \times 10^{15}\)
4 \(2.5 \times 10^{36}\)
AIIMS - 2017
For More Updates join with Us
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365549 If the ratio of the concentration of electrons to that of holes in a semiconductor is \({\dfrac{7}{5}}\) and the ratio of currents is \({\dfrac{7}{4}}\), then what is the ratio of their drift velocities?

1 \(\frac{2}{3}\)
2 \(\frac{4}{7}\)
3 \(\frac{5}{4}\)
4 \(\frac{1}{5}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365550 Assertion :
When a semiconductor is doped with a donor impurity, the hole concentration decreases and the electron concentration increases.
Reason :
A donor impurity is an atom with valence electrons of five always.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365551 When a small amount of impurity atoms are added to a semi conductor, then generally its resistivity

1 May increase or decrease depending upon the percentage of doping
2 Increase
3 Decrease
4 Does not change
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365552 Which one of the following statement is false?

1 Pure Si doped with trivalent impurities gives a \(p\)- type semiconductor
2 Majority carriers in a \(n\)-type semiconductor are holes
3 Minority carriers in a \(p\)-type semiconductor are electrons
4 The resistance of intrinsic semiconductor decreases with increase of temperature
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365553 A specimen of silicon is to be made \(p\)-type semiconductor, for this one atom of indium, on an average, is doped in \(5 \times 10^{7}\) silicon atoms. If the number density of silicon is \(5 \times {10^{28}}atom{\rm{/}}{{\rm{m}}^3}\), then the number of acceptor atoms per \(c{m^3}\) will be

1 \(2.5 \times 10^{30}\)
2 \(1.0 \times 10^{13}\)
3 \(1.0 \times 10^{15}\)
4 \(2.5 \times 10^{36}\)
AIIMS - 2017
NEET DIGITAL LIBRARY
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365549 If the ratio of the concentration of electrons to that of holes in a semiconductor is \({\dfrac{7}{5}}\) and the ratio of currents is \({\dfrac{7}{4}}\), then what is the ratio of their drift velocities?

1 \(\frac{2}{3}\)
2 \(\frac{4}{7}\)
3 \(\frac{5}{4}\)
4 \(\frac{1}{5}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365550 Assertion :
When a semiconductor is doped with a donor impurity, the hole concentration decreases and the electron concentration increases.
Reason :
A donor impurity is an atom with valence electrons of five always.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365551 When a small amount of impurity atoms are added to a semi conductor, then generally its resistivity

1 May increase or decrease depending upon the percentage of doping
2 Increase
3 Decrease
4 Does not change
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365552 Which one of the following statement is false?

1 Pure Si doped with trivalent impurities gives a \(p\)- type semiconductor
2 Majority carriers in a \(n\)-type semiconductor are holes
3 Minority carriers in a \(p\)-type semiconductor are electrons
4 The resistance of intrinsic semiconductor decreases with increase of temperature
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365553 A specimen of silicon is to be made \(p\)-type semiconductor, for this one atom of indium, on an average, is doped in \(5 \times 10^{7}\) silicon atoms. If the number density of silicon is \(5 \times {10^{28}}atom{\rm{/}}{{\rm{m}}^3}\), then the number of acceptor atoms per \(c{m^3}\) will be

1 \(2.5 \times 10^{30}\)
2 \(1.0 \times 10^{13}\)
3 \(1.0 \times 10^{15}\)
4 \(2.5 \times 10^{36}\)
AIIMS - 2017