Special Purpose Diodes
« Previous Topic: Semiconductor Diode Next Topic: Transistors »
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365420 A light emitting diode ( \(L E D)\) is fabricated using Ga as semiconducting material whose band gap is \(1.42\,eV.\) The wavelength of light emitted from the \(LED\) is

1 \(1234\,nm\)
2 \(1400\,nm\)
3 \(875\,nm\)
4 \(650\,nm\)
JEE - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365421 The given graph represent \(V\) - \(I\) characteristics for a semiconductor device.
Which of the following statement is correct?
supporting img

1 It is \(V\) -\(I\) characteristics for solar cell where point \(A\) represents open circuit voltage and point \(B\) short circuit current.
2 It is for a solar cell and points \(A\) and \(B\) represent open circuit voltage and current respectively.
3 It is for a photodiode and points \(A\) and \(B\) represent open circuit voltage and current, respectively.
4 It is for an \(LED\) and points \(A\) and \(B\) represent open circuit voltage and short circuit current, respectively.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365422 Assertion :
A \(pn\) junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason :
In a reverse bias condition the current is small but it is more sensitive to change in incident light intensity.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365423 The energy gap of silicon is 1.14 \(eV\). The maximum wavelength at which silicon will begin absorbing energy is

1 \(1088.8\,\mathop A\limits^ \circ \)
2 \(10888\,\mathop A\limits^ \circ \)
3 \(10.888\,\mathop A\limits^ \circ \)
4 \(108.88\,\mathop A\limits^ \circ \)
For More Updates join with Us
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365420 A light emitting diode ( \(L E D)\) is fabricated using Ga as semiconducting material whose band gap is \(1.42\,eV.\) The wavelength of light emitted from the \(LED\) is

1 \(1234\,nm\)
2 \(1400\,nm\)
3 \(875\,nm\)
4 \(650\,nm\)
JEE - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365421 The given graph represent \(V\) - \(I\) characteristics for a semiconductor device.
Which of the following statement is correct?
supporting img

1 It is \(V\) -\(I\) characteristics for solar cell where point \(A\) represents open circuit voltage and point \(B\) short circuit current.
2 It is for a solar cell and points \(A\) and \(B\) represent open circuit voltage and current respectively.
3 It is for a photodiode and points \(A\) and \(B\) represent open circuit voltage and current, respectively.
4 It is for an \(LED\) and points \(A\) and \(B\) represent open circuit voltage and short circuit current, respectively.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365422 Assertion :
A \(pn\) junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason :
In a reverse bias condition the current is small but it is more sensitive to change in incident light intensity.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365423 The energy gap of silicon is 1.14 \(eV\). The maximum wavelength at which silicon will begin absorbing energy is

1 \(1088.8\,\mathop A\limits^ \circ \)
2 \(10888\,\mathop A\limits^ \circ \)
3 \(10.888\,\mathop A\limits^ \circ \)
4 \(108.88\,\mathop A\limits^ \circ \)
NEET DIGITAL LIBRARY
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365420 A light emitting diode ( \(L E D)\) is fabricated using Ga as semiconducting material whose band gap is \(1.42\,eV.\) The wavelength of light emitted from the \(LED\) is

1 \(1234\,nm\)
2 \(1400\,nm\)
3 \(875\,nm\)
4 \(650\,nm\)
JEE - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365421 The given graph represent \(V\) - \(I\) characteristics for a semiconductor device.
Which of the following statement is correct?
supporting img

1 It is \(V\) -\(I\) characteristics for solar cell where point \(A\) represents open circuit voltage and point \(B\) short circuit current.
2 It is for a solar cell and points \(A\) and \(B\) represent open circuit voltage and current respectively.
3 It is for a photodiode and points \(A\) and \(B\) represent open circuit voltage and current, respectively.
4 It is for an \(LED\) and points \(A\) and \(B\) represent open circuit voltage and short circuit current, respectively.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365422 Assertion :
A \(pn\) junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason :
In a reverse bias condition the current is small but it is more sensitive to change in incident light intensity.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365423 The energy gap of silicon is 1.14 \(eV\). The maximum wavelength at which silicon will begin absorbing energy is

1 \(1088.8\,\mathop A\limits^ \circ \)
2 \(10888\,\mathop A\limits^ \circ \)
3 \(10.888\,\mathop A\limits^ \circ \)
4 \(108.88\,\mathop A\limits^ \circ \)
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365420 A light emitting diode ( \(L E D)\) is fabricated using Ga as semiconducting material whose band gap is \(1.42\,eV.\) The wavelength of light emitted from the \(LED\) is

1 \(1234\,nm\)
2 \(1400\,nm\)
3 \(875\,nm\)
4 \(650\,nm\)
JEE - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365421 The given graph represent \(V\) - \(I\) characteristics for a semiconductor device.
Which of the following statement is correct?
supporting img

1 It is \(V\) -\(I\) characteristics for solar cell where point \(A\) represents open circuit voltage and point \(B\) short circuit current.
2 It is for a solar cell and points \(A\) and \(B\) represent open circuit voltage and current respectively.
3 It is for a photodiode and points \(A\) and \(B\) represent open circuit voltage and current, respectively.
4 It is for an \(LED\) and points \(A\) and \(B\) represent open circuit voltage and short circuit current, respectively.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365422 Assertion :
A \(pn\) junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason :
In a reverse bias condition the current is small but it is more sensitive to change in incident light intensity.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365423 The energy gap of silicon is 1.14 \(eV\). The maximum wavelength at which silicon will begin absorbing energy is

1 \(1088.8\,\mathop A\limits^ \circ \)
2 \(10888\,\mathop A\limits^ \circ \)
3 \(10.888\,\mathop A\limits^ \circ \)
4 \(108.88\,\mathop A\limits^ \circ \)
For More Updates join with Us