Special Purpose Diodes
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365415 The energy gap of an \(L E D\) is \(2.4\,eV\). When the \(L E D\) is switched ' \(O N\) ', the momentum of the emitted photons is

1 \(1.28 \times {10^{ - 11}}\;kg \cdot m \cdot {s^{ - 1}}\)
2 \(0.64 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
3 \(1.28 \times {10^{ - 27}}\;kg.m \cdot {s^{ - 1}}\)
4 \(2.56 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365416 For detecting intensity of light, we use

1 photodiode in forward bias
2 photodiode in reverse bias
3 LED in forward bias
4 LED in reverse bias
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365417 Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365418 Assertion :
A photocell is called an electric eye.
Reason :
When light is incident on some semiconductor its electrical resistance is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365419 Assertion :
Light Emitting Diode ( \(L E D)\) emits spontaneous radiation.
Reason :
\(L E D\) are forward biased \(pn\) junctions.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365415 The energy gap of an \(L E D\) is \(2.4\,eV\). When the \(L E D\) is switched ' \(O N\) ', the momentum of the emitted photons is

1 \(1.28 \times {10^{ - 11}}\;kg \cdot m \cdot {s^{ - 1}}\)
2 \(0.64 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
3 \(1.28 \times {10^{ - 27}}\;kg.m \cdot {s^{ - 1}}\)
4 \(2.56 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365416 For detecting intensity of light, we use

1 photodiode in forward bias
2 photodiode in reverse bias
3 LED in forward bias
4 LED in reverse bias
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365417 Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365418 Assertion :
A photocell is called an electric eye.
Reason :
When light is incident on some semiconductor its electrical resistance is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365419 Assertion :
Light Emitting Diode ( \(L E D)\) emits spontaneous radiation.
Reason :
\(L E D\) are forward biased \(pn\) junctions.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365415 The energy gap of an \(L E D\) is \(2.4\,eV\). When the \(L E D\) is switched ' \(O N\) ', the momentum of the emitted photons is

1 \(1.28 \times {10^{ - 11}}\;kg \cdot m \cdot {s^{ - 1}}\)
2 \(0.64 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
3 \(1.28 \times {10^{ - 27}}\;kg.m \cdot {s^{ - 1}}\)
4 \(2.56 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365416 For detecting intensity of light, we use

1 photodiode in forward bias
2 photodiode in reverse bias
3 LED in forward bias
4 LED in reverse bias
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365417 Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365418 Assertion :
A photocell is called an electric eye.
Reason :
When light is incident on some semiconductor its electrical resistance is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365419 Assertion :
Light Emitting Diode ( \(L E D)\) emits spontaneous radiation.
Reason :
\(L E D\) are forward biased \(pn\) junctions.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365415 The energy gap of an \(L E D\) is \(2.4\,eV\). When the \(L E D\) is switched ' \(O N\) ', the momentum of the emitted photons is

1 \(1.28 \times {10^{ - 11}}\;kg \cdot m \cdot {s^{ - 1}}\)
2 \(0.64 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
3 \(1.28 \times {10^{ - 27}}\;kg.m \cdot {s^{ - 1}}\)
4 \(2.56 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365416 For detecting intensity of light, we use

1 photodiode in forward bias
2 photodiode in reverse bias
3 LED in forward bias
4 LED in reverse bias
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365417 Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365418 Assertion :
A photocell is called an electric eye.
Reason :
When light is incident on some semiconductor its electrical resistance is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365419 Assertion :
Light Emitting Diode ( \(L E D)\) emits spontaneous radiation.
Reason :
\(L E D\) are forward biased \(pn\) junctions.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365415 The energy gap of an \(L E D\) is \(2.4\,eV\). When the \(L E D\) is switched ' \(O N\) ', the momentum of the emitted photons is

1 \(1.28 \times {10^{ - 11}}\;kg \cdot m \cdot {s^{ - 1}}\)
2 \(0.64 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
3 \(1.28 \times {10^{ - 27}}\;kg.m \cdot {s^{ - 1}}\)
4 \(2.56 \times {10^{ - 27}}\;kg \cdot m \cdot {s^{ - 1}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365416 For detecting intensity of light, we use

1 photodiode in forward bias
2 photodiode in reverse bias
3 LED in forward bias
4 LED in reverse bias
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365417 Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365418 Assertion :
A photocell is called an electric eye.
Reason :
When light is incident on some semiconductor its electrical resistance is reduced.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365419 Assertion :
Light Emitting Diode ( \(L E D)\) emits spontaneous radiation.
Reason :
\(L E D\) are forward biased \(pn\) junctions.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.