365417
Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)
365417
Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)
365417
Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)
365417
Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)
365417
Assertion :
A \(pn\) photodiode is made from a semiconductor for which \({E_g} = 2.8\,eV\). This photo diode will not detect the wavelength of \(600\;nm\).
Reason :
A \(P N\) photodiode detects wavelength \(\lambda\) if \(\left(\dfrac{h c}{\lambda}\right)\) is less than \(E_{g}\)