Semiconductor Diode
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365360 With forward biased mode, the \(p\) - \(n\) junction diode

1 Is one in which width of depletion layer increases
2 Is one in which potential barrier increases
3 Acts as closed switch
4 Acts as open switch
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365361 In an unbiased \(p\) - \(n\) junction

1 potential at \(p\) is equal to that at \(n\)
2 potential at \(p\) is +\(ve\) and that at \(n\) is -\(ve\)
3 potential at \(p\) is more than that at \(n\)
4 potential at \(p\) is less than that at \(n\)
KCET - 2008
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365362 The barrier potential of a \(p\)-\(n\) junction depends on
(i) Type of semiconductor material
(ii) Amount of doping
(iii) Temperature
Which one of the following is correct?

1 (i) and (ii) only
2 (ii) only
3 (ii) and (iii) only
4 (i), (ii) and (iii)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365363 The current through any \(p-n\) junction is due to
A. Drift of charge carriers
B. Diffusion of charge carriers
C. Different concentrations of same type of charge carriers in different regions
D. Same concentrations of same type of charge carriers in different regions

1 \(A\), \(B\) and \(C\)
2 \(A\) and \(B\) only
3 only \(D\)
4 \(A\), \(B\), \(C\) and \(D\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365360 With forward biased mode, the \(p\) - \(n\) junction diode

1 Is one in which width of depletion layer increases
2 Is one in which potential barrier increases
3 Acts as closed switch
4 Acts as open switch
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365361 In an unbiased \(p\) - \(n\) junction

1 potential at \(p\) is equal to that at \(n\)
2 potential at \(p\) is +\(ve\) and that at \(n\) is -\(ve\)
3 potential at \(p\) is more than that at \(n\)
4 potential at \(p\) is less than that at \(n\)
KCET - 2008
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365362 The barrier potential of a \(p\)-\(n\) junction depends on
(i) Type of semiconductor material
(ii) Amount of doping
(iii) Temperature
Which one of the following is correct?

1 (i) and (ii) only
2 (ii) only
3 (ii) and (iii) only
4 (i), (ii) and (iii)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365363 The current through any \(p-n\) junction is due to
A. Drift of charge carriers
B. Diffusion of charge carriers
C. Different concentrations of same type of charge carriers in different regions
D. Same concentrations of same type of charge carriers in different regions

1 \(A\), \(B\) and \(C\)
2 \(A\) and \(B\) only
3 only \(D\)
4 \(A\), \(B\), \(C\) and \(D\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365360 With forward biased mode, the \(p\) - \(n\) junction diode

1 Is one in which width of depletion layer increases
2 Is one in which potential barrier increases
3 Acts as closed switch
4 Acts as open switch
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365361 In an unbiased \(p\) - \(n\) junction

1 potential at \(p\) is equal to that at \(n\)
2 potential at \(p\) is +\(ve\) and that at \(n\) is -\(ve\)
3 potential at \(p\) is more than that at \(n\)
4 potential at \(p\) is less than that at \(n\)
KCET - 2008
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365362 The barrier potential of a \(p\)-\(n\) junction depends on
(i) Type of semiconductor material
(ii) Amount of doping
(iii) Temperature
Which one of the following is correct?

1 (i) and (ii) only
2 (ii) only
3 (ii) and (iii) only
4 (i), (ii) and (iii)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365363 The current through any \(p-n\) junction is due to
A. Drift of charge carriers
B. Diffusion of charge carriers
C. Different concentrations of same type of charge carriers in different regions
D. Same concentrations of same type of charge carriers in different regions

1 \(A\), \(B\) and \(C\)
2 \(A\) and \(B\) only
3 only \(D\)
4 \(A\), \(B\), \(C\) and \(D\)
For More Updates join with Us
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365360 With forward biased mode, the \(p\) - \(n\) junction diode

1 Is one in which width of depletion layer increases
2 Is one in which potential barrier increases
3 Acts as closed switch
4 Acts as open switch
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365361 In an unbiased \(p\) - \(n\) junction

1 potential at \(p\) is equal to that at \(n\)
2 potential at \(p\) is +\(ve\) and that at \(n\) is -\(ve\)
3 potential at \(p\) is more than that at \(n\)
4 potential at \(p\) is less than that at \(n\)
KCET - 2008
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365362 The barrier potential of a \(p\)-\(n\) junction depends on
(i) Type of semiconductor material
(ii) Amount of doping
(iii) Temperature
Which one of the following is correct?

1 (i) and (ii) only
2 (ii) only
3 (ii) and (iii) only
4 (i), (ii) and (iii)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365363 The current through any \(p-n\) junction is due to
A. Drift of charge carriers
B. Diffusion of charge carriers
C. Different concentrations of same type of charge carriers in different regions
D. Same concentrations of same type of charge carriers in different regions

1 \(A\), \(B\) and \(C\)
2 \(A\) and \(B\) only
3 only \(D\)
4 \(A\), \(B\), \(C\) and \(D\)