Semiconductor Diode
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the \(pn\) junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a \(pn\) junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a \(p\)-\(n\) junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R
2 A - Q, B - P, C - R
3 A - Q, B - R, C - P
4 A - P, B - R, C - Q
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator
2 A conductor
3 A semiconductor
4 Capacitor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in \(mA\) is
supporting img

1 \(10\,mA\)
2 \(20\,mA\)
3 \(18\,mA\)
4 \(30\,mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of \(0.5\;V\) across the diode which is independent of current. Also a current greater then \(10\;mA\) produces large joule loss and damages diode. If diode is to be operated at \(5\;mA\), the series resistance to be put is
supporting img

1 \(3\,k\Omega \)
2 \(300\,k\Omega \)
3 \(300\,\Omega \)
4 \(200\,\Omega \)
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the \(pn\) junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a \(pn\) junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a \(p\)-\(n\) junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R
2 A - Q, B - P, C - R
3 A - Q, B - R, C - P
4 A - P, B - R, C - Q
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator
2 A conductor
3 A semiconductor
4 Capacitor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in \(mA\) is
supporting img

1 \(10\,mA\)
2 \(20\,mA\)
3 \(18\,mA\)
4 \(30\,mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of \(0.5\;V\) across the diode which is independent of current. Also a current greater then \(10\;mA\) produces large joule loss and damages diode. If diode is to be operated at \(5\;mA\), the series resistance to be put is
supporting img

1 \(3\,k\Omega \)
2 \(300\,k\Omega \)
3 \(300\,\Omega \)
4 \(200\,\Omega \)
For More Updates join with Us
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the \(pn\) junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a \(pn\) junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a \(p\)-\(n\) junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R
2 A - Q, B - P, C - R
3 A - Q, B - R, C - P
4 A - P, B - R, C - Q
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator
2 A conductor
3 A semiconductor
4 Capacitor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in \(mA\) is
supporting img

1 \(10\,mA\)
2 \(20\,mA\)
3 \(18\,mA\)
4 \(30\,mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of \(0.5\;V\) across the diode which is independent of current. Also a current greater then \(10\;mA\) produces large joule loss and damages diode. If diode is to be operated at \(5\;mA\), the series resistance to be put is
supporting img

1 \(3\,k\Omega \)
2 \(300\,k\Omega \)
3 \(300\,\Omega \)
4 \(200\,\Omega \)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the \(pn\) junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a \(pn\) junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a \(p\)-\(n\) junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R
2 A - Q, B - P, C - R
3 A - Q, B - R, C - P
4 A - P, B - R, C - Q
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator
2 A conductor
3 A semiconductor
4 Capacitor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in \(mA\) is
supporting img

1 \(10\,mA\)
2 \(20\,mA\)
3 \(18\,mA\)
4 \(30\,mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of \(0.5\;V\) across the diode which is independent of current. Also a current greater then \(10\;mA\) produces large joule loss and damages diode. If diode is to be operated at \(5\;mA\), the series resistance to be put is
supporting img

1 \(3\,k\Omega \)
2 \(300\,k\Omega \)
3 \(300\,\Omega \)
4 \(200\,\Omega \)
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the \(pn\) junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a \(pn\) junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a \(p\)-\(n\) junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R
2 A - Q, B - P, C - R
3 A - Q, B - R, C - P
4 A - P, B - R, C - Q
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator
2 A conductor
3 A semiconductor
4 Capacitor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in \(mA\) is
supporting img

1 \(10\,mA\)
2 \(20\,mA\)
3 \(18\,mA\)
4 \(30\,mA\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of \(0.5\;V\) across the diode which is independent of current. Also a current greater then \(10\;mA\) produces large joule loss and damages diode. If diode is to be operated at \(5\;mA\), the series resistance to be put is
supporting img

1 \(3\,k\Omega \)
2 \(300\,k\Omega \)
3 \(300\,\Omega \)
4 \(200\,\Omega \)