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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the $p n$ junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a $p n$ junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As there are no free charge carriers, the potential barrier of a $p n$ junction cannot be directly measured by connecting a sensitive voltmeter across its terminals. Moreover, without the application of a forward bias, the $p n$ junction effectively presents infinite resistance. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a $p$ - $n$ junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R

2 A - Q, B - P, C - R

3 A - Q, B - R, C - P

4 A - P, B - R, C - Q

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator

2 A conductor

3 A semiconductor

4 Capacitor

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in $m A$ is
supporting img

1

10 m A

2

20 m A

3

18 m A

4

30 m A

Explanation:

$I = \frac{3 - 1}{100} = 20 m A$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of $0.5 V$ across the diode which is independent of current. Also a current greater then $10 m A$ produces large joule loss and damages diode. If diode is to be operated at $5 m A$ , the series resistance to be put is
supporting img

1

3 k Ω

2

300 k Ω

3

300 Ω

4

200 Ω

Explanation:

When $P - N$ junction is operated at $5 m A$ .
$\begin{aligned} (2 - 0.5) = 5 \times 10^{- 3} \times R \\ R = 300 Ω \end{aligned}$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the $p n$ junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a $p n$ junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As there are no free charge carriers, the potential barrier of a $p n$ junction cannot be directly measured by connecting a sensitive voltmeter across its terminals. Moreover, without the application of a forward bias, the $p n$ junction effectively presents infinite resistance. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a $p$ - $n$ junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R

2 A - Q, B - P, C - R

3 A - Q, B - R, C - P

4 A - P, B - R, C - Q

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator

2 A conductor

3 A semiconductor

4 Capacitor

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in $m A$ is
supporting img

1

10 m A

2

20 m A

3

18 m A

4

30 m A

Explanation:

$I = \frac{3 - 1}{100} = 20 m A$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of $0.5 V$ across the diode which is independent of current. Also a current greater then $10 m A$ produces large joule loss and damages diode. If diode is to be operated at $5 m A$ , the series resistance to be put is
supporting img

1

3 k Ω

2

300 k Ω

3

300 Ω

4

200 Ω

Explanation:

When $P - N$ junction is operated at $5 m A$ .
$\begin{aligned} (2 - 0.5) = 5 \times 10^{- 3} \times R \\ R = 300 Ω \end{aligned}$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the $p n$ junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a $p n$ junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As there are no free charge carriers, the potential barrier of a $p n$ junction cannot be directly measured by connecting a sensitive voltmeter across its terminals. Moreover, without the application of a forward bias, the $p n$ junction effectively presents infinite resistance. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a $p$ - $n$ junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R

2 A - Q, B - P, C - R

3 A - Q, B - R, C - P

4 A - P, B - R, C - Q

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator

2 A conductor

3 A semiconductor

4 Capacitor

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in $m A$ is
supporting img

1

10 m A

2

20 m A

3

18 m A

4

30 m A

Explanation:

$I = \frac{3 - 1}{100} = 20 m A$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of $0.5 V$ across the diode which is independent of current. Also a current greater then $10 m A$ produces large joule loss and damages diode. If diode is to be operated at $5 m A$ , the series resistance to be put is
supporting img

1

3 k Ω

2

300 k Ω

3

300 Ω

4

200 Ω

Explanation:

When $P - N$ junction is operated at $5 m A$ .
$\begin{aligned} (2 - 0.5) = 5 \times 10^{- 3} \times R \\ R = 300 Ω \end{aligned}$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the $p n$ junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a $p n$ junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As there are no free charge carriers, the potential barrier of a $p n$ junction cannot be directly measured by connecting a sensitive voltmeter across its terminals. Moreover, without the application of a forward bias, the $p n$ junction effectively presents infinite resistance. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a $p$ - $n$ junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R

2 A - Q, B - P, C - R

3 A - Q, B - R, C - P

4 A - P, B - R, C - Q

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator

2 A conductor

3 A semiconductor

4 Capacitor

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in $m A$ is
supporting img

1

10 m A

2

20 m A

3

18 m A

4

30 m A

Explanation:

$I = \frac{3 - 1}{100} = 20 m A$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of $0.5 V$ across the diode which is independent of current. Also a current greater then $10 m A$ produces large joule loss and damages diode. If diode is to be operated at $5 m A$ , the series resistance to be put is
supporting img

1

3 k Ω

2

300 k Ω

3

300 Ω

4

200 Ω

Explanation:

When $P - N$ junction is operated at $5 m A$ .
$\begin{aligned} (2 - 0.5) = 5 \times 10^{- 3} \times R \\ R = 300 Ω \end{aligned}$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365324 Assertion :
The current through the $p n$ junction is not same in forward and reversed bias.
Reason :
We can measure the potential barrier of a $p n$ junction by putting a sensitive voltmeter across its terminal.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

As there are no free charge carriers, the potential barrier of a $p n$ junction cannot be directly measured by connecting a sensitive voltmeter across its terminals. Moreover, without the application of a forward bias, the $p n$ junction effectively presents infinite resistance. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365325 Following shows a plot of potential barrier across a $p$ - $n$ junction diode (battery, in forward biased)
Then, match the following columns.
Column I
Column II
A
Without battery
P
1
B
Low potential battery
Q
2
C
High potential battery
R
3
supporting img

1 A - P, B - Q, C - R

2 A - Q, B - P, C - R

3 A - Q, B - R, C - P

4 A - P, B - R, C - Q

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365326 In forward bias the depletion layer behaves like

1 An insulator

2 A conductor

3 A semiconductor

4 Capacitor

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365327 Assuming that the junction diode is ideal, the current through the diode in $m A$ is
supporting img

1

10 m A

2

20 m A

3

18 m A

4

30 m A

Explanation:

$I = \frac{3 - 1}{100} = 20 m A$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365328 A two Volts battery forward biases a diode however there is a drop of $0.5 V$ across the diode which is independent of current. Also a current greater then $10 m A$ produces large joule loss and damages diode. If diode is to be operated at $5 m A$ , the series resistance to be put is
supporting img

1

3 k Ω

2

300 k Ω

3

300 Ω

4

200 Ω

Explanation:

When $P - N$ junction is operated at $5 m A$ .
$\begin{aligned} (2 - 0.5) = 5 \times 10^{- 3} \times R \\ R = 300 Ω \end{aligned}$