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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365198 Band gap in insulator is of the order

1

6 e V

2

0.60 e V

3

- 6 e V

4

0 e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365199 There is no hole current in conductors because they have

1 High conductivity

2 High electron density

3 No valence band

4 Overlapping of valence and conduction bands

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365200 Forbidden gap in a pure conductor is

1

0 e V

2

0.7 e V

3

1.1 e V

4

6 e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365201 A $p n$ photodiode is fabricated from a semiconductor with a band gap of $2.5 e V$ . The signal wavelength is:

1

6000

A^{\circ}

2

6000 n m

3

4000 n m

4

5000

A^{\circ}

Explanation:

$E_{g} = \frac{h c}{λ} \Rightarrow λ = \frac{6.6 \times 10^{- 34} \times 3 \times 10^{8}}{2.5 \times 1.6 \times 10^{- 19}}$
$\Rightarrow λ = 4.95 \times 10^{- 7} m \approx 5000 \overset{^{\circ}}{A} .$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365198 Band gap in insulator is of the order

1

6 e V

2

0.60 e V

3

- 6 e V

4

0 e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365199 There is no hole current in conductors because they have

1 High conductivity

2 High electron density

3 No valence band

4 Overlapping of valence and conduction bands

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365200 Forbidden gap in a pure conductor is

1

0 e V

2

0.7 e V

3

1.1 e V

4

6 e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365201 A $p n$ photodiode is fabricated from a semiconductor with a band gap of $2.5 e V$ . The signal wavelength is:

1

6000

A^{\circ}

2

6000 n m

3

4000 n m

4

5000

A^{\circ}

Explanation:

$E_{g} = \frac{h c}{λ} \Rightarrow λ = \frac{6.6 \times 10^{- 34} \times 3 \times 10^{8}}{2.5 \times 1.6 \times 10^{- 19}}$
$\Rightarrow λ = 4.95 \times 10^{- 7} m \approx 5000 \overset{^{\circ}}{A} .$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365198 Band gap in insulator is of the order

1

6 e V

2

0.60 e V

3

- 6 e V

4

0 e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365199 There is no hole current in conductors because they have

1 High conductivity

2 High electron density

3 No valence band

4 Overlapping of valence and conduction bands

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365200 Forbidden gap in a pure conductor is

1

0 e V

2

0.7 e V

3

1.1 e V

4

6 e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365201 A $p n$ photodiode is fabricated from a semiconductor with a band gap of $2.5 e V$ . The signal wavelength is:

1

6000

A^{\circ}

2

6000 n m

3

4000 n m

4

5000

A^{\circ}

Explanation:

$E_{g} = \frac{h c}{λ} \Rightarrow λ = \frac{6.6 \times 10^{- 34} \times 3 \times 10^{8}}{2.5 \times 1.6 \times 10^{- 19}}$
$\Rightarrow λ = 4.95 \times 10^{- 7} m \approx 5000 \overset{^{\circ}}{A} .$

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365198 Band gap in insulator is of the order

1

6 e V

2

0.60 e V

3

- 6 e V

4

0 e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365199 There is no hole current in conductors because they have

1 High conductivity

2 High electron density

3 No valence band

4 Overlapping of valence and conduction bands

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365200 Forbidden gap in a pure conductor is

1

0 e V

2

0.7 e V

3

1.1 e V

4

6 e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365201 A $p n$ photodiode is fabricated from a semiconductor with a band gap of $2.5 e V$ . The signal wavelength is:

1

6000

A^{\circ}

2

6000 n m

3

4000 n m

4

5000

A^{\circ}

Explanation:

$E_{g} = \frac{h c}{λ} \Rightarrow λ = \frac{6.6 \times 10^{- 34} \times 3 \times 10^{8}}{2.5 \times 1.6 \times 10^{- 19}}$
$\Rightarrow λ = 4.95 \times 10^{- 7} m \approx 5000 \overset{^{\circ}}{A} .$

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