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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365193 In semiconductors the forbidden energy gap between Valence band and Conduction band is of the order of

1

1 e V

2

5 e V

3

1 k e V

4

1 M e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365194 The forbidden energy band gap in conductors, semiconductors and insulators are $E G_{1}, E G_{2},$ and $E G_{3}$ respectively. The relation among them is

1

E G_{1} < E G_{2} < E G_{3}

2

E G_{1} = E G_{2} = E G_{3}

3

E G_{1} < E G_{2} > E G_{3}

4

E G_{1} > E G_{2} > E G_{3}

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365195 The energy gap in case of which of the following is less than 3 $e V$ ?

1 Aluminium

2 Iron

3 Germanium

4 Copper

Explanation:

Since germanium is a semiconductor, its energy gap is less than 3 $e V$ .

KCET - 2018

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365196 Assertion :
Silicon is preferred to germanium for making semiconductor devices.
Reason :
The energy gap for germanium is more than the energy gap of silicon.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

The energy gap $(E_{g})$ for germanium is smaller at $0.72 e V$ , while silicon has a larger energy gap of $1.1 e V$ . This distinction makes silicon the preferred choice over germanium for manufacturing semiconductor devices. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365193 In semiconductors the forbidden energy gap between Valence band and Conduction band is of the order of

1

1 e V

2

5 e V

3

1 k e V

4

1 M e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365194 The forbidden energy band gap in conductors, semiconductors and insulators are $E G_{1}, E G_{2},$ and $E G_{3}$ respectively. The relation among them is

1

E G_{1} < E G_{2} < E G_{3}

2

E G_{1} = E G_{2} = E G_{3}

3

E G_{1} < E G_{2} > E G_{3}

4

E G_{1} > E G_{2} > E G_{3}

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365195 The energy gap in case of which of the following is less than 3 $e V$ ?

1 Aluminium

2 Iron

3 Germanium

4 Copper

Explanation:

Since germanium is a semiconductor, its energy gap is less than 3 $e V$ .

KCET - 2018

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365196 Assertion :
Silicon is preferred to germanium for making semiconductor devices.
Reason :
The energy gap for germanium is more than the energy gap of silicon.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

The energy gap $(E_{g})$ for germanium is smaller at $0.72 e V$ , while silicon has a larger energy gap of $1.1 e V$ . This distinction makes silicon the preferred choice over germanium for manufacturing semiconductor devices. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365193 In semiconductors the forbidden energy gap between Valence band and Conduction band is of the order of

1

1 e V

2

5 e V

3

1 k e V

4

1 M e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365194 The forbidden energy band gap in conductors, semiconductors and insulators are $E G_{1}, E G_{2},$ and $E G_{3}$ respectively. The relation among them is

1

E G_{1} < E G_{2} < E G_{3}

2

E G_{1} = E G_{2} = E G_{3}

3

E G_{1} < E G_{2} > E G_{3}

4

E G_{1} > E G_{2} > E G_{3}

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365195 The energy gap in case of which of the following is less than 3 $e V$ ?

1 Aluminium

2 Iron

3 Germanium

4 Copper

Explanation:

Since germanium is a semiconductor, its energy gap is less than 3 $e V$ .

KCET - 2018

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365196 Assertion :
Silicon is preferred to germanium for making semiconductor devices.
Reason :
The energy gap for germanium is more than the energy gap of silicon.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

The energy gap $(E_{g})$ for germanium is smaller at $0.72 e V$ , while silicon has a larger energy gap of $1.1 e V$ . This distinction makes silicon the preferred choice over germanium for manufacturing semiconductor devices. So correct option is (3).

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365193 In semiconductors the forbidden energy gap between Valence band and Conduction band is of the order of

1

1 e V

2

5 e V

3

1 k e V

4

1 M e V

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365194 The forbidden energy band gap in conductors, semiconductors and insulators are $E G_{1}, E G_{2},$ and $E G_{3}$ respectively. The relation among them is

1

E G_{1} < E G_{2} < E G_{3}

2

E G_{1} = E G_{2} = E G_{3}

3

E G_{1} < E G_{2} > E G_{3}

4

E G_{1} > E G_{2} > E G_{3}

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365195 The energy gap in case of which of the following is less than 3 $e V$ ?

1 Aluminium

2 Iron

3 Germanium

4 Copper

Explanation:

Since germanium is a semiconductor, its energy gap is less than 3 $e V$ .

KCET - 2018

PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365196 Assertion :
Silicon is preferred to germanium for making semiconductor devices.
Reason :
The energy gap for germanium is more than the energy gap of silicon.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.

2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.

3 Assertion is correct but Reason is incorrect.

4 Assertion is incorrect but reason is correct.

Explanation:

The energy gap $(E_{g})$ for germanium is smaller at $0.72 e V$ , while silicon has a larger energy gap of $1.1 e V$ . This distinction makes silicon the preferred choice over germanium for manufacturing semiconductor devices. So correct option is (3).