365189 Assertion :
The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature decrease exponentially with increasing band gap.
Reason :
It will be more difficult for the electron to cross over the large band gap while going from valence band to conduction band.

365190 In a semiconductor, separation between conduction and valence band is of the order of

365191 Based on the energy band description, a solid can be classified as an insulator. The energy gap between the valence band and conduction band is

365192 Band gap of silicon is \({E_g}(Si)\) of germanium is \({E_g}(Ge)\) and of carbon is \({E_g}(C)\). The correct order of band gap is

365189 Assertion :
The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature decrease exponentially with increasing band gap.
Reason :
It will be more difficult for the electron to cross over the large band gap while going from valence band to conduction band.

365190 In a semiconductor, separation between conduction and valence band is of the order of

365191 Based on the energy band description, a solid can be classified as an insulator. The energy gap between the valence band and conduction band is

365192 Band gap of silicon is \({E_g}(Si)\) of germanium is \({E_g}(Ge)\) and of carbon is \({E_g}(C)\). The correct order of band gap is

365189 Assertion :
The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature decrease exponentially with increasing band gap.
Reason :
It will be more difficult for the electron to cross over the large band gap while going from valence band to conduction band.

365190 In a semiconductor, separation between conduction and valence band is of the order of

365191 Based on the energy band description, a solid can be classified as an insulator. The energy gap between the valence band and conduction band is

365192 Band gap of silicon is \({E_g}(Si)\) of germanium is \({E_g}(Ge)\) and of carbon is \({E_g}(C)\). The correct order of band gap is

365189 Assertion :
The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature decrease exponentially with increasing band gap.
Reason :
It will be more difficult for the electron to cross over the large band gap while going from valence band to conduction band.

365190 In a semiconductor, separation between conduction and valence band is of the order of

365191 Based on the energy band description, a solid can be classified as an insulator. The energy gap between the valence band and conduction band is

365192 Band gap of silicon is \({E_g}(Si)\) of germanium is \({E_g}(Ge)\) and of carbon is \({E_g}(C)\). The correct order of band gap is