Junction Transistors (npn, pnp)
Semiconductor Electronics Material Devices and Simple Circuits

151098 In n-p-n transistor circuit, the collector current is \(20 \mathrm{~mA}\). If \(\mathbf{9 0 \%}\) of the electrons emitted reach the collector, then the

1 emitter current will be about \(16 \mathrm{~mA}\)
2 emitter current will be \(19 \mathrm{~mA}\)
3 base current will be about \(2 \mathrm{~mA}\)
4 base current will be about \(10 \mathrm{~mA}\)
Semiconductor Electronics Material Devices and Simple Circuits

151099 Identify the diode which is forward biased in the following set
a. original image
B. original image
C. original image
D. original image

1 Only B
2 A and B
3 A, B and C
4 A, B, C and D
Semiconductor Electronics Material Devices and Simple Circuits

151103 For the transistor circuit shown in figure, if \(\beta=\) 100, voltage drop across emitter and base is \(0.7 \mathrm{~V}\), then the value of \(\mathrm{V}_{\mathrm{CE}}\) will be-
original image

1 Zero
2 \(5 \mathrm{~V}\)
3 \(10 \mathrm{~V}\)
4 \(13 \mathrm{~V}\)
Semiconductor Electronics Material Devices and Simple Circuits

151104 The input resistance of a common emitter transistor amplifier, if the output resistance is \(500 \mathrm{k} \Omega\), the current gain \(\alpha=0.98\) and the power gain is \(6.0625 \times 10^6\), is-

1 \(198 \Omega\)
2 \(300 \Omega\)
3 \(100 \Omega\)
4 \(400 \Omega\)
Semiconductor Electronics Material Devices and Simple Circuits

151098 In n-p-n transistor circuit, the collector current is \(20 \mathrm{~mA}\). If \(\mathbf{9 0 \%}\) of the electrons emitted reach the collector, then the

1 emitter current will be about \(16 \mathrm{~mA}\)
2 emitter current will be \(19 \mathrm{~mA}\)
3 base current will be about \(2 \mathrm{~mA}\)
4 base current will be about \(10 \mathrm{~mA}\)
Semiconductor Electronics Material Devices and Simple Circuits

151099 Identify the diode which is forward biased in the following set
a. original image
B. original image
C. original image
D. original image

1 Only B
2 A and B
3 A, B and C
4 A, B, C and D
Semiconductor Electronics Material Devices and Simple Circuits

151103 For the transistor circuit shown in figure, if \(\beta=\) 100, voltage drop across emitter and base is \(0.7 \mathrm{~V}\), then the value of \(\mathrm{V}_{\mathrm{CE}}\) will be-
original image

1 Zero
2 \(5 \mathrm{~V}\)
3 \(10 \mathrm{~V}\)
4 \(13 \mathrm{~V}\)
Semiconductor Electronics Material Devices and Simple Circuits

151104 The input resistance of a common emitter transistor amplifier, if the output resistance is \(500 \mathrm{k} \Omega\), the current gain \(\alpha=0.98\) and the power gain is \(6.0625 \times 10^6\), is-

1 \(198 \Omega\)
2 \(300 \Omega\)
3 \(100 \Omega\)
4 \(400 \Omega\)
Semiconductor Electronics Material Devices and Simple Circuits

151098 In n-p-n transistor circuit, the collector current is \(20 \mathrm{~mA}\). If \(\mathbf{9 0 \%}\) of the electrons emitted reach the collector, then the

1 emitter current will be about \(16 \mathrm{~mA}\)
2 emitter current will be \(19 \mathrm{~mA}\)
3 base current will be about \(2 \mathrm{~mA}\)
4 base current will be about \(10 \mathrm{~mA}\)
Semiconductor Electronics Material Devices and Simple Circuits

151099 Identify the diode which is forward biased in the following set
a. original image
B. original image
C. original image
D. original image

1 Only B
2 A and B
3 A, B and C
4 A, B, C and D
Semiconductor Electronics Material Devices and Simple Circuits

151103 For the transistor circuit shown in figure, if \(\beta=\) 100, voltage drop across emitter and base is \(0.7 \mathrm{~V}\), then the value of \(\mathrm{V}_{\mathrm{CE}}\) will be-
original image

1 Zero
2 \(5 \mathrm{~V}\)
3 \(10 \mathrm{~V}\)
4 \(13 \mathrm{~V}\)
Semiconductor Electronics Material Devices and Simple Circuits

151104 The input resistance of a common emitter transistor amplifier, if the output resistance is \(500 \mathrm{k} \Omega\), the current gain \(\alpha=0.98\) and the power gain is \(6.0625 \times 10^6\), is-

1 \(198 \Omega\)
2 \(300 \Omega\)
3 \(100 \Omega\)
4 \(400 \Omega\)
Semiconductor Electronics Material Devices and Simple Circuits

151098 In n-p-n transistor circuit, the collector current is \(20 \mathrm{~mA}\). If \(\mathbf{9 0 \%}\) of the electrons emitted reach the collector, then the

1 emitter current will be about \(16 \mathrm{~mA}\)
2 emitter current will be \(19 \mathrm{~mA}\)
3 base current will be about \(2 \mathrm{~mA}\)
4 base current will be about \(10 \mathrm{~mA}\)
Semiconductor Electronics Material Devices and Simple Circuits

151099 Identify the diode which is forward biased in the following set
a. original image
B. original image
C. original image
D. original image

1 Only B
2 A and B
3 A, B and C
4 A, B, C and D
Semiconductor Electronics Material Devices and Simple Circuits

151103 For the transistor circuit shown in figure, if \(\beta=\) 100, voltage drop across emitter and base is \(0.7 \mathrm{~V}\), then the value of \(\mathrm{V}_{\mathrm{CE}}\) will be-
original image

1 Zero
2 \(5 \mathrm{~V}\)
3 \(10 \mathrm{~V}\)
4 \(13 \mathrm{~V}\)
Semiconductor Electronics Material Devices and Simple Circuits

151104 The input resistance of a common emitter transistor amplifier, if the output resistance is \(500 \mathrm{k} \Omega\), the current gain \(\alpha=0.98\) and the power gain is \(6.0625 \times 10^6\), is-

1 \(198 \Omega\)
2 \(300 \Omega\)
3 \(100 \Omega\)
4 \(400 \Omega\)