Junction Transistors (npn, pnp)
« Previous Topic: Optoelectronic Junction Devices (Photodiode,LED,Solar Cell) Next Topic: Digital Electronics, Logic gates and Digital Circuit »
NEET DIGITAL LIBRARY
Semiconductor Electronics Material Devices and Simple Circuits

151091 The variation of anode current in a triode valve corresponding to a change in grid potential at three different values of the plate potential is shown in the given figure.
The mutual conductance of triode is
original image

1 \(5 \times 10^{-3} \mathrm{mho}\)
2 \(2.5 \times 10^{-3} \mathrm{mho}\)
3 \(7.5 \times 10^{-3} \mathrm{mho}\)
4 \(9.5 \times 10^{-3} \mathrm{mho}\)
AIIMS-2000
Semiconductor Electronics Material Devices and Simple Circuits

151092 A triode valve has an amplification factor of 20 and its plate is given a potential of \(300 \mathrm{~V}\). The grid voltage to reduce the plate current to zero, is

1 \(25 \mathrm{~V}\)
2 \(15 \mathrm{~V}\)
3 \(12 \mathrm{~V}\)
4 \(10 \mathrm{~V}\)
AIIMS-1999
Semiconductor Electronics Material Devices and Simple Circuits

151093 The transfer ratio \(\beta\) of a transistor is 50 . The input resistance of the transistor when used in the common emitter configurations \(1 \mathrm{k} \Omega\). The peak value of the collector A.C. current for an A.C. input voltage of \(0.01 \mathrm{~V}\), is

1 \(500 \mu \mathrm{A}\)
2 \(0.25 \mu \mathrm{A}\)
3 \(0.01 \mu \mathrm{A}\)
4 \(100 \mu \mathrm{A}\)
MHT-CET 2019
Semiconductor Electronics Material Devices and Simple Circuits

151096 The current gain of a transistor in a common base arrangement is 0.98 . The change in collector current corresponding to a change of \(5 \mathrm{~mA}\) in emitter current is-

1 \(0.1 \mathrm{~mA}\)
2 \(0.2 \mathrm{~mA}\)
3 \(4.9 \mathrm{~mA}\)
4 \(9.2 \mathrm{~mA}\)
BCECE-2014
Join With Us for More Updates
Semiconductor Electronics Material Devices and Simple Circuits

151091 The variation of anode current in a triode valve corresponding to a change in grid potential at three different values of the plate potential is shown in the given figure.
The mutual conductance of triode is
original image

1 \(5 \times 10^{-3} \mathrm{mho}\)
2 \(2.5 \times 10^{-3} \mathrm{mho}\)
3 \(7.5 \times 10^{-3} \mathrm{mho}\)
4 \(9.5 \times 10^{-3} \mathrm{mho}\)
AIIMS-2000
Semiconductor Electronics Material Devices and Simple Circuits

151092 A triode valve has an amplification factor of 20 and its plate is given a potential of \(300 \mathrm{~V}\). The grid voltage to reduce the plate current to zero, is

1 \(25 \mathrm{~V}\)
2 \(15 \mathrm{~V}\)
3 \(12 \mathrm{~V}\)
4 \(10 \mathrm{~V}\)
AIIMS-1999
Semiconductor Electronics Material Devices and Simple Circuits

151093 The transfer ratio \(\beta\) of a transistor is 50 . The input resistance of the transistor when used in the common emitter configurations \(1 \mathrm{k} \Omega\). The peak value of the collector A.C. current for an A.C. input voltage of \(0.01 \mathrm{~V}\), is

1 \(500 \mu \mathrm{A}\)
2 \(0.25 \mu \mathrm{A}\)
3 \(0.01 \mu \mathrm{A}\)
4 \(100 \mu \mathrm{A}\)
MHT-CET 2019
Semiconductor Electronics Material Devices and Simple Circuits

151096 The current gain of a transistor in a common base arrangement is 0.98 . The change in collector current corresponding to a change of \(5 \mathrm{~mA}\) in emitter current is-

1 \(0.1 \mathrm{~mA}\)
2 \(0.2 \mathrm{~mA}\)
3 \(4.9 \mathrm{~mA}\)
4 \(9.2 \mathrm{~mA}\)
BCECE-2014
For More Updates join with Us
Semiconductor Electronics Material Devices and Simple Circuits

151091 The variation of anode current in a triode valve corresponding to a change in grid potential at three different values of the plate potential is shown in the given figure.
The mutual conductance of triode is
original image

1 \(5 \times 10^{-3} \mathrm{mho}\)
2 \(2.5 \times 10^{-3} \mathrm{mho}\)
3 \(7.5 \times 10^{-3} \mathrm{mho}\)
4 \(9.5 \times 10^{-3} \mathrm{mho}\)
AIIMS-2000
Semiconductor Electronics Material Devices and Simple Circuits

151092 A triode valve has an amplification factor of 20 and its plate is given a potential of \(300 \mathrm{~V}\). The grid voltage to reduce the plate current to zero, is

1 \(25 \mathrm{~V}\)
2 \(15 \mathrm{~V}\)
3 \(12 \mathrm{~V}\)
4 \(10 \mathrm{~V}\)
AIIMS-1999
Semiconductor Electronics Material Devices and Simple Circuits

151093 The transfer ratio \(\beta\) of a transistor is 50 . The input resistance of the transistor when used in the common emitter configurations \(1 \mathrm{k} \Omega\). The peak value of the collector A.C. current for an A.C. input voltage of \(0.01 \mathrm{~V}\), is

1 \(500 \mu \mathrm{A}\)
2 \(0.25 \mu \mathrm{A}\)
3 \(0.01 \mu \mathrm{A}\)
4 \(100 \mu \mathrm{A}\)
MHT-CET 2019
Semiconductor Electronics Material Devices and Simple Circuits

151096 The current gain of a transistor in a common base arrangement is 0.98 . The change in collector current corresponding to a change of \(5 \mathrm{~mA}\) in emitter current is-

1 \(0.1 \mathrm{~mA}\)
2 \(0.2 \mathrm{~mA}\)
3 \(4.9 \mathrm{~mA}\)
4 \(9.2 \mathrm{~mA}\)
BCECE-2014
NEET DIGITAL LIBRARY
Semiconductor Electronics Material Devices and Simple Circuits

151091 The variation of anode current in a triode valve corresponding to a change in grid potential at three different values of the plate potential is shown in the given figure.
The mutual conductance of triode is
original image

1 \(5 \times 10^{-3} \mathrm{mho}\)
2 \(2.5 \times 10^{-3} \mathrm{mho}\)
3 \(7.5 \times 10^{-3} \mathrm{mho}\)
4 \(9.5 \times 10^{-3} \mathrm{mho}\)
AIIMS-2000
Semiconductor Electronics Material Devices and Simple Circuits

151092 A triode valve has an amplification factor of 20 and its plate is given a potential of \(300 \mathrm{~V}\). The grid voltage to reduce the plate current to zero, is

1 \(25 \mathrm{~V}\)
2 \(15 \mathrm{~V}\)
3 \(12 \mathrm{~V}\)
4 \(10 \mathrm{~V}\)
AIIMS-1999
Semiconductor Electronics Material Devices and Simple Circuits

151093 The transfer ratio \(\beta\) of a transistor is 50 . The input resistance of the transistor when used in the common emitter configurations \(1 \mathrm{k} \Omega\). The peak value of the collector A.C. current for an A.C. input voltage of \(0.01 \mathrm{~V}\), is

1 \(500 \mu \mathrm{A}\)
2 \(0.25 \mu \mathrm{A}\)
3 \(0.01 \mu \mathrm{A}\)
4 \(100 \mu \mathrm{A}\)
MHT-CET 2019
Semiconductor Electronics Material Devices and Simple Circuits

151096 The current gain of a transistor in a common base arrangement is 0.98 . The change in collector current corresponding to a change of \(5 \mathrm{~mA}\) in emitter current is-

1 \(0.1 \mathrm{~mA}\)
2 \(0.2 \mathrm{~mA}\)
3 \(4.9 \mathrm{~mA}\)
4 \(9.2 \mathrm{~mA}\)
BCECE-2014
Join With Us for More Updates