150980 Given below are two Statements : one is labelled as Assertion A and the other is labelled as Reason \(\mathrm{R}\)
Assertion A: Photodiodes are preferably Operated in reverse bias condition for light intensity measurement.
Reason R: The current in the forward bias is more than the current in the reverse bias for a p-n junction diode.
In the light of the above statement, choose correct answer from the option given the below:

150990 An LED is constructed from a p-n junction based on a certain semi-conducting material whose energy gap is \(1.9 \mathrm{eV}\). Then, the wavelength of the emitted light is :

150993 For LED's to emit light in visible region of electromagnetic radiation, it should have energy band gap in the range of

150995 The three basic processes of generation of \(\mathrm{emf}\) by a solar cell is due to

150997 When light falls on a solar cell, the generation of emf happens due to

150980 Given below are two Statements : one is labelled as Assertion A and the other is labelled as Reason \(\mathrm{R}\)
Assertion A: Photodiodes are preferably Operated in reverse bias condition for light intensity measurement.
Reason R: The current in the forward bias is more than the current in the reverse bias for a p-n junction diode.
In the light of the above statement, choose correct answer from the option given the below:

150990 An LED is constructed from a p-n junction based on a certain semi-conducting material whose energy gap is \(1.9 \mathrm{eV}\). Then, the wavelength of the emitted light is :

150993 For LED's to emit light in visible region of electromagnetic radiation, it should have energy band gap in the range of

150995 The three basic processes of generation of \(\mathrm{emf}\) by a solar cell is due to

150997 When light falls on a solar cell, the generation of emf happens due to

150980 Given below are two Statements : one is labelled as Assertion A and the other is labelled as Reason \(\mathrm{R}\)
Assertion A: Photodiodes are preferably Operated in reverse bias condition for light intensity measurement.
Reason R: The current in the forward bias is more than the current in the reverse bias for a p-n junction diode.
In the light of the above statement, choose correct answer from the option given the below:

150990 An LED is constructed from a p-n junction based on a certain semi-conducting material whose energy gap is \(1.9 \mathrm{eV}\). Then, the wavelength of the emitted light is :

150993 For LED's to emit light in visible region of electromagnetic radiation, it should have energy band gap in the range of

150995 The three basic processes of generation of \(\mathrm{emf}\) by a solar cell is due to

150997 When light falls on a solar cell, the generation of emf happens due to

150980 Given below are two Statements : one is labelled as Assertion A and the other is labelled as Reason \(\mathrm{R}\)
Assertion A: Photodiodes are preferably Operated in reverse bias condition for light intensity measurement.
Reason R: The current in the forward bias is more than the current in the reverse bias for a p-n junction diode.
In the light of the above statement, choose correct answer from the option given the below:

150990 An LED is constructed from a p-n junction based on a certain semi-conducting material whose energy gap is \(1.9 \mathrm{eV}\). Then, the wavelength of the emitted light is :

150993 For LED's to emit light in visible region of electromagnetic radiation, it should have energy band gap in the range of

150995 The three basic processes of generation of \(\mathrm{emf}\) by a solar cell is due to

150997 When light falls on a solar cell, the generation of emf happens due to

150980 Given below are two Statements : one is labelled as Assertion A and the other is labelled as Reason \(\mathrm{R}\)
Assertion A: Photodiodes are preferably Operated in reverse bias condition for light intensity measurement.
Reason R: The current in the forward bias is more than the current in the reverse bias for a p-n junction diode.
In the light of the above statement, choose correct answer from the option given the below:

150990 An LED is constructed from a p-n junction based on a certain semi-conducting material whose energy gap is \(1.9 \mathrm{eV}\). Then, the wavelength of the emitted light is :

150993 For LED's to emit light in visible region of electromagnetic radiation, it should have energy band gap in the range of

150995 The three basic processes of generation of \(\mathrm{emf}\) by a solar cell is due to

150997 When light falls on a solar cell, the generation of emf happens due to