Semiconductor Electronics Material Devices and Simple Circuits
151015
A LED constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). Identify the colour of the emitted light.
1 blue
2 red
3 violet
4 green
Explanation:
B Given that, Energy gap is \(1.9 \mathrm{eV}\) \(\lambda=\frac{\mathrm{hc}}{\mathrm{E}}\) \(\lambda=\frac{6.63 \times 10^{-34} \times 3 \times 10^8}{1.9 \times 1.6 \times 10^{-19}}\) \(\lambda=6.54 \times 10^{-7}\) \(\lambda=654 \mathrm{~nm}\) The red light has longer waves, with wavelength around 620 to \(750 \mathrm{~nm}\).
AMU-2013
Semiconductor Electronics Material Devices and Simple Circuits
151003
Assertion: Photodiode work in reverse bias. Reason: Change in diode current increases with increase in intensity.
1 If both assertion and reason are true and reason is the correct explanation of assertion.
2 If both assertion and reason are true but reason is not the correct explanation of assertion.
3 If assertion is true but reason is false.
4 If both assertion and reason are false.
Explanation:
B Photodiodes work in reverse biased because the width of the depletion layer increases as compare to forward bias and a small current flow through the diode. Change in diode current increases with increase intensity so both are correct but reason is not correct explanation of assertion.
AIIMS-26.05.2019(E) Shift-2
Semiconductor Electronics Material Devices and Simple Circuits
151005
I-V characteristics for a junction diode is shown. The device is
1 photo cell
2 LED
3 solar cell
4 zener diode
Explanation:
C I-V characteristics for a junction diode is shown. The device is solar cell.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150979
Which one of the following statement is not correct in the case of light emitting diodes?
1 \(\mathrm{B}\)
2 \(\mathrm{C}\)
3 \(\mathrm{A}\)
4 C and D
Explanation:
B Light Emitting diode (LED). Specially designed diodes which give out light radiation when forward biases. LED's are made of GaAsP GaAs etc. Forward biases p-n junction which emits spontaneous radiation. LED's that can emits red, yellow, orange, green and blue light are commercially available the semiconductor used for fabrication of visible LED's most at least have a band gap of \(1.8 \mathrm{eV}\).
Semiconductor Electronics Material Devices and Simple Circuits
151015
A LED constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). Identify the colour of the emitted light.
1 blue
2 red
3 violet
4 green
Explanation:
B Given that, Energy gap is \(1.9 \mathrm{eV}\) \(\lambda=\frac{\mathrm{hc}}{\mathrm{E}}\) \(\lambda=\frac{6.63 \times 10^{-34} \times 3 \times 10^8}{1.9 \times 1.6 \times 10^{-19}}\) \(\lambda=6.54 \times 10^{-7}\) \(\lambda=654 \mathrm{~nm}\) The red light has longer waves, with wavelength around 620 to \(750 \mathrm{~nm}\).
AMU-2013
Semiconductor Electronics Material Devices and Simple Circuits
151003
Assertion: Photodiode work in reverse bias. Reason: Change in diode current increases with increase in intensity.
1 If both assertion and reason are true and reason is the correct explanation of assertion.
2 If both assertion and reason are true but reason is not the correct explanation of assertion.
3 If assertion is true but reason is false.
4 If both assertion and reason are false.
Explanation:
B Photodiodes work in reverse biased because the width of the depletion layer increases as compare to forward bias and a small current flow through the diode. Change in diode current increases with increase intensity so both are correct but reason is not correct explanation of assertion.
AIIMS-26.05.2019(E) Shift-2
Semiconductor Electronics Material Devices and Simple Circuits
151005
I-V characteristics for a junction diode is shown. The device is
1 photo cell
2 LED
3 solar cell
4 zener diode
Explanation:
C I-V characteristics for a junction diode is shown. The device is solar cell.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150979
Which one of the following statement is not correct in the case of light emitting diodes?
1 \(\mathrm{B}\)
2 \(\mathrm{C}\)
3 \(\mathrm{A}\)
4 C and D
Explanation:
B Light Emitting diode (LED). Specially designed diodes which give out light radiation when forward biases. LED's are made of GaAsP GaAs etc. Forward biases p-n junction which emits spontaneous radiation. LED's that can emits red, yellow, orange, green and blue light are commercially available the semiconductor used for fabrication of visible LED's most at least have a band gap of \(1.8 \mathrm{eV}\).
Semiconductor Electronics Material Devices and Simple Circuits
151015
A LED constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). Identify the colour of the emitted light.
1 blue
2 red
3 violet
4 green
Explanation:
B Given that, Energy gap is \(1.9 \mathrm{eV}\) \(\lambda=\frac{\mathrm{hc}}{\mathrm{E}}\) \(\lambda=\frac{6.63 \times 10^{-34} \times 3 \times 10^8}{1.9 \times 1.6 \times 10^{-19}}\) \(\lambda=6.54 \times 10^{-7}\) \(\lambda=654 \mathrm{~nm}\) The red light has longer waves, with wavelength around 620 to \(750 \mathrm{~nm}\).
AMU-2013
Semiconductor Electronics Material Devices and Simple Circuits
151003
Assertion: Photodiode work in reverse bias. Reason: Change in diode current increases with increase in intensity.
1 If both assertion and reason are true and reason is the correct explanation of assertion.
2 If both assertion and reason are true but reason is not the correct explanation of assertion.
3 If assertion is true but reason is false.
4 If both assertion and reason are false.
Explanation:
B Photodiodes work in reverse biased because the width of the depletion layer increases as compare to forward bias and a small current flow through the diode. Change in diode current increases with increase intensity so both are correct but reason is not correct explanation of assertion.
AIIMS-26.05.2019(E) Shift-2
Semiconductor Electronics Material Devices and Simple Circuits
151005
I-V characteristics for a junction diode is shown. The device is
1 photo cell
2 LED
3 solar cell
4 zener diode
Explanation:
C I-V characteristics for a junction diode is shown. The device is solar cell.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150979
Which one of the following statement is not correct in the case of light emitting diodes?
1 \(\mathrm{B}\)
2 \(\mathrm{C}\)
3 \(\mathrm{A}\)
4 C and D
Explanation:
B Light Emitting diode (LED). Specially designed diodes which give out light radiation when forward biases. LED's are made of GaAsP GaAs etc. Forward biases p-n junction which emits spontaneous radiation. LED's that can emits red, yellow, orange, green and blue light are commercially available the semiconductor used for fabrication of visible LED's most at least have a band gap of \(1.8 \mathrm{eV}\).
Semiconductor Electronics Material Devices and Simple Circuits
151015
A LED constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). Identify the colour of the emitted light.
1 blue
2 red
3 violet
4 green
Explanation:
B Given that, Energy gap is \(1.9 \mathrm{eV}\) \(\lambda=\frac{\mathrm{hc}}{\mathrm{E}}\) \(\lambda=\frac{6.63 \times 10^{-34} \times 3 \times 10^8}{1.9 \times 1.6 \times 10^{-19}}\) \(\lambda=6.54 \times 10^{-7}\) \(\lambda=654 \mathrm{~nm}\) The red light has longer waves, with wavelength around 620 to \(750 \mathrm{~nm}\).
AMU-2013
Semiconductor Electronics Material Devices and Simple Circuits
151003
Assertion: Photodiode work in reverse bias. Reason: Change in diode current increases with increase in intensity.
1 If both assertion and reason are true and reason is the correct explanation of assertion.
2 If both assertion and reason are true but reason is not the correct explanation of assertion.
3 If assertion is true but reason is false.
4 If both assertion and reason are false.
Explanation:
B Photodiodes work in reverse biased because the width of the depletion layer increases as compare to forward bias and a small current flow through the diode. Change in diode current increases with increase intensity so both are correct but reason is not correct explanation of assertion.
AIIMS-26.05.2019(E) Shift-2
Semiconductor Electronics Material Devices and Simple Circuits
151005
I-V characteristics for a junction diode is shown. The device is
1 photo cell
2 LED
3 solar cell
4 zener diode
Explanation:
C I-V characteristics for a junction diode is shown. The device is solar cell.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150979
Which one of the following statement is not correct in the case of light emitting diodes?
1 \(\mathrm{B}\)
2 \(\mathrm{C}\)
3 \(\mathrm{A}\)
4 C and D
Explanation:
B Light Emitting diode (LED). Specially designed diodes which give out light radiation when forward biases. LED's are made of GaAsP GaAs etc. Forward biases p-n junction which emits spontaneous radiation. LED's that can emits red, yellow, orange, green and blue light are commercially available the semiconductor used for fabrication of visible LED's most at least have a band gap of \(1.8 \mathrm{eV}\).
