Semiconductor Electronics Material Devices and Simple Circuits
151012
A p-n photodiode is made of a material with a band gap of \(2.0 \mathrm{eV}\). The minimum frequency of the radiation that can be absorbed by the material is nearly
1 \(10 \times 10^{14} \mathrm{~Hz}\)
2 \(5 \times 10^{14} \mathrm{~Hz}\)
3 \(1 \times 10^{14} \mathrm{~Hz}\)
4 \(20 \times 10^{14} \mathrm{~Hz}\)
Explanation:
B For absorbing minimum frequency of radiation the condition is given below. Energy of radiation = band gap energy \(\mathrm{h} v =2.0 \mathrm{eV}\) \(v =\frac{2.0 \times 1.6 \times 10^{-19}}{6.6 \times 10^{-34}}\) \(v \approx 5 \times 10^{14} \mathrm{~Hz}\)
AIPMT- 2008
Semiconductor Electronics Material Devices and Simple Circuits
150981
The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :
1 fractional change in majority carriers produce higher forward bias current
2 fractional change in majority carriers produce higher reverse bias current
3 fractional change in minority carriers produce higher forward bias current
4 fractional change in minority carriers produce higher reverse bias current
Explanation:
D The photo diodes are preferred to operate in reverse biased mode. Because by very small change in minority carrier produces higher reverse bias current.
JEE Main-25.06.2022
Semiconductor Electronics Material Devices and Simple Circuits
150982
The special purpose diode operated/working under forward bias is/are
1 zener diode and LED
2 photo diode and LED
3 zener diode and solar cell
4 LED
5 photo diode
Explanation:
D The special purpose diode operated under forward bias is LED. Due to forward bias, at the boundary, the concentration of the minority carriers increases as the junction, majority carriers recombines with excess minority carriers.
Kerala CEE 04.07.2022
Semiconductor Electronics Material Devices and Simple Circuits
150983
In a solar cell current is generated due to bond breakage in
1 depletion region
2 n- region
3 p-region
4 None of these
Explanation:
B In a solar cell current is generated due to bond breakage in depletion region. Solar cells are sensitive to temperature.
Semiconductor Electronics Material Devices and Simple Circuits
151012
A p-n photodiode is made of a material with a band gap of \(2.0 \mathrm{eV}\). The minimum frequency of the radiation that can be absorbed by the material is nearly
1 \(10 \times 10^{14} \mathrm{~Hz}\)
2 \(5 \times 10^{14} \mathrm{~Hz}\)
3 \(1 \times 10^{14} \mathrm{~Hz}\)
4 \(20 \times 10^{14} \mathrm{~Hz}\)
Explanation:
B For absorbing minimum frequency of radiation the condition is given below. Energy of radiation = band gap energy \(\mathrm{h} v =2.0 \mathrm{eV}\) \(v =\frac{2.0 \times 1.6 \times 10^{-19}}{6.6 \times 10^{-34}}\) \(v \approx 5 \times 10^{14} \mathrm{~Hz}\)
AIPMT- 2008
Semiconductor Electronics Material Devices and Simple Circuits
150981
The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :
1 fractional change in majority carriers produce higher forward bias current
2 fractional change in majority carriers produce higher reverse bias current
3 fractional change in minority carriers produce higher forward bias current
4 fractional change in minority carriers produce higher reverse bias current
Explanation:
D The photo diodes are preferred to operate in reverse biased mode. Because by very small change in minority carrier produces higher reverse bias current.
JEE Main-25.06.2022
Semiconductor Electronics Material Devices and Simple Circuits
150982
The special purpose diode operated/working under forward bias is/are
1 zener diode and LED
2 photo diode and LED
3 zener diode and solar cell
4 LED
5 photo diode
Explanation:
D The special purpose diode operated under forward bias is LED. Due to forward bias, at the boundary, the concentration of the minority carriers increases as the junction, majority carriers recombines with excess minority carriers.
Kerala CEE 04.07.2022
Semiconductor Electronics Material Devices and Simple Circuits
150983
In a solar cell current is generated due to bond breakage in
1 depletion region
2 n- region
3 p-region
4 None of these
Explanation:
B In a solar cell current is generated due to bond breakage in depletion region. Solar cells are sensitive to temperature.
Semiconductor Electronics Material Devices and Simple Circuits
151012
A p-n photodiode is made of a material with a band gap of \(2.0 \mathrm{eV}\). The minimum frequency of the radiation that can be absorbed by the material is nearly
1 \(10 \times 10^{14} \mathrm{~Hz}\)
2 \(5 \times 10^{14} \mathrm{~Hz}\)
3 \(1 \times 10^{14} \mathrm{~Hz}\)
4 \(20 \times 10^{14} \mathrm{~Hz}\)
Explanation:
B For absorbing minimum frequency of radiation the condition is given below. Energy of radiation = band gap energy \(\mathrm{h} v =2.0 \mathrm{eV}\) \(v =\frac{2.0 \times 1.6 \times 10^{-19}}{6.6 \times 10^{-34}}\) \(v \approx 5 \times 10^{14} \mathrm{~Hz}\)
AIPMT- 2008
Semiconductor Electronics Material Devices and Simple Circuits
150981
The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :
1 fractional change in majority carriers produce higher forward bias current
2 fractional change in majority carriers produce higher reverse bias current
3 fractional change in minority carriers produce higher forward bias current
4 fractional change in minority carriers produce higher reverse bias current
Explanation:
D The photo diodes are preferred to operate in reverse biased mode. Because by very small change in minority carrier produces higher reverse bias current.
JEE Main-25.06.2022
Semiconductor Electronics Material Devices and Simple Circuits
150982
The special purpose diode operated/working under forward bias is/are
1 zener diode and LED
2 photo diode and LED
3 zener diode and solar cell
4 LED
5 photo diode
Explanation:
D The special purpose diode operated under forward bias is LED. Due to forward bias, at the boundary, the concentration of the minority carriers increases as the junction, majority carriers recombines with excess minority carriers.
Kerala CEE 04.07.2022
Semiconductor Electronics Material Devices and Simple Circuits
150983
In a solar cell current is generated due to bond breakage in
1 depletion region
2 n- region
3 p-region
4 None of these
Explanation:
B In a solar cell current is generated due to bond breakage in depletion region. Solar cells are sensitive to temperature.
Semiconductor Electronics Material Devices and Simple Circuits
151012
A p-n photodiode is made of a material with a band gap of \(2.0 \mathrm{eV}\). The minimum frequency of the radiation that can be absorbed by the material is nearly
1 \(10 \times 10^{14} \mathrm{~Hz}\)
2 \(5 \times 10^{14} \mathrm{~Hz}\)
3 \(1 \times 10^{14} \mathrm{~Hz}\)
4 \(20 \times 10^{14} \mathrm{~Hz}\)
Explanation:
B For absorbing minimum frequency of radiation the condition is given below. Energy of radiation = band gap energy \(\mathrm{h} v =2.0 \mathrm{eV}\) \(v =\frac{2.0 \times 1.6 \times 10^{-19}}{6.6 \times 10^{-34}}\) \(v \approx 5 \times 10^{14} \mathrm{~Hz}\)
AIPMT- 2008
Semiconductor Electronics Material Devices and Simple Circuits
150981
The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :
1 fractional change in majority carriers produce higher forward bias current
2 fractional change in majority carriers produce higher reverse bias current
3 fractional change in minority carriers produce higher forward bias current
4 fractional change in minority carriers produce higher reverse bias current
Explanation:
D The photo diodes are preferred to operate in reverse biased mode. Because by very small change in minority carrier produces higher reverse bias current.
JEE Main-25.06.2022
Semiconductor Electronics Material Devices and Simple Circuits
150982
The special purpose diode operated/working under forward bias is/are
1 zener diode and LED
2 photo diode and LED
3 zener diode and solar cell
4 LED
5 photo diode
Explanation:
D The special purpose diode operated under forward bias is LED. Due to forward bias, at the boundary, the concentration of the minority carriers increases as the junction, majority carriers recombines with excess minority carriers.
Kerala CEE 04.07.2022
Semiconductor Electronics Material Devices and Simple Circuits
150983
In a solar cell current is generated due to bond breakage in
1 depletion region
2 n- region
3 p-region
4 None of these
Explanation:
B In a solar cell current is generated due to bond breakage in depletion region. Solar cells are sensitive to temperature.
