Diode -(P-n Junction Diode Forward and Reverse Bias)
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Semiconductor Electronics Material Devices and Simple Circuits

150929 In the half wave rectifier circuit operating with \(50 \mathrm{~Hz}\) mains frequency. The fundamental frequency in the ripple will be

1 \(100 \mathrm{~Hz}\)
2 \(20 \mathrm{~Hz}\)
3 \(50 \mathrm{~Hz}\)
4 \(25 \mathrm{~Hz}\)
VITEEE-2015
Semiconductor Electronics Material Devices and Simple Circuits

150931 The width of the depletion region in a P-N junction diode is :

1 increased by reverse bias
2 increased by forward bias
3 decreased by reverse bias
4 independent of the bias voltage
Karnataka CET-2013
Semiconductor Electronics Material Devices and Simple Circuits

150932 When a semiconducting device is connected in series with a battery and a resistance, a current is found to flow in the circuit. If however, the polarity of the battery is reversed, practically no current flows in the circuit. The device may be

1 a p-type semiconductor
2 a n-type semiconductor
3 an intrinsic semiconductor
4 a p-n junction
WB JEE 2017
Semiconductor Electronics Material Devices and Simple Circuits

150933 In junction diode, the holes are because of

1 missing electrons
2 extra electrons
3 protons
4 neutrons
JIPMER-2004
NEET DIGITAL LIBRARY
Semiconductor Electronics Material Devices and Simple Circuits

150929 In the half wave rectifier circuit operating with \(50 \mathrm{~Hz}\) mains frequency. The fundamental frequency in the ripple will be

1 \(100 \mathrm{~Hz}\)
2 \(20 \mathrm{~Hz}\)
3 \(50 \mathrm{~Hz}\)
4 \(25 \mathrm{~Hz}\)
VITEEE-2015
Semiconductor Electronics Material Devices and Simple Circuits

150931 The width of the depletion region in a P-N junction diode is :

1 increased by reverse bias
2 increased by forward bias
3 decreased by reverse bias
4 independent of the bias voltage
Karnataka CET-2013
Semiconductor Electronics Material Devices and Simple Circuits

150932 When a semiconducting device is connected in series with a battery and a resistance, a current is found to flow in the circuit. If however, the polarity of the battery is reversed, practically no current flows in the circuit. The device may be

1 a p-type semiconductor
2 a n-type semiconductor
3 an intrinsic semiconductor
4 a p-n junction
WB JEE 2017
Semiconductor Electronics Material Devices and Simple Circuits

150933 In junction diode, the holes are because of

1 missing electrons
2 extra electrons
3 protons
4 neutrons
JIPMER-2004
Join With Us for More Updates
Semiconductor Electronics Material Devices and Simple Circuits

150929 In the half wave rectifier circuit operating with \(50 \mathrm{~Hz}\) mains frequency. The fundamental frequency in the ripple will be

1 \(100 \mathrm{~Hz}\)
2 \(20 \mathrm{~Hz}\)
3 \(50 \mathrm{~Hz}\)
4 \(25 \mathrm{~Hz}\)
VITEEE-2015
Semiconductor Electronics Material Devices and Simple Circuits

150931 The width of the depletion region in a P-N junction diode is :

1 increased by reverse bias
2 increased by forward bias
3 decreased by reverse bias
4 independent of the bias voltage
Karnataka CET-2013
Semiconductor Electronics Material Devices and Simple Circuits

150932 When a semiconducting device is connected in series with a battery and a resistance, a current is found to flow in the circuit. If however, the polarity of the battery is reversed, practically no current flows in the circuit. The device may be

1 a p-type semiconductor
2 a n-type semiconductor
3 an intrinsic semiconductor
4 a p-n junction
WB JEE 2017
Semiconductor Electronics Material Devices and Simple Circuits

150933 In junction diode, the holes are because of

1 missing electrons
2 extra electrons
3 protons
4 neutrons
JIPMER-2004
For More Updates join with Us
Semiconductor Electronics Material Devices and Simple Circuits

150929 In the half wave rectifier circuit operating with \(50 \mathrm{~Hz}\) mains frequency. The fundamental frequency in the ripple will be

1 \(100 \mathrm{~Hz}\)
2 \(20 \mathrm{~Hz}\)
3 \(50 \mathrm{~Hz}\)
4 \(25 \mathrm{~Hz}\)
VITEEE-2015
Semiconductor Electronics Material Devices and Simple Circuits

150931 The width of the depletion region in a P-N junction diode is :

1 increased by reverse bias
2 increased by forward bias
3 decreased by reverse bias
4 independent of the bias voltage
Karnataka CET-2013
Semiconductor Electronics Material Devices and Simple Circuits

150932 When a semiconducting device is connected in series with a battery and a resistance, a current is found to flow in the circuit. If however, the polarity of the battery is reversed, practically no current flows in the circuit. The device may be

1 a p-type semiconductor
2 a n-type semiconductor
3 an intrinsic semiconductor
4 a p-n junction
WB JEE 2017
Semiconductor Electronics Material Devices and Simple Circuits

150933 In junction diode, the holes are because of

1 missing electrons
2 extra electrons
3 protons
4 neutrons
JIPMER-2004
NEET DIGITAL LIBRARY