Diode -(P-n Junction Diode Forward and Reverse Bias)
« Previous Topic: Energy Bands (Valance, Conduction, Energy Gap), Conductor Insulator and Semiconductor Next Topic: Zener Diode (Zener Breakdown),Voltage Regulator »
Semiconductor Electronics Material Devices and Simple Circuits

150936 Depletion layer consists of

1 Electrons
2 Protons
3 Mobile charge carriers
4 Immobile ions
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits

150888 When a p-n junction diode is reverse biased the flow of current across the junction is mainly due to

1 Diffusion of charges
2 Drift charges
3 Depends on the nature of material
4 Both drift and diffusion of charges
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits

150889 A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

1 a p-n junction
2 an intrinsic semiconductor
3 a p-type semiconductor
4 an n-type semiconductor
AIPMT- 1998
Semiconductor Electronics Material Devices and Simple Circuits

150876 Avalanche breakdown in a p-n junction diode is due to

1 sudden shift of Fermi level
2 increase in the width of forbidden gap
3 sudden increase of impurity concentration
4 cumulative effect of increase electron collision and creation of added electron hole pairs
AMU-2010
Semiconductor Electronics Material Devices and Simple Circuits

150879 The width of depletion region in p-n junction diode

1 Increases when a reverse bias voltage is applied
2 Increases when a forward bias voltage is applied
3 Decreases when a reverse bias voltage is applied
4 Remains the same, irrespective of the bias voltage
AMU-2006
Join With Us for More Updates
Semiconductor Electronics Material Devices and Simple Circuits

150936 Depletion layer consists of

1 Electrons
2 Protons
3 Mobile charge carriers
4 Immobile ions
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits

150888 When a p-n junction diode is reverse biased the flow of current across the junction is mainly due to

1 Diffusion of charges
2 Drift charges
3 Depends on the nature of material
4 Both drift and diffusion of charges
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits

150889 A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

1 a p-n junction
2 an intrinsic semiconductor
3 a p-type semiconductor
4 an n-type semiconductor
AIPMT- 1998
Semiconductor Electronics Material Devices and Simple Circuits

150876 Avalanche breakdown in a p-n junction diode is due to

1 sudden shift of Fermi level
2 increase in the width of forbidden gap
3 sudden increase of impurity concentration
4 cumulative effect of increase electron collision and creation of added electron hole pairs
AMU-2010
Semiconductor Electronics Material Devices and Simple Circuits

150879 The width of depletion region in p-n junction diode

1 Increases when a reverse bias voltage is applied
2 Increases when a forward bias voltage is applied
3 Decreases when a reverse bias voltage is applied
4 Remains the same, irrespective of the bias voltage
AMU-2006
For More Updates join with Us
Semiconductor Electronics Material Devices and Simple Circuits

150936 Depletion layer consists of

1 Electrons
2 Protons
3 Mobile charge carriers
4 Immobile ions
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits

150888 When a p-n junction diode is reverse biased the flow of current across the junction is mainly due to

1 Diffusion of charges
2 Drift charges
3 Depends on the nature of material
4 Both drift and diffusion of charges
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits

150889 A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

1 a p-n junction
2 an intrinsic semiconductor
3 a p-type semiconductor
4 an n-type semiconductor
AIPMT- 1998
Semiconductor Electronics Material Devices and Simple Circuits

150876 Avalanche breakdown in a p-n junction diode is due to

1 sudden shift of Fermi level
2 increase in the width of forbidden gap
3 sudden increase of impurity concentration
4 cumulative effect of increase electron collision and creation of added electron hole pairs
AMU-2010
Semiconductor Electronics Material Devices and Simple Circuits

150879 The width of depletion region in p-n junction diode

1 Increases when a reverse bias voltage is applied
2 Increases when a forward bias voltage is applied
3 Decreases when a reverse bias voltage is applied
4 Remains the same, irrespective of the bias voltage
AMU-2006
NEET DIGITAL LIBRARY
Semiconductor Electronics Material Devices and Simple Circuits

150936 Depletion layer consists of

1 Electrons
2 Protons
3 Mobile charge carriers
4 Immobile ions
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits

150888 When a p-n junction diode is reverse biased the flow of current across the junction is mainly due to

1 Diffusion of charges
2 Drift charges
3 Depends on the nature of material
4 Both drift and diffusion of charges
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits

150889 A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

1 a p-n junction
2 an intrinsic semiconductor
3 a p-type semiconductor
4 an n-type semiconductor
AIPMT- 1998
Semiconductor Electronics Material Devices and Simple Circuits

150876 Avalanche breakdown in a p-n junction diode is due to

1 sudden shift of Fermi level
2 increase in the width of forbidden gap
3 sudden increase of impurity concentration
4 cumulative effect of increase electron collision and creation of added electron hole pairs
AMU-2010
Semiconductor Electronics Material Devices and Simple Circuits

150879 The width of depletion region in p-n junction diode

1 Increases when a reverse bias voltage is applied
2 Increases when a forward bias voltage is applied
3 Decreases when a reverse bias voltage is applied
4 Remains the same, irrespective of the bias voltage
AMU-2006
Join With Us for More Updates
Semiconductor Electronics Material Devices and Simple Circuits

150936 Depletion layer consists of

1 Electrons
2 Protons
3 Mobile charge carriers
4 Immobile ions
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits

150888 When a p-n junction diode is reverse biased the flow of current across the junction is mainly due to

1 Diffusion of charges
2 Drift charges
3 Depends on the nature of material
4 Both drift and diffusion of charges
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits

150889 A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

1 a p-n junction
2 an intrinsic semiconductor
3 a p-type semiconductor
4 an n-type semiconductor
AIPMT- 1998
Semiconductor Electronics Material Devices and Simple Circuits

150876 Avalanche breakdown in a p-n junction diode is due to

1 sudden shift of Fermi level
2 increase in the width of forbidden gap
3 sudden increase of impurity concentration
4 cumulative effect of increase electron collision and creation of added electron hole pairs
AMU-2010
Semiconductor Electronics Material Devices and Simple Circuits

150879 The width of depletion region in p-n junction diode

1 Increases when a reverse bias voltage is applied
2 Increases when a forward bias voltage is applied
3 Decreases when a reverse bias voltage is applied
4 Remains the same, irrespective of the bias voltage
AMU-2006