150922 Consider a p-n junction as a capacitor, formed with \(p\) and \(n\)-materials acting as thin metal electrodes and depletion layer width acting as separation between them, Biasing on this, assume that a \(\mathbf{n - p}-\mathrm{n}\) transistor is working as an amplifier in \(C E\) configuration. If \(C_1\) and \(C_2\) are the base-emitter and collector-emitter junction capacitances, then
150922 Consider a p-n junction as a capacitor, formed with \(p\) and \(n\)-materials acting as thin metal electrodes and depletion layer width acting as separation between them, Biasing on this, assume that a \(\mathbf{n - p}-\mathrm{n}\) transistor is working as an amplifier in \(C E\) configuration. If \(C_1\) and \(C_2\) are the base-emitter and collector-emitter junction capacitances, then
150922 Consider a p-n junction as a capacitor, formed with \(p\) and \(n\)-materials acting as thin metal electrodes and depletion layer width acting as separation between them, Biasing on this, assume that a \(\mathbf{n - p}-\mathrm{n}\) transistor is working as an amplifier in \(C E\) configuration. If \(C_1\) and \(C_2\) are the base-emitter and collector-emitter junction capacitances, then
150922 Consider a p-n junction as a capacitor, formed with \(p\) and \(n\)-materials acting as thin metal electrodes and depletion layer width acting as separation between them, Biasing on this, assume that a \(\mathbf{n - p}-\mathrm{n}\) transistor is working as an amplifier in \(C E\) configuration. If \(C_1\) and \(C_2\) are the base-emitter and collector-emitter junction capacitances, then