Semiconductor Electronics Material Devices and Simple Circuits
150874
The curve between density (p) and distance (r) near a \(p-n\) junction in best represented by:
1
2
3
4
Explanation:
B In the depletion layer of p-n junction the charge density of positive ions exist in \(\mathrm{n}\)-side and charge density of negative ions exist in p-side.
AP EAMCET-23.08.2021
Semiconductor Electronics Material Devices and Simple Circuits
150916
An electrical device which offers a low resistance to the current in one direction but a high resistance to the current in opposite direction is
1 current amplifier
2 oscillator
3 power amplifier
4 rectifier
Explanation:
D An electrical device which offers a low resistance to the current in one direction but a high resistance of the current in opposite direction is rectifier which is used to convert \(\mathrm{AC}\) to \(\mathrm{DC}\), working on the principle that is allowed current to pass in one direction but not in other.
AP EAMCET(Medical)-2012
Semiconductor Electronics Material Devices and Simple Circuits
150918
The method of connecting the negative pole of battery to \(p\)-material and positive pole to \(n\) material of a \(p-n\) junction is called
1 forward bias connection
2 reverse bias connection
3 both (a) and (b)
4 Neither (a) nor (b)
Explanation:
B The method of connecting the negative pole of battery to p-material and positive pole to n-material of \(p-n\) junction is called reverse bias connection.
EAMCET-1993
Semiconductor Electronics Material Devices and Simple Circuits
150919
In forward bias in a p-n junction, the potential barrier
1 decreases
2 increases
3 remains unchanged
4 becomes zero
Explanation:
B In forward bias in a p-n junction, the potential barrier decreases because under forward biasing, the applied potential is opposite to the barrier potential.
EAMCET-1995
Semiconductor Electronics Material Devices and Simple Circuits
150920
In a reverse biased condition of a p-n junction
1 the potential barrier increases
2 the potential barrier decreases
3 the current flow increases
4 the potential barrier remains the same
Explanation:
B In a reverse biased condition of a p-n junction the potential barrier increases because when a battery voltage is applied to a p-n junction operating in reverse bias, then the applied external electric field supports the internal electric field of depletion layer. That is why the potential barrier increases.
Semiconductor Electronics Material Devices and Simple Circuits
150874
The curve between density (p) and distance (r) near a \(p-n\) junction in best represented by:
1
2
3
4
Explanation:
B In the depletion layer of p-n junction the charge density of positive ions exist in \(\mathrm{n}\)-side and charge density of negative ions exist in p-side.
AP EAMCET-23.08.2021
Semiconductor Electronics Material Devices and Simple Circuits
150916
An electrical device which offers a low resistance to the current in one direction but a high resistance to the current in opposite direction is
1 current amplifier
2 oscillator
3 power amplifier
4 rectifier
Explanation:
D An electrical device which offers a low resistance to the current in one direction but a high resistance of the current in opposite direction is rectifier which is used to convert \(\mathrm{AC}\) to \(\mathrm{DC}\), working on the principle that is allowed current to pass in one direction but not in other.
AP EAMCET(Medical)-2012
Semiconductor Electronics Material Devices and Simple Circuits
150918
The method of connecting the negative pole of battery to \(p\)-material and positive pole to \(n\) material of a \(p-n\) junction is called
1 forward bias connection
2 reverse bias connection
3 both (a) and (b)
4 Neither (a) nor (b)
Explanation:
B The method of connecting the negative pole of battery to p-material and positive pole to n-material of \(p-n\) junction is called reverse bias connection.
EAMCET-1993
Semiconductor Electronics Material Devices and Simple Circuits
150919
In forward bias in a p-n junction, the potential barrier
1 decreases
2 increases
3 remains unchanged
4 becomes zero
Explanation:
B In forward bias in a p-n junction, the potential barrier decreases because under forward biasing, the applied potential is opposite to the barrier potential.
EAMCET-1995
Semiconductor Electronics Material Devices and Simple Circuits
150920
In a reverse biased condition of a p-n junction
1 the potential barrier increases
2 the potential barrier decreases
3 the current flow increases
4 the potential barrier remains the same
Explanation:
B In a reverse biased condition of a p-n junction the potential barrier increases because when a battery voltage is applied to a p-n junction operating in reverse bias, then the applied external electric field supports the internal electric field of depletion layer. That is why the potential barrier increases.
Semiconductor Electronics Material Devices and Simple Circuits
150874
The curve between density (p) and distance (r) near a \(p-n\) junction in best represented by:
1
2
3
4
Explanation:
B In the depletion layer of p-n junction the charge density of positive ions exist in \(\mathrm{n}\)-side and charge density of negative ions exist in p-side.
AP EAMCET-23.08.2021
Semiconductor Electronics Material Devices and Simple Circuits
150916
An electrical device which offers a low resistance to the current in one direction but a high resistance to the current in opposite direction is
1 current amplifier
2 oscillator
3 power amplifier
4 rectifier
Explanation:
D An electrical device which offers a low resistance to the current in one direction but a high resistance of the current in opposite direction is rectifier which is used to convert \(\mathrm{AC}\) to \(\mathrm{DC}\), working on the principle that is allowed current to pass in one direction but not in other.
AP EAMCET(Medical)-2012
Semiconductor Electronics Material Devices and Simple Circuits
150918
The method of connecting the negative pole of battery to \(p\)-material and positive pole to \(n\) material of a \(p-n\) junction is called
1 forward bias connection
2 reverse bias connection
3 both (a) and (b)
4 Neither (a) nor (b)
Explanation:
B The method of connecting the negative pole of battery to p-material and positive pole to n-material of \(p-n\) junction is called reverse bias connection.
EAMCET-1993
Semiconductor Electronics Material Devices and Simple Circuits
150919
In forward bias in a p-n junction, the potential barrier
1 decreases
2 increases
3 remains unchanged
4 becomes zero
Explanation:
B In forward bias in a p-n junction, the potential barrier decreases because under forward biasing, the applied potential is opposite to the barrier potential.
EAMCET-1995
Semiconductor Electronics Material Devices and Simple Circuits
150920
In a reverse biased condition of a p-n junction
1 the potential barrier increases
2 the potential barrier decreases
3 the current flow increases
4 the potential barrier remains the same
Explanation:
B In a reverse biased condition of a p-n junction the potential barrier increases because when a battery voltage is applied to a p-n junction operating in reverse bias, then the applied external electric field supports the internal electric field of depletion layer. That is why the potential barrier increases.
Semiconductor Electronics Material Devices and Simple Circuits
150874
The curve between density (p) and distance (r) near a \(p-n\) junction in best represented by:
1
2
3
4
Explanation:
B In the depletion layer of p-n junction the charge density of positive ions exist in \(\mathrm{n}\)-side and charge density of negative ions exist in p-side.
AP EAMCET-23.08.2021
Semiconductor Electronics Material Devices and Simple Circuits
150916
An electrical device which offers a low resistance to the current in one direction but a high resistance to the current in opposite direction is
1 current amplifier
2 oscillator
3 power amplifier
4 rectifier
Explanation:
D An electrical device which offers a low resistance to the current in one direction but a high resistance of the current in opposite direction is rectifier which is used to convert \(\mathrm{AC}\) to \(\mathrm{DC}\), working on the principle that is allowed current to pass in one direction but not in other.
AP EAMCET(Medical)-2012
Semiconductor Electronics Material Devices and Simple Circuits
150918
The method of connecting the negative pole of battery to \(p\)-material and positive pole to \(n\) material of a \(p-n\) junction is called
1 forward bias connection
2 reverse bias connection
3 both (a) and (b)
4 Neither (a) nor (b)
Explanation:
B The method of connecting the negative pole of battery to p-material and positive pole to n-material of \(p-n\) junction is called reverse bias connection.
EAMCET-1993
Semiconductor Electronics Material Devices and Simple Circuits
150919
In forward bias in a p-n junction, the potential barrier
1 decreases
2 increases
3 remains unchanged
4 becomes zero
Explanation:
B In forward bias in a p-n junction, the potential barrier decreases because under forward biasing, the applied potential is opposite to the barrier potential.
EAMCET-1995
Semiconductor Electronics Material Devices and Simple Circuits
150920
In a reverse biased condition of a p-n junction
1 the potential barrier increases
2 the potential barrier decreases
3 the current flow increases
4 the potential barrier remains the same
Explanation:
B In a reverse biased condition of a p-n junction the potential barrier increases because when a battery voltage is applied to a p-n junction operating in reverse bias, then the applied external electric field supports the internal electric field of depletion layer. That is why the potential barrier increases.
Semiconductor Electronics Material Devices and Simple Circuits
150874
The curve between density (p) and distance (r) near a \(p-n\) junction in best represented by:
1
2
3
4
Explanation:
B In the depletion layer of p-n junction the charge density of positive ions exist in \(\mathrm{n}\)-side and charge density of negative ions exist in p-side.
AP EAMCET-23.08.2021
Semiconductor Electronics Material Devices and Simple Circuits
150916
An electrical device which offers a low resistance to the current in one direction but a high resistance to the current in opposite direction is
1 current amplifier
2 oscillator
3 power amplifier
4 rectifier
Explanation:
D An electrical device which offers a low resistance to the current in one direction but a high resistance of the current in opposite direction is rectifier which is used to convert \(\mathrm{AC}\) to \(\mathrm{DC}\), working on the principle that is allowed current to pass in one direction but not in other.
AP EAMCET(Medical)-2012
Semiconductor Electronics Material Devices and Simple Circuits
150918
The method of connecting the negative pole of battery to \(p\)-material and positive pole to \(n\) material of a \(p-n\) junction is called
1 forward bias connection
2 reverse bias connection
3 both (a) and (b)
4 Neither (a) nor (b)
Explanation:
B The method of connecting the negative pole of battery to p-material and positive pole to n-material of \(p-n\) junction is called reverse bias connection.
EAMCET-1993
Semiconductor Electronics Material Devices and Simple Circuits
150919
In forward bias in a p-n junction, the potential barrier
1 decreases
2 increases
3 remains unchanged
4 becomes zero
Explanation:
B In forward bias in a p-n junction, the potential barrier decreases because under forward biasing, the applied potential is opposite to the barrier potential.
EAMCET-1995
Semiconductor Electronics Material Devices and Simple Circuits
150920
In a reverse biased condition of a p-n junction
1 the potential barrier increases
2 the potential barrier decreases
3 the current flow increases
4 the potential barrier remains the same
Explanation:
B In a reverse biased condition of a p-n junction the potential barrier increases because when a battery voltage is applied to a p-n junction operating in reverse bias, then the applied external electric field supports the internal electric field of depletion layer. That is why the potential barrier increases.
