Semiconductor Electronics Material Devices and Simple Circuits
150914
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junction are
1 Drift in forward biased, diffusion in revese bias
2 Diffusion in forward biased, drift in reverse bias
3 Diffusion in both forward and reverse bias
4 Drift in both forward and reverse bias
Explanation:
B The dominant mechanism for motion of charges carriers in forward and reverse biased silicon p\(\mathrm{n}\) junction are diffusion in forward biased and drift in reverse bias.
CG PET-2021
Semiconductor Electronics Material Devices and Simple Circuits
150864
For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode:
1 It is two terminal device which conducts current in both directions.
2 It is two terminal device which conducts current in one direction only
3 It does not conduct current gives an initial deflection which decays to zero.
4 It is three terminal device which conducts current in one direction only between central terminal and either of the remaining to terminals.
Explanation:
B Diode is unidirectional device which conducts current in only one direction.
JEE Main-28.06.2022
Semiconductor Electronics Material Devices and Simple Circuits
150868
The avalanche break occurs at
1 higher reverse voltage
2 lower reverse voltage
3 lower forward voltage
4 higher forward voltage
Explanation:
B Avalanche break down occurs in diode when we apply high reverse voltage across diode which higher than Zener break down voltage. Thus avalanche breakdown occurs at higher reverse voltage
HP CET-2018
Semiconductor Electronics Material Devices and Simple Circuits
150870
The depletion layer of an unbiased \(p-n\) junction.
1 Has no charge carriers
2 Has only electrons
3 Has only holes
4 \(\mathrm{p}-\mathrm{n}\) junction has a weak electric field
Explanation:
B In an unbiased p-n function, there is no mobile charge in depletion region, so depletion layer acts like a barrier that opposes the flow of electrons, from \(\mathrm{n}\) side and holes from \(\mathrm{p}\)-side.
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Semiconductor Electronics Material Devices and Simple Circuits
150914
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junction are
1 Drift in forward biased, diffusion in revese bias
2 Diffusion in forward biased, drift in reverse bias
3 Diffusion in both forward and reverse bias
4 Drift in both forward and reverse bias
Explanation:
B The dominant mechanism for motion of charges carriers in forward and reverse biased silicon p\(\mathrm{n}\) junction are diffusion in forward biased and drift in reverse bias.
CG PET-2021
Semiconductor Electronics Material Devices and Simple Circuits
150864
For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode:
1 It is two terminal device which conducts current in both directions.
2 It is two terminal device which conducts current in one direction only
3 It does not conduct current gives an initial deflection which decays to zero.
4 It is three terminal device which conducts current in one direction only between central terminal and either of the remaining to terminals.
Explanation:
B Diode is unidirectional device which conducts current in only one direction.
JEE Main-28.06.2022
Semiconductor Electronics Material Devices and Simple Circuits
150868
The avalanche break occurs at
1 higher reverse voltage
2 lower reverse voltage
3 lower forward voltage
4 higher forward voltage
Explanation:
B Avalanche break down occurs in diode when we apply high reverse voltage across diode which higher than Zener break down voltage. Thus avalanche breakdown occurs at higher reverse voltage
HP CET-2018
Semiconductor Electronics Material Devices and Simple Circuits
150870
The depletion layer of an unbiased \(p-n\) junction.
1 Has no charge carriers
2 Has only electrons
3 Has only holes
4 \(\mathrm{p}-\mathrm{n}\) junction has a weak electric field
Explanation:
B In an unbiased p-n function, there is no mobile charge in depletion region, so depletion layer acts like a barrier that opposes the flow of electrons, from \(\mathrm{n}\) side and holes from \(\mathrm{p}\)-side.
Semiconductor Electronics Material Devices and Simple Circuits
150914
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junction are
1 Drift in forward biased, diffusion in revese bias
2 Diffusion in forward biased, drift in reverse bias
3 Diffusion in both forward and reverse bias
4 Drift in both forward and reverse bias
Explanation:
B The dominant mechanism for motion of charges carriers in forward and reverse biased silicon p\(\mathrm{n}\) junction are diffusion in forward biased and drift in reverse bias.
CG PET-2021
Semiconductor Electronics Material Devices and Simple Circuits
150864
For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode:
1 It is two terminal device which conducts current in both directions.
2 It is two terminal device which conducts current in one direction only
3 It does not conduct current gives an initial deflection which decays to zero.
4 It is three terminal device which conducts current in one direction only between central terminal and either of the remaining to terminals.
Explanation:
B Diode is unidirectional device which conducts current in only one direction.
JEE Main-28.06.2022
Semiconductor Electronics Material Devices and Simple Circuits
150868
The avalanche break occurs at
1 higher reverse voltage
2 lower reverse voltage
3 lower forward voltage
4 higher forward voltage
Explanation:
B Avalanche break down occurs in diode when we apply high reverse voltage across diode which higher than Zener break down voltage. Thus avalanche breakdown occurs at higher reverse voltage
HP CET-2018
Semiconductor Electronics Material Devices and Simple Circuits
150870
The depletion layer of an unbiased \(p-n\) junction.
1 Has no charge carriers
2 Has only electrons
3 Has only holes
4 \(\mathrm{p}-\mathrm{n}\) junction has a weak electric field
Explanation:
B In an unbiased p-n function, there is no mobile charge in depletion region, so depletion layer acts like a barrier that opposes the flow of electrons, from \(\mathrm{n}\) side and holes from \(\mathrm{p}\)-side.
Semiconductor Electronics Material Devices and Simple Circuits
150914
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junction are
1 Drift in forward biased, diffusion in revese bias
2 Diffusion in forward biased, drift in reverse bias
3 Diffusion in both forward and reverse bias
4 Drift in both forward and reverse bias
Explanation:
B The dominant mechanism for motion of charges carriers in forward and reverse biased silicon p\(\mathrm{n}\) junction are diffusion in forward biased and drift in reverse bias.
CG PET-2021
Semiconductor Electronics Material Devices and Simple Circuits
150864
For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode:
1 It is two terminal device which conducts current in both directions.
2 It is two terminal device which conducts current in one direction only
3 It does not conduct current gives an initial deflection which decays to zero.
4 It is three terminal device which conducts current in one direction only between central terminal and either of the remaining to terminals.
Explanation:
B Diode is unidirectional device which conducts current in only one direction.
JEE Main-28.06.2022
Semiconductor Electronics Material Devices and Simple Circuits
150868
The avalanche break occurs at
1 higher reverse voltage
2 lower reverse voltage
3 lower forward voltage
4 higher forward voltage
Explanation:
B Avalanche break down occurs in diode when we apply high reverse voltage across diode which higher than Zener break down voltage. Thus avalanche breakdown occurs at higher reverse voltage
HP CET-2018
Semiconductor Electronics Material Devices and Simple Circuits
150870
The depletion layer of an unbiased \(p-n\) junction.
1 Has no charge carriers
2 Has only electrons
3 Has only holes
4 \(\mathrm{p}-\mathrm{n}\) junction has a weak electric field
Explanation:
B In an unbiased p-n function, there is no mobile charge in depletion region, so depletion layer acts like a barrier that opposes the flow of electrons, from \(\mathrm{n}\) side and holes from \(\mathrm{p}\)-side.
