Semiconductor Electronics Material Devices and Simple Circuits
150913
The increase in the width of the depletion region in a p-n junction diode is due to
1 Reverse bias only
2 Both forward bias and reverse bias
3 Increase in forward current
4 Forward bias only
Explanation:
B The increase in the width of the depletion region in a p-n junction diode is due to reverse bias only. Therefore, it is clear that when a diode is forwardbiased, then the depletion layer width decreases, and the barrier height is reduced which will leads to the conduction of electrons through the junction. In the same way, when a diode is reverse biased, then the depletion layer width increases.
NEET--(Sep.) 2020
Semiconductor Electronics Material Devices and Simple Circuits
150857
On reverse biasing the p-n junction, its potential barrier becomes
1 narrow
2 broad
3 zero
4 constant
Explanation:
B In the case of reverse biasing potential barriers increases.
SRMJEEE - 2016
Semiconductor Electronics Material Devices and Simple Circuits
150858
When a p-n junction is reverse biased, then the current through the junction is mainly due to :
1 diffusion of charges
2 drift of charge
3 both drift and diffusion of charges
4 neither drift nor diffusion of charges
Explanation:
B When p-n junction is reverse bias, the current is decreases rapidly. Only a small amount of current passes through due to drifting of minority charge carriers.
MP PMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150859
Depletion layer at a p-n junction contains
1 mobile positive charges only
2 mobile negative charges only
3 immobile negative charges only
4 both positive and negative immobile charges
Explanation:
D In the depletion layer both positive \& negative charges are present in immobile condition.
Semiconductor Electronics Material Devices and Simple Circuits
150913
The increase in the width of the depletion region in a p-n junction diode is due to
1 Reverse bias only
2 Both forward bias and reverse bias
3 Increase in forward current
4 Forward bias only
Explanation:
B The increase in the width of the depletion region in a p-n junction diode is due to reverse bias only. Therefore, it is clear that when a diode is forwardbiased, then the depletion layer width decreases, and the barrier height is reduced which will leads to the conduction of electrons through the junction. In the same way, when a diode is reverse biased, then the depletion layer width increases.
NEET--(Sep.) 2020
Semiconductor Electronics Material Devices and Simple Circuits
150857
On reverse biasing the p-n junction, its potential barrier becomes
1 narrow
2 broad
3 zero
4 constant
Explanation:
B In the case of reverse biasing potential barriers increases.
SRMJEEE - 2016
Semiconductor Electronics Material Devices and Simple Circuits
150858
When a p-n junction is reverse biased, then the current through the junction is mainly due to :
1 diffusion of charges
2 drift of charge
3 both drift and diffusion of charges
4 neither drift nor diffusion of charges
Explanation:
B When p-n junction is reverse bias, the current is decreases rapidly. Only a small amount of current passes through due to drifting of minority charge carriers.
MP PMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150859
Depletion layer at a p-n junction contains
1 mobile positive charges only
2 mobile negative charges only
3 immobile negative charges only
4 both positive and negative immobile charges
Explanation:
D In the depletion layer both positive \& negative charges are present in immobile condition.
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Semiconductor Electronics Material Devices and Simple Circuits
150913
The increase in the width of the depletion region in a p-n junction diode is due to
1 Reverse bias only
2 Both forward bias and reverse bias
3 Increase in forward current
4 Forward bias only
Explanation:
B The increase in the width of the depletion region in a p-n junction diode is due to reverse bias only. Therefore, it is clear that when a diode is forwardbiased, then the depletion layer width decreases, and the barrier height is reduced which will leads to the conduction of electrons through the junction. In the same way, when a diode is reverse biased, then the depletion layer width increases.
NEET--(Sep.) 2020
Semiconductor Electronics Material Devices and Simple Circuits
150857
On reverse biasing the p-n junction, its potential barrier becomes
1 narrow
2 broad
3 zero
4 constant
Explanation:
B In the case of reverse biasing potential barriers increases.
SRMJEEE - 2016
Semiconductor Electronics Material Devices and Simple Circuits
150858
When a p-n junction is reverse biased, then the current through the junction is mainly due to :
1 diffusion of charges
2 drift of charge
3 both drift and diffusion of charges
4 neither drift nor diffusion of charges
Explanation:
B When p-n junction is reverse bias, the current is decreases rapidly. Only a small amount of current passes through due to drifting of minority charge carriers.
MP PMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150859
Depletion layer at a p-n junction contains
1 mobile positive charges only
2 mobile negative charges only
3 immobile negative charges only
4 both positive and negative immobile charges
Explanation:
D In the depletion layer both positive \& negative charges are present in immobile condition.
Semiconductor Electronics Material Devices and Simple Circuits
150913
The increase in the width of the depletion region in a p-n junction diode is due to
1 Reverse bias only
2 Both forward bias and reverse bias
3 Increase in forward current
4 Forward bias only
Explanation:
B The increase in the width of the depletion region in a p-n junction diode is due to reverse bias only. Therefore, it is clear that when a diode is forwardbiased, then the depletion layer width decreases, and the barrier height is reduced which will leads to the conduction of electrons through the junction. In the same way, when a diode is reverse biased, then the depletion layer width increases.
NEET--(Sep.) 2020
Semiconductor Electronics Material Devices and Simple Circuits
150857
On reverse biasing the p-n junction, its potential barrier becomes
1 narrow
2 broad
3 zero
4 constant
Explanation:
B In the case of reverse biasing potential barriers increases.
SRMJEEE - 2016
Semiconductor Electronics Material Devices and Simple Circuits
150858
When a p-n junction is reverse biased, then the current through the junction is mainly due to :
1 diffusion of charges
2 drift of charge
3 both drift and diffusion of charges
4 neither drift nor diffusion of charges
Explanation:
B When p-n junction is reverse bias, the current is decreases rapidly. Only a small amount of current passes through due to drifting of minority charge carriers.
MP PMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150859
Depletion layer at a p-n junction contains
1 mobile positive charges only
2 mobile negative charges only
3 immobile negative charges only
4 both positive and negative immobile charges
Explanation:
D In the depletion layer both positive \& negative charges are present in immobile condition.