Semiconductor Electronics Material Devices and Simple Circuits
150892
In forward bias the width of depletion layer in a p-n junction diode
1 Increases
2 Decreases
3 Remains constant
4 First increases then decreases
Explanation:
B The width of depletion region slowly starts decreasing at when a forward voltage applied to the terminals of diode. Because of forward bias the direction of applied voltage always be opposite to that of barrier potential. So, width of potential barrier decrease.
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits
150893
In which of the following figures, junction diode is forward biased?
1
2
3
4
Explanation:
B For forward biasing of diode, p - side of diode should be at higher potential than \(\mathrm{n}\) - side. If \(\mathrm{p}\) side of \(\mathrm{p}-\mathrm{n}\) junction diode is given more positive potential that \(\mathrm{n}\) - side, then it is forward biased.
AIPMT- 2000
Semiconductor Electronics Material Devices and Simple Circuits
150896
Barrier potential of a \(p-n\) junction diode does not depend on
1 Forward bias
2 Doping density
3 Diode design
4 Temperature
Explanation:
C Barriers potential depends upon temperature, doping density, and forward biasing while barriers potential does not depends on diode design.
AIPMT- 2003
Semiconductor Electronics Material Devices and Simple Circuits
150898
For conduction in a p-n junction, the biasing is
1 High potential on \(n\)-side and low potential on p-side
2 High potential on p-side and low potential on n-side
3 Same potential on both \(\mathrm{p}\) and \(\mathrm{n}\)-sides
4 Undetermined
Explanation:
B A p-n junction, the biasing is forward then pside should be connected to higher potential and n-side to lower potential.
Semiconductor Electronics Material Devices and Simple Circuits
150892
In forward bias the width of depletion layer in a p-n junction diode
1 Increases
2 Decreases
3 Remains constant
4 First increases then decreases
Explanation:
B The width of depletion region slowly starts decreasing at when a forward voltage applied to the terminals of diode. Because of forward bias the direction of applied voltage always be opposite to that of barrier potential. So, width of potential barrier decrease.
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits
150893
In which of the following figures, junction diode is forward biased?
1
2
3
4
Explanation:
B For forward biasing of diode, p - side of diode should be at higher potential than \(\mathrm{n}\) - side. If \(\mathrm{p}\) side of \(\mathrm{p}-\mathrm{n}\) junction diode is given more positive potential that \(\mathrm{n}\) - side, then it is forward biased.
AIPMT- 2000
Semiconductor Electronics Material Devices and Simple Circuits
150896
Barrier potential of a \(p-n\) junction diode does not depend on
1 Forward bias
2 Doping density
3 Diode design
4 Temperature
Explanation:
C Barriers potential depends upon temperature, doping density, and forward biasing while barriers potential does not depends on diode design.
AIPMT- 2003
Semiconductor Electronics Material Devices and Simple Circuits
150898
For conduction in a p-n junction, the biasing is
1 High potential on \(n\)-side and low potential on p-side
2 High potential on p-side and low potential on n-side
3 Same potential on both \(\mathrm{p}\) and \(\mathrm{n}\)-sides
4 Undetermined
Explanation:
B A p-n junction, the biasing is forward then pside should be connected to higher potential and n-side to lower potential.
Semiconductor Electronics Material Devices and Simple Circuits
150892
In forward bias the width of depletion layer in a p-n junction diode
1 Increases
2 Decreases
3 Remains constant
4 First increases then decreases
Explanation:
B The width of depletion region slowly starts decreasing at when a forward voltage applied to the terminals of diode. Because of forward bias the direction of applied voltage always be opposite to that of barrier potential. So, width of potential barrier decrease.
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits
150893
In which of the following figures, junction diode is forward biased?
1
2
3
4
Explanation:
B For forward biasing of diode, p - side of diode should be at higher potential than \(\mathrm{n}\) - side. If \(\mathrm{p}\) side of \(\mathrm{p}-\mathrm{n}\) junction diode is given more positive potential that \(\mathrm{n}\) - side, then it is forward biased.
AIPMT- 2000
Semiconductor Electronics Material Devices and Simple Circuits
150896
Barrier potential of a \(p-n\) junction diode does not depend on
1 Forward bias
2 Doping density
3 Diode design
4 Temperature
Explanation:
C Barriers potential depends upon temperature, doping density, and forward biasing while barriers potential does not depends on diode design.
AIPMT- 2003
Semiconductor Electronics Material Devices and Simple Circuits
150898
For conduction in a p-n junction, the biasing is
1 High potential on \(n\)-side and low potential on p-side
2 High potential on p-side and low potential on n-side
3 Same potential on both \(\mathrm{p}\) and \(\mathrm{n}\)-sides
4 Undetermined
Explanation:
B A p-n junction, the biasing is forward then pside should be connected to higher potential and n-side to lower potential.
Semiconductor Electronics Material Devices and Simple Circuits
150892
In forward bias the width of depletion layer in a p-n junction diode
1 Increases
2 Decreases
3 Remains constant
4 First increases then decreases
Explanation:
B The width of depletion region slowly starts decreasing at when a forward voltage applied to the terminals of diode. Because of forward bias the direction of applied voltage always be opposite to that of barrier potential. So, width of potential barrier decrease.
AIPMT- 1999
Semiconductor Electronics Material Devices and Simple Circuits
150893
In which of the following figures, junction diode is forward biased?
1
2
3
4
Explanation:
B For forward biasing of diode, p - side of diode should be at higher potential than \(\mathrm{n}\) - side. If \(\mathrm{p}\) side of \(\mathrm{p}-\mathrm{n}\) junction diode is given more positive potential that \(\mathrm{n}\) - side, then it is forward biased.
AIPMT- 2000
Semiconductor Electronics Material Devices and Simple Circuits
150896
Barrier potential of a \(p-n\) junction diode does not depend on
1 Forward bias
2 Doping density
3 Diode design
4 Temperature
Explanation:
C Barriers potential depends upon temperature, doping density, and forward biasing while barriers potential does not depends on diode design.
AIPMT- 2003
Semiconductor Electronics Material Devices and Simple Circuits
150898
For conduction in a p-n junction, the biasing is
1 High potential on \(n\)-side and low potential on p-side
2 High potential on p-side and low potential on n-side
3 Same potential on both \(\mathrm{p}\) and \(\mathrm{n}\)-sides
4 Undetermined
Explanation:
B A p-n junction, the biasing is forward then pside should be connected to higher potential and n-side to lower potential.
