Diode -(P-n Junction Diode Forward and Reverse Bias)
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Semiconductor Electronics Material Devices and Simple Circuits

150899 Application of a forward bias to a p-n junction

1 Increases the number of donors on the n-side
2 Increases the electric field in the depletion zone
3 Increases the potential difference across the depletion zone
4 Widens the depletion zone
AIPMT- 2005
Semiconductor Electronics Material Devices and Simple Circuits

150739 For a P-N junction diode

1 Forward current in \(\mathrm{mA}\) and reverse current is in \(\mu \mathrm{A}\)
2 Forward current is in \(\mu \mathrm{A}\) are reverse current is in \(\mathrm{mA}\)
3 Both forward and reverse currents are in \(\mu \mathrm{A}\)
4 Both forward and reverse currents are in \(\mathrm{mA}\)
5 No current flows in any direction
Kerala CEE - 2017
Semiconductor Electronics Material Devices and Simple Circuits

150701 A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?

1 Load resistance
2 A centre-tapped transformer
3 p-n junction diodes
4 capacitor
NEET (UG) 07.05.2023
Semiconductor Electronics Material Devices and Simple Circuits

150703 Given below are two statements: one is labelled as Assertion \(A\) and the other is labelled as Reason \(\mathbf{R}\)
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below

1 Both A and R are correct and R is the correct explanation of \(\mathrm{A}\)
2 Both \(\mathrm{A}\) and \(\mathrm{R}\) are correct but \(\mathrm{R}\) is NOT the correct explanation of \(\mathrm{A}\)
3 \(\mathrm{A}\) is correct but \(\mathrm{R}\) is not correct
4 \(\mathrm{A}\) is not correct but \(\mathrm{R}\) is correct
JEE Main-06.04.2023
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Semiconductor Electronics Material Devices and Simple Circuits

150899 Application of a forward bias to a p-n junction

1 Increases the number of donors on the n-side
2 Increases the electric field in the depletion zone
3 Increases the potential difference across the depletion zone
4 Widens the depletion zone
AIPMT- 2005
Semiconductor Electronics Material Devices and Simple Circuits

150739 For a P-N junction diode

1 Forward current in \(\mathrm{mA}\) and reverse current is in \(\mu \mathrm{A}\)
2 Forward current is in \(\mu \mathrm{A}\) are reverse current is in \(\mathrm{mA}\)
3 Both forward and reverse currents are in \(\mu \mathrm{A}\)
4 Both forward and reverse currents are in \(\mathrm{mA}\)
5 No current flows in any direction
Kerala CEE - 2017
Semiconductor Electronics Material Devices and Simple Circuits

150701 A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?

1 Load resistance
2 A centre-tapped transformer
3 p-n junction diodes
4 capacitor
NEET (UG) 07.05.2023
Semiconductor Electronics Material Devices and Simple Circuits

150703 Given below are two statements: one is labelled as Assertion \(A\) and the other is labelled as Reason \(\mathbf{R}\)
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below

1 Both A and R are correct and R is the correct explanation of \(\mathrm{A}\)
2 Both \(\mathrm{A}\) and \(\mathrm{R}\) are correct but \(\mathrm{R}\) is NOT the correct explanation of \(\mathrm{A}\)
3 \(\mathrm{A}\) is correct but \(\mathrm{R}\) is not correct
4 \(\mathrm{A}\) is not correct but \(\mathrm{R}\) is correct
JEE Main-06.04.2023
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Semiconductor Electronics Material Devices and Simple Circuits

150899 Application of a forward bias to a p-n junction

1 Increases the number of donors on the n-side
2 Increases the electric field in the depletion zone
3 Increases the potential difference across the depletion zone
4 Widens the depletion zone
AIPMT- 2005
Semiconductor Electronics Material Devices and Simple Circuits

150739 For a P-N junction diode

1 Forward current in \(\mathrm{mA}\) and reverse current is in \(\mu \mathrm{A}\)
2 Forward current is in \(\mu \mathrm{A}\) are reverse current is in \(\mathrm{mA}\)
3 Both forward and reverse currents are in \(\mu \mathrm{A}\)
4 Both forward and reverse currents are in \(\mathrm{mA}\)
5 No current flows in any direction
Kerala CEE - 2017
Semiconductor Electronics Material Devices and Simple Circuits

150701 A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?

1 Load resistance
2 A centre-tapped transformer
3 p-n junction diodes
4 capacitor
NEET (UG) 07.05.2023
Semiconductor Electronics Material Devices and Simple Circuits

150703 Given below are two statements: one is labelled as Assertion \(A\) and the other is labelled as Reason \(\mathbf{R}\)
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below

1 Both A and R are correct and R is the correct explanation of \(\mathrm{A}\)
2 Both \(\mathrm{A}\) and \(\mathrm{R}\) are correct but \(\mathrm{R}\) is NOT the correct explanation of \(\mathrm{A}\)
3 \(\mathrm{A}\) is correct but \(\mathrm{R}\) is not correct
4 \(\mathrm{A}\) is not correct but \(\mathrm{R}\) is correct
JEE Main-06.04.2023
Join With Us for More Updates
Semiconductor Electronics Material Devices and Simple Circuits

150899 Application of a forward bias to a p-n junction

1 Increases the number of donors on the n-side
2 Increases the electric field in the depletion zone
3 Increases the potential difference across the depletion zone
4 Widens the depletion zone
AIPMT- 2005
Semiconductor Electronics Material Devices and Simple Circuits

150739 For a P-N junction diode

1 Forward current in \(\mathrm{mA}\) and reverse current is in \(\mu \mathrm{A}\)
2 Forward current is in \(\mu \mathrm{A}\) are reverse current is in \(\mathrm{mA}\)
3 Both forward and reverse currents are in \(\mu \mathrm{A}\)
4 Both forward and reverse currents are in \(\mathrm{mA}\)
5 No current flows in any direction
Kerala CEE - 2017
Semiconductor Electronics Material Devices and Simple Circuits

150701 A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?

1 Load resistance
2 A centre-tapped transformer
3 p-n junction diodes
4 capacitor
NEET (UG) 07.05.2023
Semiconductor Electronics Material Devices and Simple Circuits

150703 Given below are two statements: one is labelled as Assertion \(A\) and the other is labelled as Reason \(\mathbf{R}\)
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below

1 Both A and R are correct and R is the correct explanation of \(\mathrm{A}\)
2 Both \(\mathrm{A}\) and \(\mathrm{R}\) are correct but \(\mathrm{R}\) is NOT the correct explanation of \(\mathrm{A}\)
3 \(\mathrm{A}\) is correct but \(\mathrm{R}\) is not correct
4 \(\mathrm{A}\) is not correct but \(\mathrm{R}\) is correct
JEE Main-06.04.2023
For More Updates join with Us
NEET Test Series from KOTA - 10 Papers In MS WORD WhatsApp Here