Semiconductor Electronics Material Devices and Simple Circuits
150706
A semiconductor diode rectifier
1 converts D.C. into A.C.
2 converts A.C. into D.C.
3 amplifies A.C. signals
4 amplifies D.C. signals
Explanation:
B A semiconductor diode rectifier is an electrical device that converts alternating current (AC) into direct current (DC).
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150714
If no external voltage is applied across \(p-n\) junction, there would be
1 no electric field across the junction
2 an electric field pointing from n-type to ptype side across the junction
3 an electric field pointing from p-type to ntype side across the junction
4 a temporary electric field during formation of p-n junction that would subsequently disappear
Explanation:
B In p-n junction a potential barrier is developed whose direction is from \(\mathrm{n}\) region to \(\mathrm{p}\) region. Hence, even no external voltage is applied across p-n junction there would be an electric field pointing from n-type to \(p\) type side across the junction.
Manipal UGET-2019
Semiconductor Electronics Material Devices and Simple Circuits
150715
For PN junction, the width of space charge region is approximately \(\mu \mathrm{m}\)
1 0.5
2 6
3 5
4 0.05
Explanation:
B For PN junction, the width of space charge region is approximately \(0.5 \mu \mathrm{m}\).
GUJCET 2019
Semiconductor Electronics Material Devices and Simple Circuits
150721
In n- type silicon, which of the following statements is true?
1 Electrons are majority carriers and trivalent atoms
2 Electrons are minority carriers and pentavalent atoms are the dopants.
3 Holes are minority carriers and pentavalent atoms are the dopants.
4 Holes are majority carriers and trivalent atoms are the dopants.
Explanation:
C In an n-type silicon electrons are majority carrier and hole are minority carriers and pentavalent atoms are dopant to make n-type semiconductor.
CG PET- 2017
Semiconductor Electronics Material Devices and Simple Circuits
150722
When a semiconductor device is connected to a battery through a resistance, some current flows through it. Now, if the battery is reversed, the current becomes almost zero the device may be
1 pure semiconductor
2 p-n junction
3 p-type semiconductor
4 n-type semiconductor
Explanation:
B In p-n junction device the current only in forward biasing. If the current in reverse biased then the current reduce to zero. Now if the battery is reversed then p-n junction becomes reversed biased so there is zero current in the circuit
Semiconductor Electronics Material Devices and Simple Circuits
150706
A semiconductor diode rectifier
1 converts D.C. into A.C.
2 converts A.C. into D.C.
3 amplifies A.C. signals
4 amplifies D.C. signals
Explanation:
B A semiconductor diode rectifier is an electrical device that converts alternating current (AC) into direct current (DC).
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150714
If no external voltage is applied across \(p-n\) junction, there would be
1 no electric field across the junction
2 an electric field pointing from n-type to ptype side across the junction
3 an electric field pointing from p-type to ntype side across the junction
4 a temporary electric field during formation of p-n junction that would subsequently disappear
Explanation:
B In p-n junction a potential barrier is developed whose direction is from \(\mathrm{n}\) region to \(\mathrm{p}\) region. Hence, even no external voltage is applied across p-n junction there would be an electric field pointing from n-type to \(p\) type side across the junction.
Manipal UGET-2019
Semiconductor Electronics Material Devices and Simple Circuits
150715
For PN junction, the width of space charge region is approximately \(\mu \mathrm{m}\)
1 0.5
2 6
3 5
4 0.05
Explanation:
B For PN junction, the width of space charge region is approximately \(0.5 \mu \mathrm{m}\).
GUJCET 2019
Semiconductor Electronics Material Devices and Simple Circuits
150721
In n- type silicon, which of the following statements is true?
1 Electrons are majority carriers and trivalent atoms
2 Electrons are minority carriers and pentavalent atoms are the dopants.
3 Holes are minority carriers and pentavalent atoms are the dopants.
4 Holes are majority carriers and trivalent atoms are the dopants.
Explanation:
C In an n-type silicon electrons are majority carrier and hole are minority carriers and pentavalent atoms are dopant to make n-type semiconductor.
CG PET- 2017
Semiconductor Electronics Material Devices and Simple Circuits
150722
When a semiconductor device is connected to a battery through a resistance, some current flows through it. Now, if the battery is reversed, the current becomes almost zero the device may be
1 pure semiconductor
2 p-n junction
3 p-type semiconductor
4 n-type semiconductor
Explanation:
B In p-n junction device the current only in forward biasing. If the current in reverse biased then the current reduce to zero. Now if the battery is reversed then p-n junction becomes reversed biased so there is zero current in the circuit
Semiconductor Electronics Material Devices and Simple Circuits
150706
A semiconductor diode rectifier
1 converts D.C. into A.C.
2 converts A.C. into D.C.
3 amplifies A.C. signals
4 amplifies D.C. signals
Explanation:
B A semiconductor diode rectifier is an electrical device that converts alternating current (AC) into direct current (DC).
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150714
If no external voltage is applied across \(p-n\) junction, there would be
1 no electric field across the junction
2 an electric field pointing from n-type to ptype side across the junction
3 an electric field pointing from p-type to ntype side across the junction
4 a temporary electric field during formation of p-n junction that would subsequently disappear
Explanation:
B In p-n junction a potential barrier is developed whose direction is from \(\mathrm{n}\) region to \(\mathrm{p}\) region. Hence, even no external voltage is applied across p-n junction there would be an electric field pointing from n-type to \(p\) type side across the junction.
Manipal UGET-2019
Semiconductor Electronics Material Devices and Simple Circuits
150715
For PN junction, the width of space charge region is approximately \(\mu \mathrm{m}\)
1 0.5
2 6
3 5
4 0.05
Explanation:
B For PN junction, the width of space charge region is approximately \(0.5 \mu \mathrm{m}\).
GUJCET 2019
Semiconductor Electronics Material Devices and Simple Circuits
150721
In n- type silicon, which of the following statements is true?
1 Electrons are majority carriers and trivalent atoms
2 Electrons are minority carriers and pentavalent atoms are the dopants.
3 Holes are minority carriers and pentavalent atoms are the dopants.
4 Holes are majority carriers and trivalent atoms are the dopants.
Explanation:
C In an n-type silicon electrons are majority carrier and hole are minority carriers and pentavalent atoms are dopant to make n-type semiconductor.
CG PET- 2017
Semiconductor Electronics Material Devices and Simple Circuits
150722
When a semiconductor device is connected to a battery through a resistance, some current flows through it. Now, if the battery is reversed, the current becomes almost zero the device may be
1 pure semiconductor
2 p-n junction
3 p-type semiconductor
4 n-type semiconductor
Explanation:
B In p-n junction device the current only in forward biasing. If the current in reverse biased then the current reduce to zero. Now if the battery is reversed then p-n junction becomes reversed biased so there is zero current in the circuit
Semiconductor Electronics Material Devices and Simple Circuits
150706
A semiconductor diode rectifier
1 converts D.C. into A.C.
2 converts A.C. into D.C.
3 amplifies A.C. signals
4 amplifies D.C. signals
Explanation:
B A semiconductor diode rectifier is an electrical device that converts alternating current (AC) into direct current (DC).
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150714
If no external voltage is applied across \(p-n\) junction, there would be
1 no electric field across the junction
2 an electric field pointing from n-type to ptype side across the junction
3 an electric field pointing from p-type to ntype side across the junction
4 a temporary electric field during formation of p-n junction that would subsequently disappear
Explanation:
B In p-n junction a potential barrier is developed whose direction is from \(\mathrm{n}\) region to \(\mathrm{p}\) region. Hence, even no external voltage is applied across p-n junction there would be an electric field pointing from n-type to \(p\) type side across the junction.
Manipal UGET-2019
Semiconductor Electronics Material Devices and Simple Circuits
150715
For PN junction, the width of space charge region is approximately \(\mu \mathrm{m}\)
1 0.5
2 6
3 5
4 0.05
Explanation:
B For PN junction, the width of space charge region is approximately \(0.5 \mu \mathrm{m}\).
GUJCET 2019
Semiconductor Electronics Material Devices and Simple Circuits
150721
In n- type silicon, which of the following statements is true?
1 Electrons are majority carriers and trivalent atoms
2 Electrons are minority carriers and pentavalent atoms are the dopants.
3 Holes are minority carriers and pentavalent atoms are the dopants.
4 Holes are majority carriers and trivalent atoms are the dopants.
Explanation:
C In an n-type silicon electrons are majority carrier and hole are minority carriers and pentavalent atoms are dopant to make n-type semiconductor.
CG PET- 2017
Semiconductor Electronics Material Devices and Simple Circuits
150722
When a semiconductor device is connected to a battery through a resistance, some current flows through it. Now, if the battery is reversed, the current becomes almost zero the device may be
1 pure semiconductor
2 p-n junction
3 p-type semiconductor
4 n-type semiconductor
Explanation:
B In p-n junction device the current only in forward biasing. If the current in reverse biased then the current reduce to zero. Now if the battery is reversed then p-n junction becomes reversed biased so there is zero current in the circuit
Semiconductor Electronics Material Devices and Simple Circuits
150706
A semiconductor diode rectifier
1 converts D.C. into A.C.
2 converts A.C. into D.C.
3 amplifies A.C. signals
4 amplifies D.C. signals
Explanation:
B A semiconductor diode rectifier is an electrical device that converts alternating current (AC) into direct current (DC).
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150714
If no external voltage is applied across \(p-n\) junction, there would be
1 no electric field across the junction
2 an electric field pointing from n-type to ptype side across the junction
3 an electric field pointing from p-type to ntype side across the junction
4 a temporary electric field during formation of p-n junction that would subsequently disappear
Explanation:
B In p-n junction a potential barrier is developed whose direction is from \(\mathrm{n}\) region to \(\mathrm{p}\) region. Hence, even no external voltage is applied across p-n junction there would be an electric field pointing from n-type to \(p\) type side across the junction.
Manipal UGET-2019
Semiconductor Electronics Material Devices and Simple Circuits
150715
For PN junction, the width of space charge region is approximately \(\mu \mathrm{m}\)
1 0.5
2 6
3 5
4 0.05
Explanation:
B For PN junction, the width of space charge region is approximately \(0.5 \mu \mathrm{m}\).
GUJCET 2019
Semiconductor Electronics Material Devices and Simple Circuits
150721
In n- type silicon, which of the following statements is true?
1 Electrons are majority carriers and trivalent atoms
2 Electrons are minority carriers and pentavalent atoms are the dopants.
3 Holes are minority carriers and pentavalent atoms are the dopants.
4 Holes are majority carriers and trivalent atoms are the dopants.
Explanation:
C In an n-type silicon electrons are majority carrier and hole are minority carriers and pentavalent atoms are dopant to make n-type semiconductor.
CG PET- 2017
Semiconductor Electronics Material Devices and Simple Circuits
150722
When a semiconductor device is connected to a battery through a resistance, some current flows through it. Now, if the battery is reversed, the current becomes almost zero the device may be
1 pure semiconductor
2 p-n junction
3 p-type semiconductor
4 n-type semiconductor
Explanation:
B In p-n junction device the current only in forward biasing. If the current in reverse biased then the current reduce to zero. Now if the battery is reversed then p-n junction becomes reversed biased so there is zero current in the circuit
