Semiconductor Electronics Material Devices and Simple Circuits
150723
Diffusion current in a p-n junction is greater than the drift current in magnitude, it the junction is
1 reverse biased
2 unbiased
3 forward biased
4 None of the above
Explanation:
C The barrier potential is reduced by the forward biased applied voltage and hence more holes diffuse on the \(\mathrm{n}\)-side and more electrons diffuse on the p-side. The diffusion current is greater to drift current and hence the net current is in the direction of diffusion current.
CG PET -2016
Semiconductor Electronics Material Devices and Simple Circuits
150725
Reverse bias applied to a junction diode
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B When reverse biased applied to a junction diode then rises the potential barrier, because electron and hold move toward battery terminal.
CG PET- 2013
Semiconductor Electronics Material Devices and Simple Circuits
150727
Name of a p-n junction, which can be used as the regulator, is
1 zener diode
2 tunnel diode
3 gunn diode
4 None of these
Explanation:
B Zener diode has a relatively constant voltage across it, regardless of the value of current through the device. This permits the zener diode to be used as a voltage regulator.
CG PET- 2009
Semiconductor Electronics Material Devices and Simple Circuits
150728
Name of a p-n junction, which can be used as the switch, is
1 zener diode
2 tunnel diode
3 gunn diode
4 None of these
Explanation:
B Tunnel diode when operated in the negative resistance region can be used as an oscillator or a switch.
Semiconductor Electronics Material Devices and Simple Circuits
150723
Diffusion current in a p-n junction is greater than the drift current in magnitude, it the junction is
1 reverse biased
2 unbiased
3 forward biased
4 None of the above
Explanation:
C The barrier potential is reduced by the forward biased applied voltage and hence more holes diffuse on the \(\mathrm{n}\)-side and more electrons diffuse on the p-side. The diffusion current is greater to drift current and hence the net current is in the direction of diffusion current.
CG PET -2016
Semiconductor Electronics Material Devices and Simple Circuits
150725
Reverse bias applied to a junction diode
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B When reverse biased applied to a junction diode then rises the potential barrier, because electron and hold move toward battery terminal.
CG PET- 2013
Semiconductor Electronics Material Devices and Simple Circuits
150727
Name of a p-n junction, which can be used as the regulator, is
1 zener diode
2 tunnel diode
3 gunn diode
4 None of these
Explanation:
B Zener diode has a relatively constant voltage across it, regardless of the value of current through the device. This permits the zener diode to be used as a voltage regulator.
CG PET- 2009
Semiconductor Electronics Material Devices and Simple Circuits
150728
Name of a p-n junction, which can be used as the switch, is
1 zener diode
2 tunnel diode
3 gunn diode
4 None of these
Explanation:
B Tunnel diode when operated in the negative resistance region can be used as an oscillator or a switch.
Semiconductor Electronics Material Devices and Simple Circuits
150723
Diffusion current in a p-n junction is greater than the drift current in magnitude, it the junction is
1 reverse biased
2 unbiased
3 forward biased
4 None of the above
Explanation:
C The barrier potential is reduced by the forward biased applied voltage and hence more holes diffuse on the \(\mathrm{n}\)-side and more electrons diffuse on the p-side. The diffusion current is greater to drift current and hence the net current is in the direction of diffusion current.
CG PET -2016
Semiconductor Electronics Material Devices and Simple Circuits
150725
Reverse bias applied to a junction diode
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B When reverse biased applied to a junction diode then rises the potential barrier, because electron and hold move toward battery terminal.
CG PET- 2013
Semiconductor Electronics Material Devices and Simple Circuits
150727
Name of a p-n junction, which can be used as the regulator, is
1 zener diode
2 tunnel diode
3 gunn diode
4 None of these
Explanation:
B Zener diode has a relatively constant voltage across it, regardless of the value of current through the device. This permits the zener diode to be used as a voltage regulator.
CG PET- 2009
Semiconductor Electronics Material Devices and Simple Circuits
150728
Name of a p-n junction, which can be used as the switch, is
1 zener diode
2 tunnel diode
3 gunn diode
4 None of these
Explanation:
B Tunnel diode when operated in the negative resistance region can be used as an oscillator or a switch.
Semiconductor Electronics Material Devices and Simple Circuits
150723
Diffusion current in a p-n junction is greater than the drift current in magnitude, it the junction is
1 reverse biased
2 unbiased
3 forward biased
4 None of the above
Explanation:
C The barrier potential is reduced by the forward biased applied voltage and hence more holes diffuse on the \(\mathrm{n}\)-side and more electrons diffuse on the p-side. The diffusion current is greater to drift current and hence the net current is in the direction of diffusion current.
CG PET -2016
Semiconductor Electronics Material Devices and Simple Circuits
150725
Reverse bias applied to a junction diode
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B When reverse biased applied to a junction diode then rises the potential barrier, because electron and hold move toward battery terminal.
CG PET- 2013
Semiconductor Electronics Material Devices and Simple Circuits
150727
Name of a p-n junction, which can be used as the regulator, is
1 zener diode
2 tunnel diode
3 gunn diode
4 None of these
Explanation:
B Zener diode has a relatively constant voltage across it, regardless of the value of current through the device. This permits the zener diode to be used as a voltage regulator.
CG PET- 2009
Semiconductor Electronics Material Devices and Simple Circuits
150728
Name of a p-n junction, which can be used as the switch, is
1 zener diode
2 tunnel diode
3 gunn diode
4 None of these
Explanation:
B Tunnel diode when operated in the negative resistance region can be used as an oscillator or a switch.
