Semiconductor Electronics Material Devices and Simple Circuits
150881
If the forward bias voltage in a diode is increased the length of depletion region would
1 decrease
2 increase
3 no change
4 first increase and then decrease
Explanation:
B Width of depletion Region of p-n junction is increases with reverse bias and decreases with forward bias voltage. Because in forward biasing diffusion of electrons and holes in to depletion layers decreases its width.
AMU-2003
Semiconductor Electronics Material Devices and Simple Circuits
150882
In a full wave rectifier, the rms value of \(\mathrm{AC}\) component of the waves
1 equal to \(\mathrm{DC}\) value
2 more than \(\mathrm{DC}\) value
3 less than \(\mathrm{DC}\) value
4 zero
Explanation:
C In a full wave rectifier the value of DC component in output voltage is more than that of \(\mathrm{AC}\) component. However, in a half wave rectifier, the value of DC component in output voltage is less than the \(\mathrm{AC}\) component obviously the rms value of \(\mathrm{AC}\) component of the waves is less than DC component value.
AMU-2002
Semiconductor Electronics Material Devices and Simple Circuits
150883
An oscillator is nothing but an amplifier with
1 Positive feedback
2 Negative feedback
3 Large gain
4 No feedback
Explanation:
B The oscillator is nothing but an amplifier with positive feedback. Positive feedback is also known as regenerative feedback because system sustains or regenerates itself without any input source.
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits
150885
\(p\)-n junction is said to be forward biased, when
1 The positive pole of the battery is joined to the p-semiconductor and negative pole to the n-semiconductor
2 The positive pole of the battery is joined to the n-semiconductor and negative pole to the p-semiconductor
3 The positive pole of the battery is connected \(\mathrm{n}\)-semiconductor and p-semiconductor
4 A mechanical force is applied in the forward direction
Explanation:
B \(\mathrm{p}-\mathrm{n}\) junction, for forward biased when the positive terminal of external battery is to be connected to p-semiconductor and negative terminal of battery to the n-semiconductor.
Semiconductor Electronics Material Devices and Simple Circuits
150881
If the forward bias voltage in a diode is increased the length of depletion region would
1 decrease
2 increase
3 no change
4 first increase and then decrease
Explanation:
B Width of depletion Region of p-n junction is increases with reverse bias and decreases with forward bias voltage. Because in forward biasing diffusion of electrons and holes in to depletion layers decreases its width.
AMU-2003
Semiconductor Electronics Material Devices and Simple Circuits
150882
In a full wave rectifier, the rms value of \(\mathrm{AC}\) component of the waves
1 equal to \(\mathrm{DC}\) value
2 more than \(\mathrm{DC}\) value
3 less than \(\mathrm{DC}\) value
4 zero
Explanation:
C In a full wave rectifier the value of DC component in output voltage is more than that of \(\mathrm{AC}\) component. However, in a half wave rectifier, the value of DC component in output voltage is less than the \(\mathrm{AC}\) component obviously the rms value of \(\mathrm{AC}\) component of the waves is less than DC component value.
AMU-2002
Semiconductor Electronics Material Devices and Simple Circuits
150883
An oscillator is nothing but an amplifier with
1 Positive feedback
2 Negative feedback
3 Large gain
4 No feedback
Explanation:
B The oscillator is nothing but an amplifier with positive feedback. Positive feedback is also known as regenerative feedback because system sustains or regenerates itself without any input source.
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits
150885
\(p\)-n junction is said to be forward biased, when
1 The positive pole of the battery is joined to the p-semiconductor and negative pole to the n-semiconductor
2 The positive pole of the battery is joined to the n-semiconductor and negative pole to the p-semiconductor
3 The positive pole of the battery is connected \(\mathrm{n}\)-semiconductor and p-semiconductor
4 A mechanical force is applied in the forward direction
Explanation:
B \(\mathrm{p}-\mathrm{n}\) junction, for forward biased when the positive terminal of external battery is to be connected to p-semiconductor and negative terminal of battery to the n-semiconductor.
Semiconductor Electronics Material Devices and Simple Circuits
150881
If the forward bias voltage in a diode is increased the length of depletion region would
1 decrease
2 increase
3 no change
4 first increase and then decrease
Explanation:
B Width of depletion Region of p-n junction is increases with reverse bias and decreases with forward bias voltage. Because in forward biasing diffusion of electrons and holes in to depletion layers decreases its width.
AMU-2003
Semiconductor Electronics Material Devices and Simple Circuits
150882
In a full wave rectifier, the rms value of \(\mathrm{AC}\) component of the waves
1 equal to \(\mathrm{DC}\) value
2 more than \(\mathrm{DC}\) value
3 less than \(\mathrm{DC}\) value
4 zero
Explanation:
C In a full wave rectifier the value of DC component in output voltage is more than that of \(\mathrm{AC}\) component. However, in a half wave rectifier, the value of DC component in output voltage is less than the \(\mathrm{AC}\) component obviously the rms value of \(\mathrm{AC}\) component of the waves is less than DC component value.
AMU-2002
Semiconductor Electronics Material Devices and Simple Circuits
150883
An oscillator is nothing but an amplifier with
1 Positive feedback
2 Negative feedback
3 Large gain
4 No feedback
Explanation:
B The oscillator is nothing but an amplifier with positive feedback. Positive feedback is also known as regenerative feedback because system sustains or regenerates itself without any input source.
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits
150885
\(p\)-n junction is said to be forward biased, when
1 The positive pole of the battery is joined to the p-semiconductor and negative pole to the n-semiconductor
2 The positive pole of the battery is joined to the n-semiconductor and negative pole to the p-semiconductor
3 The positive pole of the battery is connected \(\mathrm{n}\)-semiconductor and p-semiconductor
4 A mechanical force is applied in the forward direction
Explanation:
B \(\mathrm{p}-\mathrm{n}\) junction, for forward biased when the positive terminal of external battery is to be connected to p-semiconductor and negative terminal of battery to the n-semiconductor.
Semiconductor Electronics Material Devices and Simple Circuits
150881
If the forward bias voltage in a diode is increased the length of depletion region would
1 decrease
2 increase
3 no change
4 first increase and then decrease
Explanation:
B Width of depletion Region of p-n junction is increases with reverse bias and decreases with forward bias voltage. Because in forward biasing diffusion of electrons and holes in to depletion layers decreases its width.
AMU-2003
Semiconductor Electronics Material Devices and Simple Circuits
150882
In a full wave rectifier, the rms value of \(\mathrm{AC}\) component of the waves
1 equal to \(\mathrm{DC}\) value
2 more than \(\mathrm{DC}\) value
3 less than \(\mathrm{DC}\) value
4 zero
Explanation:
C In a full wave rectifier the value of DC component in output voltage is more than that of \(\mathrm{AC}\) component. However, in a half wave rectifier, the value of DC component in output voltage is less than the \(\mathrm{AC}\) component obviously the rms value of \(\mathrm{AC}\) component of the waves is less than DC component value.
AMU-2002
Semiconductor Electronics Material Devices and Simple Circuits
150883
An oscillator is nothing but an amplifier with
1 Positive feedback
2 Negative feedback
3 Large gain
4 No feedback
Explanation:
B The oscillator is nothing but an amplifier with positive feedback. Positive feedback is also known as regenerative feedback because system sustains or regenerates itself without any input source.
AIPMT- 1994
Semiconductor Electronics Material Devices and Simple Circuits
150885
\(p\)-n junction is said to be forward biased, when
1 The positive pole of the battery is joined to the p-semiconductor and negative pole to the n-semiconductor
2 The positive pole of the battery is joined to the n-semiconductor and negative pole to the p-semiconductor
3 The positive pole of the battery is connected \(\mathrm{n}\)-semiconductor and p-semiconductor
4 A mechanical force is applied in the forward direction
Explanation:
B \(\mathrm{p}-\mathrm{n}\) junction, for forward biased when the positive terminal of external battery is to be connected to p-semiconductor and negative terminal of battery to the n-semiconductor.
