NEET Test Series from KOTA - 10 Papers In MS WORD
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Semiconductor Electronics Material Devices and Simple Circuits
150905
In a p-n junction diode, change in temperature due to heating
1 does not affect resistance of \(p-n\) junction
2 affects only forward resistance
3 affects only reverse resistance
4 affects the overall V-I characteristics of p-n junction
Explanation:
D As we know that due to heating, the number of electron-hole pairs will increase. Therefore, overall resistance of diode will change and this is the reason where both forward biasing and reversed biasing are changed.
NEET- 2018
Semiconductor Electronics Material Devices and Simple Circuits
150911
The barrier potential of a p-n junction depends on (i) type of semiconductor material (ii) amount of doping (iii) temperature Which one of the following is correct?
1 (i) and (ii) only
2 (ii) only
3 (ii) and (iii) only
4 (i), (ii) and (iii)
Explanation:
D The barrier potential of a p-n junction depends on type of semiconductor material, amount of doping and temperature. Hence, all the given statements are correct.
AIPMT- 2014
Semiconductor Electronics Material Devices and Simple Circuits
150912
Out of the following which one is a forward biased diode?
1
2
3
4
Explanation:
D In forward bias p-side have + ve terminal and \(\mathrm{n}\)-side -ve terminal voltage respectively Higher to lower potential. So, by option (d), \(0 \mathrm{~V}\) is p-side with \(+\mathrm{ve}\) terminal and \(-3 \mathrm{~V}\) which is \(\mathrm{n}\)-side with \(-\mathrm{ve}\) terminal they represent forward bias.
NEET-- (Oct.) 2020
Semiconductor Electronics Material Devices and Simple Circuits
150854
In forward biasing of junction diode, the width of depletion layer
1 decreases
2 increases
3 remains unchanged
4 none of these
Explanation:
B In the case of forward bias width of depletion layer decreases.
Semiconductor Electronics Material Devices and Simple Circuits
150905
In a p-n junction diode, change in temperature due to heating
1 does not affect resistance of \(p-n\) junction
2 affects only forward resistance
3 affects only reverse resistance
4 affects the overall V-I characteristics of p-n junction
Explanation:
D As we know that due to heating, the number of electron-hole pairs will increase. Therefore, overall resistance of diode will change and this is the reason where both forward biasing and reversed biasing are changed.
NEET- 2018
Semiconductor Electronics Material Devices and Simple Circuits
150911
The barrier potential of a p-n junction depends on (i) type of semiconductor material (ii) amount of doping (iii) temperature Which one of the following is correct?
1 (i) and (ii) only
2 (ii) only
3 (ii) and (iii) only
4 (i), (ii) and (iii)
Explanation:
D The barrier potential of a p-n junction depends on type of semiconductor material, amount of doping and temperature. Hence, all the given statements are correct.
AIPMT- 2014
Semiconductor Electronics Material Devices and Simple Circuits
150912
Out of the following which one is a forward biased diode?
1
2
3
4
Explanation:
D In forward bias p-side have + ve terminal and \(\mathrm{n}\)-side -ve terminal voltage respectively Higher to lower potential. So, by option (d), \(0 \mathrm{~V}\) is p-side with \(+\mathrm{ve}\) terminal and \(-3 \mathrm{~V}\) which is \(\mathrm{n}\)-side with \(-\mathrm{ve}\) terminal they represent forward bias.
NEET-- (Oct.) 2020
Semiconductor Electronics Material Devices and Simple Circuits
150854
In forward biasing of junction diode, the width of depletion layer
1 decreases
2 increases
3 remains unchanged
4 none of these
Explanation:
B In the case of forward bias width of depletion layer decreases.
Semiconductor Electronics Material Devices and Simple Circuits
150905
In a p-n junction diode, change in temperature due to heating
1 does not affect resistance of \(p-n\) junction
2 affects only forward resistance
3 affects only reverse resistance
4 affects the overall V-I characteristics of p-n junction
Explanation:
D As we know that due to heating, the number of electron-hole pairs will increase. Therefore, overall resistance of diode will change and this is the reason where both forward biasing and reversed biasing are changed.
NEET- 2018
Semiconductor Electronics Material Devices and Simple Circuits
150911
The barrier potential of a p-n junction depends on (i) type of semiconductor material (ii) amount of doping (iii) temperature Which one of the following is correct?
1 (i) and (ii) only
2 (ii) only
3 (ii) and (iii) only
4 (i), (ii) and (iii)
Explanation:
D The barrier potential of a p-n junction depends on type of semiconductor material, amount of doping and temperature. Hence, all the given statements are correct.
AIPMT- 2014
Semiconductor Electronics Material Devices and Simple Circuits
150912
Out of the following which one is a forward biased diode?
1
2
3
4
Explanation:
D In forward bias p-side have + ve terminal and \(\mathrm{n}\)-side -ve terminal voltage respectively Higher to lower potential. So, by option (d), \(0 \mathrm{~V}\) is p-side with \(+\mathrm{ve}\) terminal and \(-3 \mathrm{~V}\) which is \(\mathrm{n}\)-side with \(-\mathrm{ve}\) terminal they represent forward bias.
NEET-- (Oct.) 2020
Semiconductor Electronics Material Devices and Simple Circuits
150854
In forward biasing of junction diode, the width of depletion layer
1 decreases
2 increases
3 remains unchanged
4 none of these
Explanation:
B In the case of forward bias width of depletion layer decreases.
Semiconductor Electronics Material Devices and Simple Circuits
150905
In a p-n junction diode, change in temperature due to heating
1 does not affect resistance of \(p-n\) junction
2 affects only forward resistance
3 affects only reverse resistance
4 affects the overall V-I characteristics of p-n junction
Explanation:
D As we know that due to heating, the number of electron-hole pairs will increase. Therefore, overall resistance of diode will change and this is the reason where both forward biasing and reversed biasing are changed.
NEET- 2018
Semiconductor Electronics Material Devices and Simple Circuits
150911
The barrier potential of a p-n junction depends on (i) type of semiconductor material (ii) amount of doping (iii) temperature Which one of the following is correct?
1 (i) and (ii) only
2 (ii) only
3 (ii) and (iii) only
4 (i), (ii) and (iii)
Explanation:
D The barrier potential of a p-n junction depends on type of semiconductor material, amount of doping and temperature. Hence, all the given statements are correct.
AIPMT- 2014
Semiconductor Electronics Material Devices and Simple Circuits
150912
Out of the following which one is a forward biased diode?
1
2
3
4
Explanation:
D In forward bias p-side have + ve terminal and \(\mathrm{n}\)-side -ve terminal voltage respectively Higher to lower potential. So, by option (d), \(0 \mathrm{~V}\) is p-side with \(+\mathrm{ve}\) terminal and \(-3 \mathrm{~V}\) which is \(\mathrm{n}\)-side with \(-\mathrm{ve}\) terminal they represent forward bias.
NEET-- (Oct.) 2020
Semiconductor Electronics Material Devices and Simple Circuits
150854
In forward biasing of junction diode, the width of depletion layer
1 decreases
2 increases
3 remains unchanged
4 none of these
Explanation:
B In the case of forward bias width of depletion layer decreases.
