Diode -(P-n Junction Diode Forward and Reverse Bias)
NEET Test Series from KOTA - 10 Papers In MS WORD WhatsApp Here
Semiconductor Electronics Material Devices and Simple Circuits

150846 Two ammeters \(A_1\) and \(A_2\) are connected as shown in the given figure. By neglecting the internal resistance of the ammeters, the reading in the meter \(A_1\) is
original image

1 \(2 \mathrm{~A}\)
2 \(0 \mathrm{~A}\)
3 \(1 \mathrm{~A}\)
4 \(4 \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150847 The current through the ammeter (neglecting internal resistance) in the following circuit is
original image

1 \(2 \mathrm{~A}\)
2 \(1 \mathrm{~A}\)
3 \(0.5 \mathrm{~A}\)
4 0
Semiconductor Electronics Material Devices and Simple Circuits

150848 In a \(p-n\) junction, an electric field of \(5 \times 10^5\) \(\mathrm{V} / \mathrm{m}\) exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from \(n\)-side to the \(p\) - side, is found to be \(3.2 \times 10^{-20} \mathrm{~J}\). The width of the depletion region is

1 \(2 \times 10^{-4} \mathrm{~cm}\)
2 \(8 \times 10^{-5} \mathrm{~cm}\)
3 \(5 \times 10^{-6} \mathrm{~cm}\)
4 \(4 \times 10^{-5} \mathrm{~cm}\)
Semiconductor Electronics Material Devices and Simple Circuits

150850 Which of the following is correct with respect of the following statements?
Due to diffusion of electrons from \(n\) to \(p\)-side
(I) electrons are accumulated in the depletion region
(II) electron drift current is from p-side n-side
(III) an ionised donor is left in the n-region
(IV) electrons of \(\mathrm{n}\)-side comes to \(\mathrm{p}\)-side and electron-hole recombination takes in p-side
Select the correct option from the following.

1 (I) and (II)
2 (I) and (III)
3 (I) and (IV)
4 (II), (III) and (IV)
Semiconductor Electronics Material Devices and Simple Circuits

150846 Two ammeters \(A_1\) and \(A_2\) are connected as shown in the given figure. By neglecting the internal resistance of the ammeters, the reading in the meter \(A_1\) is
original image

1 \(2 \mathrm{~A}\)
2 \(0 \mathrm{~A}\)
3 \(1 \mathrm{~A}\)
4 \(4 \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150847 The current through the ammeter (neglecting internal resistance) in the following circuit is
original image

1 \(2 \mathrm{~A}\)
2 \(1 \mathrm{~A}\)
3 \(0.5 \mathrm{~A}\)
4 0
Semiconductor Electronics Material Devices and Simple Circuits

150848 In a \(p-n\) junction, an electric field of \(5 \times 10^5\) \(\mathrm{V} / \mathrm{m}\) exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from \(n\)-side to the \(p\) - side, is found to be \(3.2 \times 10^{-20} \mathrm{~J}\). The width of the depletion region is

1 \(2 \times 10^{-4} \mathrm{~cm}\)
2 \(8 \times 10^{-5} \mathrm{~cm}\)
3 \(5 \times 10^{-6} \mathrm{~cm}\)
4 \(4 \times 10^{-5} \mathrm{~cm}\)
Semiconductor Electronics Material Devices and Simple Circuits

150850 Which of the following is correct with respect of the following statements?
Due to diffusion of electrons from \(n\) to \(p\)-side
(I) electrons are accumulated in the depletion region
(II) electron drift current is from p-side n-side
(III) an ionised donor is left in the n-region
(IV) electrons of \(\mathrm{n}\)-side comes to \(\mathrm{p}\)-side and electron-hole recombination takes in p-side
Select the correct option from the following.

1 (I) and (II)
2 (I) and (III)
3 (I) and (IV)
4 (II), (III) and (IV)
Semiconductor Electronics Material Devices and Simple Circuits

150846 Two ammeters \(A_1\) and \(A_2\) are connected as shown in the given figure. By neglecting the internal resistance of the ammeters, the reading in the meter \(A_1\) is
original image

1 \(2 \mathrm{~A}\)
2 \(0 \mathrm{~A}\)
3 \(1 \mathrm{~A}\)
4 \(4 \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150847 The current through the ammeter (neglecting internal resistance) in the following circuit is
original image

1 \(2 \mathrm{~A}\)
2 \(1 \mathrm{~A}\)
3 \(0.5 \mathrm{~A}\)
4 0
Semiconductor Electronics Material Devices and Simple Circuits

150848 In a \(p-n\) junction, an electric field of \(5 \times 10^5\) \(\mathrm{V} / \mathrm{m}\) exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from \(n\)-side to the \(p\) - side, is found to be \(3.2 \times 10^{-20} \mathrm{~J}\). The width of the depletion region is

1 \(2 \times 10^{-4} \mathrm{~cm}\)
2 \(8 \times 10^{-5} \mathrm{~cm}\)
3 \(5 \times 10^{-6} \mathrm{~cm}\)
4 \(4 \times 10^{-5} \mathrm{~cm}\)
Semiconductor Electronics Material Devices and Simple Circuits

150850 Which of the following is correct with respect of the following statements?
Due to diffusion of electrons from \(n\) to \(p\)-side
(I) electrons are accumulated in the depletion region
(II) electron drift current is from p-side n-side
(III) an ionised donor is left in the n-region
(IV) electrons of \(\mathrm{n}\)-side comes to \(\mathrm{p}\)-side and electron-hole recombination takes in p-side
Select the correct option from the following.

1 (I) and (II)
2 (I) and (III)
3 (I) and (IV)
4 (II), (III) and (IV)
NEET Test Series from KOTA - 10 Papers In MS WORD WhatsApp Here
Semiconductor Electronics Material Devices and Simple Circuits

150846 Two ammeters \(A_1\) and \(A_2\) are connected as shown in the given figure. By neglecting the internal resistance of the ammeters, the reading in the meter \(A_1\) is
original image

1 \(2 \mathrm{~A}\)
2 \(0 \mathrm{~A}\)
3 \(1 \mathrm{~A}\)
4 \(4 \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150847 The current through the ammeter (neglecting internal resistance) in the following circuit is
original image

1 \(2 \mathrm{~A}\)
2 \(1 \mathrm{~A}\)
3 \(0.5 \mathrm{~A}\)
4 0
Semiconductor Electronics Material Devices and Simple Circuits

150848 In a \(p-n\) junction, an electric field of \(5 \times 10^5\) \(\mathrm{V} / \mathrm{m}\) exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from \(n\)-side to the \(p\) - side, is found to be \(3.2 \times 10^{-20} \mathrm{~J}\). The width of the depletion region is

1 \(2 \times 10^{-4} \mathrm{~cm}\)
2 \(8 \times 10^{-5} \mathrm{~cm}\)
3 \(5 \times 10^{-6} \mathrm{~cm}\)
4 \(4 \times 10^{-5} \mathrm{~cm}\)
Semiconductor Electronics Material Devices and Simple Circuits

150850 Which of the following is correct with respect of the following statements?
Due to diffusion of electrons from \(n\) to \(p\)-side
(I) electrons are accumulated in the depletion region
(II) electron drift current is from p-side n-side
(III) an ionised donor is left in the n-region
(IV) electrons of \(\mathrm{n}\)-side comes to \(\mathrm{p}\)-side and electron-hole recombination takes in p-side
Select the correct option from the following.

1 (I) and (II)
2 (I) and (III)
3 (I) and (IV)
4 (II), (III) and (IV)