150842 A p-n junction has a depletion region \(8 \times \mathbf{1 0}^{-7}\) \(\mathrm{m}\) wide. The intensity of the electric field inside the depletion region is \(2 \times 10^6 \mathrm{~V} / \mathrm{m}\). A hole approaches the \(p-n\) junction from \(p\)-side. The change in kinetic energy of the hole as it enters the \(\mathbf{n}\)-side will be

150843 In the circuit shown below, if \(V_2=V_m \sin \omega t\) and the diode is ideal, the average value of voltage across \(R_L\) is (Assume source resistance is zero)

150900 Of the diodes shown in the following diagrams, which one is reverse biased?

1

2

3

4

150845 The determine the current passing through the diode \(D_2\) in the circuit given. Assume these are silicon diodes.

150842 A p-n junction has a depletion region \(8 \times \mathbf{1 0}^{-7}\) \(\mathrm{m}\) wide. The intensity of the electric field inside the depletion region is \(2 \times 10^6 \mathrm{~V} / \mathrm{m}\). A hole approaches the \(p-n\) junction from \(p\)-side. The change in kinetic energy of the hole as it enters the \(\mathbf{n}\)-side will be

150843 In the circuit shown below, if \(V_2=V_m \sin \omega t\) and the diode is ideal, the average value of voltage across \(R_L\) is (Assume source resistance is zero)

150900 Of the diodes shown in the following diagrams, which one is reverse biased?

1

2

3

4

150845 The determine the current passing through the diode \(D_2\) in the circuit given. Assume these are silicon diodes.

150842 A p-n junction has a depletion region \(8 \times \mathbf{1 0}^{-7}\) \(\mathrm{m}\) wide. The intensity of the electric field inside the depletion region is \(2 \times 10^6 \mathrm{~V} / \mathrm{m}\). A hole approaches the \(p-n\) junction from \(p\)-side. The change in kinetic energy of the hole as it enters the \(\mathbf{n}\)-side will be

150843 In the circuit shown below, if \(V_2=V_m \sin \omega t\) and the diode is ideal, the average value of voltage across \(R_L\) is (Assume source resistance is zero)

150900 Of the diodes shown in the following diagrams, which one is reverse biased?

1

2

3

4

150845 The determine the current passing through the diode \(D_2\) in the circuit given. Assume these are silicon diodes.

150842 A p-n junction has a depletion region \(8 \times \mathbf{1 0}^{-7}\) \(\mathrm{m}\) wide. The intensity of the electric field inside the depletion region is \(2 \times 10^6 \mathrm{~V} / \mathrm{m}\). A hole approaches the \(p-n\) junction from \(p\)-side. The change in kinetic energy of the hole as it enters the \(\mathbf{n}\)-side will be

150843 In the circuit shown below, if \(V_2=V_m \sin \omega t\) and the diode is ideal, the average value of voltage across \(R_L\) is (Assume source resistance is zero)

150900 Of the diodes shown in the following diagrams, which one is reverse biased?

1

2

3

4

150845 The determine the current passing through the diode \(D_2\) in the circuit given. Assume these are silicon diodes.