Semiconductor Electronics Material Devices and Simple Circuits
150835
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Drift of electrons
3 Diffusion of carriers
4 Migration of impurity ions
Explanation:
C In \(\mathrm{p}-\mathrm{n}\) junction diode hole are majority carrier in p-type \& electrons are majority carrier in \(\mathrm{n}-\) type, holes are positively charge \& electrons are negatively charged due to diffusion of these charge a layer is formed called depletion layer.
UP CPMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150837
On applying reverse bias to a junction diode, it
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B In reverse biasing the conduction across the p-n junction takes place due to minority carriers therefore the size of depletion region (potential barrier) rise.
UP CPMT-2005
Semiconductor Electronics Material Devices and Simple Circuits
150901
In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to
1 The barrier voltage at the \(\mathrm{p}-\mathrm{n}\) junction
2 The intensity of the light falling on the cell
3 The frequency of the light falling on the cell
4 The voltage applied at the \(p-n\) junction
Explanation:
B In photo cell, photo-electromotive force produced by monochromatic light is proportional to the intensity of the light falling on the cell.
AIPMT- 2004
Semiconductor Electronics Material Devices and Simple Circuits
150852
A p-n junction has a thickness of the order of
1 \(10^{-2} \mathrm{~m}\)
2 \(10^{-8} \mathrm{~m}\)
3 \(10^{-4} \mathrm{~m}\)
4 \(10^{-6} \mathrm{~m}\)
Explanation:
D p-n function has a thickness of order \(10^{-6} \mathrm{~m}\)
SRMJEEE - 2007
Semiconductor Electronics Material Devices and Simple Circuits
150904
In forward biasing of the \(p-n\) junction
1 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thin
2 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thick
3 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region become thin
4 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region becomes thick
Explanation:
C In p-n junction, the forward biasing Positive terminal of battery is connected to p-side and the negative terminal to \(\mathrm{n}\)-side therefore depletion layer becomes thin.
Semiconductor Electronics Material Devices and Simple Circuits
150835
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Drift of electrons
3 Diffusion of carriers
4 Migration of impurity ions
Explanation:
C In \(\mathrm{p}-\mathrm{n}\) junction diode hole are majority carrier in p-type \& electrons are majority carrier in \(\mathrm{n}-\) type, holes are positively charge \& electrons are negatively charged due to diffusion of these charge a layer is formed called depletion layer.
UP CPMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150837
On applying reverse bias to a junction diode, it
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B In reverse biasing the conduction across the p-n junction takes place due to minority carriers therefore the size of depletion region (potential barrier) rise.
UP CPMT-2005
Semiconductor Electronics Material Devices and Simple Circuits
150901
In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to
1 The barrier voltage at the \(\mathrm{p}-\mathrm{n}\) junction
2 The intensity of the light falling on the cell
3 The frequency of the light falling on the cell
4 The voltage applied at the \(p-n\) junction
Explanation:
B In photo cell, photo-electromotive force produced by monochromatic light is proportional to the intensity of the light falling on the cell.
AIPMT- 2004
Semiconductor Electronics Material Devices and Simple Circuits
150852
A p-n junction has a thickness of the order of
1 \(10^{-2} \mathrm{~m}\)
2 \(10^{-8} \mathrm{~m}\)
3 \(10^{-4} \mathrm{~m}\)
4 \(10^{-6} \mathrm{~m}\)
Explanation:
D p-n function has a thickness of order \(10^{-6} \mathrm{~m}\)
SRMJEEE - 2007
Semiconductor Electronics Material Devices and Simple Circuits
150904
In forward biasing of the \(p-n\) junction
1 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thin
2 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thick
3 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region become thin
4 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region becomes thick
Explanation:
C In p-n junction, the forward biasing Positive terminal of battery is connected to p-side and the negative terminal to \(\mathrm{n}\)-side therefore depletion layer becomes thin.
Semiconductor Electronics Material Devices and Simple Circuits
150835
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Drift of electrons
3 Diffusion of carriers
4 Migration of impurity ions
Explanation:
C In \(\mathrm{p}-\mathrm{n}\) junction diode hole are majority carrier in p-type \& electrons are majority carrier in \(\mathrm{n}-\) type, holes are positively charge \& electrons are negatively charged due to diffusion of these charge a layer is formed called depletion layer.
UP CPMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150837
On applying reverse bias to a junction diode, it
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B In reverse biasing the conduction across the p-n junction takes place due to minority carriers therefore the size of depletion region (potential barrier) rise.
UP CPMT-2005
Semiconductor Electronics Material Devices and Simple Circuits
150901
In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to
1 The barrier voltage at the \(\mathrm{p}-\mathrm{n}\) junction
2 The intensity of the light falling on the cell
3 The frequency of the light falling on the cell
4 The voltage applied at the \(p-n\) junction
Explanation:
B In photo cell, photo-electromotive force produced by monochromatic light is proportional to the intensity of the light falling on the cell.
AIPMT- 2004
Semiconductor Electronics Material Devices and Simple Circuits
150852
A p-n junction has a thickness of the order of
1 \(10^{-2} \mathrm{~m}\)
2 \(10^{-8} \mathrm{~m}\)
3 \(10^{-4} \mathrm{~m}\)
4 \(10^{-6} \mathrm{~m}\)
Explanation:
D p-n function has a thickness of order \(10^{-6} \mathrm{~m}\)
SRMJEEE - 2007
Semiconductor Electronics Material Devices and Simple Circuits
150904
In forward biasing of the \(p-n\) junction
1 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thin
2 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thick
3 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region become thin
4 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region becomes thick
Explanation:
C In p-n junction, the forward biasing Positive terminal of battery is connected to p-side and the negative terminal to \(\mathrm{n}\)-side therefore depletion layer becomes thin.
Semiconductor Electronics Material Devices and Simple Circuits
150835
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Drift of electrons
3 Diffusion of carriers
4 Migration of impurity ions
Explanation:
C In \(\mathrm{p}-\mathrm{n}\) junction diode hole are majority carrier in p-type \& electrons are majority carrier in \(\mathrm{n}-\) type, holes are positively charge \& electrons are negatively charged due to diffusion of these charge a layer is formed called depletion layer.
UP CPMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150837
On applying reverse bias to a junction diode, it
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B In reverse biasing the conduction across the p-n junction takes place due to minority carriers therefore the size of depletion region (potential barrier) rise.
UP CPMT-2005
Semiconductor Electronics Material Devices and Simple Circuits
150901
In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to
1 The barrier voltage at the \(\mathrm{p}-\mathrm{n}\) junction
2 The intensity of the light falling on the cell
3 The frequency of the light falling on the cell
4 The voltage applied at the \(p-n\) junction
Explanation:
B In photo cell, photo-electromotive force produced by monochromatic light is proportional to the intensity of the light falling on the cell.
AIPMT- 2004
Semiconductor Electronics Material Devices and Simple Circuits
150852
A p-n junction has a thickness of the order of
1 \(10^{-2} \mathrm{~m}\)
2 \(10^{-8} \mathrm{~m}\)
3 \(10^{-4} \mathrm{~m}\)
4 \(10^{-6} \mathrm{~m}\)
Explanation:
D p-n function has a thickness of order \(10^{-6} \mathrm{~m}\)
SRMJEEE - 2007
Semiconductor Electronics Material Devices and Simple Circuits
150904
In forward biasing of the \(p-n\) junction
1 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thin
2 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thick
3 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region become thin
4 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region becomes thick
Explanation:
C In p-n junction, the forward biasing Positive terminal of battery is connected to p-side and the negative terminal to \(\mathrm{n}\)-side therefore depletion layer becomes thin.
Semiconductor Electronics Material Devices and Simple Circuits
150835
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Drift of electrons
3 Diffusion of carriers
4 Migration of impurity ions
Explanation:
C In \(\mathrm{p}-\mathrm{n}\) junction diode hole are majority carrier in p-type \& electrons are majority carrier in \(\mathrm{n}-\) type, holes are positively charge \& electrons are negatively charged due to diffusion of these charge a layer is formed called depletion layer.
UP CPMT-2013
Semiconductor Electronics Material Devices and Simple Circuits
150837
On applying reverse bias to a junction diode, it
1 lowers the potential barrier
2 raises the potential barrier
3 increases the majority carrier current
4 increases the minority carrier current
Explanation:
B In reverse biasing the conduction across the p-n junction takes place due to minority carriers therefore the size of depletion region (potential barrier) rise.
UP CPMT-2005
Semiconductor Electronics Material Devices and Simple Circuits
150901
In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to
1 The barrier voltage at the \(\mathrm{p}-\mathrm{n}\) junction
2 The intensity of the light falling on the cell
3 The frequency of the light falling on the cell
4 The voltage applied at the \(p-n\) junction
Explanation:
B In photo cell, photo-electromotive force produced by monochromatic light is proportional to the intensity of the light falling on the cell.
AIPMT- 2004
Semiconductor Electronics Material Devices and Simple Circuits
150852
A p-n junction has a thickness of the order of
1 \(10^{-2} \mathrm{~m}\)
2 \(10^{-8} \mathrm{~m}\)
3 \(10^{-4} \mathrm{~m}\)
4 \(10^{-6} \mathrm{~m}\)
Explanation:
D p-n function has a thickness of order \(10^{-6} \mathrm{~m}\)
SRMJEEE - 2007
Semiconductor Electronics Material Devices and Simple Circuits
150904
In forward biasing of the \(p-n\) junction
1 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thin
2 the positive terminal of the battery is connected to \(\mathrm{n}\)-side and the depletion region becomes thick
3 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region become thin
4 the positive terminal of the battery is connected to \(\mathrm{p}\)-side and the depletion region becomes thick
Explanation:
C In p-n junction, the forward biasing Positive terminal of battery is connected to p-side and the negative terminal to \(\mathrm{n}\)-side therefore depletion layer becomes thin.
