Semiconductor Electronics Material Devices and Simple Circuits
150827
Based on the I-V characteristics of the diode, we can classify diode as
1 bi-directional device
2 ohmic device
3 non-Ohmic device
4 passive element
Explanation:
C Given that, V-I characteristic of diode is given by Diode is a unidirectional device and works only in forward bias condition \& it does not follow the ohm's law, So it is a non-ohmic device.
J and K CET-2013
Semiconductor Electronics Material Devices and Simple Circuits
150886
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Diffusion of charge carriers
3 Migration of impurity ions
4 Drift of electrons
Explanation:
B The depletion layer in the p-n junction region is caused by diffusion of charge carriers.
AIPMT- 1991
Semiconductor Electronics Material Devices and Simple Circuits
150903
A forward biased diode is
1
2
3
4
Explanation:
D Forward biased in p-n junction diode is when it is connected in forward bias then a negative voltage is applied to n-type while Positive voltage is applied to p-type.
AIPMT- 2006]
Semiconductor Electronics Material Devices and Simple Circuits
150833
The output from a full wave rectifier with an \(\mathrm{L}-\mathrm{C}\) filter is
1 a d.c. voltage
2 zero voltage
3 a pulsating unidirectional voltage
4 an a.c. voltage
Explanation:
C The output of full wave rectifier with LC filter is pulsating unidirectional voltage.
Semiconductor Electronics Material Devices and Simple Circuits
150827
Based on the I-V characteristics of the diode, we can classify diode as
1 bi-directional device
2 ohmic device
3 non-Ohmic device
4 passive element
Explanation:
C Given that, V-I characteristic of diode is given by Diode is a unidirectional device and works only in forward bias condition \& it does not follow the ohm's law, So it is a non-ohmic device.
J and K CET-2013
Semiconductor Electronics Material Devices and Simple Circuits
150886
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Diffusion of charge carriers
3 Migration of impurity ions
4 Drift of electrons
Explanation:
B The depletion layer in the p-n junction region is caused by diffusion of charge carriers.
AIPMT- 1991
Semiconductor Electronics Material Devices and Simple Circuits
150903
A forward biased diode is
1
2
3
4
Explanation:
D Forward biased in p-n junction diode is when it is connected in forward bias then a negative voltage is applied to n-type while Positive voltage is applied to p-type.
AIPMT- 2006]
Semiconductor Electronics Material Devices and Simple Circuits
150833
The output from a full wave rectifier with an \(\mathrm{L}-\mathrm{C}\) filter is
1 a d.c. voltage
2 zero voltage
3 a pulsating unidirectional voltage
4 an a.c. voltage
Explanation:
C The output of full wave rectifier with LC filter is pulsating unidirectional voltage.
Semiconductor Electronics Material Devices and Simple Circuits
150827
Based on the I-V characteristics of the diode, we can classify diode as
1 bi-directional device
2 ohmic device
3 non-Ohmic device
4 passive element
Explanation:
C Given that, V-I characteristic of diode is given by Diode is a unidirectional device and works only in forward bias condition \& it does not follow the ohm's law, So it is a non-ohmic device.
J and K CET-2013
Semiconductor Electronics Material Devices and Simple Circuits
150886
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Diffusion of charge carriers
3 Migration of impurity ions
4 Drift of electrons
Explanation:
B The depletion layer in the p-n junction region is caused by diffusion of charge carriers.
AIPMT- 1991
Semiconductor Electronics Material Devices and Simple Circuits
150903
A forward biased diode is
1
2
3
4
Explanation:
D Forward biased in p-n junction diode is when it is connected in forward bias then a negative voltage is applied to n-type while Positive voltage is applied to p-type.
AIPMT- 2006]
Semiconductor Electronics Material Devices and Simple Circuits
150833
The output from a full wave rectifier with an \(\mathrm{L}-\mathrm{C}\) filter is
1 a d.c. voltage
2 zero voltage
3 a pulsating unidirectional voltage
4 an a.c. voltage
Explanation:
C The output of full wave rectifier with LC filter is pulsating unidirectional voltage.
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Semiconductor Electronics Material Devices and Simple Circuits
150827
Based on the I-V characteristics of the diode, we can classify diode as
1 bi-directional device
2 ohmic device
3 non-Ohmic device
4 passive element
Explanation:
C Given that, V-I characteristic of diode is given by Diode is a unidirectional device and works only in forward bias condition \& it does not follow the ohm's law, So it is a non-ohmic device.
J and K CET-2013
Semiconductor Electronics Material Devices and Simple Circuits
150886
The depletion layer in the \(p-n\) junction region is caused by
1 Drift of holes
2 Diffusion of charge carriers
3 Migration of impurity ions
4 Drift of electrons
Explanation:
B The depletion layer in the p-n junction region is caused by diffusion of charge carriers.
AIPMT- 1991
Semiconductor Electronics Material Devices and Simple Circuits
150903
A forward biased diode is
1
2
3
4
Explanation:
D Forward biased in p-n junction diode is when it is connected in forward bias then a negative voltage is applied to n-type while Positive voltage is applied to p-type.
AIPMT- 2006]
Semiconductor Electronics Material Devices and Simple Circuits
150833
The output from a full wave rectifier with an \(\mathrm{L}-\mathrm{C}\) filter is
1 a d.c. voltage
2 zero voltage
3 a pulsating unidirectional voltage
4 an a.c. voltage
Explanation:
C The output of full wave rectifier with LC filter is pulsating unidirectional voltage.
