Diode -(P-n Junction Diode Forward and Reverse Bias)
Semiconductor Electronics Material Devices and Simple Circuits

150816 In which of the following figures, the PN diode is forward biased.

1 original image
2 original image
3 original image
4 original image
Semiconductor Electronics Material Devices and Simple Circuits

150818 The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 at all currents and maximum power rating of 100 milli-watts. What should be the value of the resistance \(R\), connected in series with the diode, for obtaining maximum current?
original image

1 \(1.5 \mathrm{ohm}\)
2 \(5 \mathrm{ohm}\)
3 \(6.67 \mathrm{ohm}\)
4 \(200 \mathrm{ohm}\)
Semiconductor Electronics Material Devices and Simple Circuits

150829 In a three phase full-wave rectifier of \(100 \mathrm{~Hz}\), the ripple frequency is

1 \(200 \mathrm{~Hz}\)
2 \(100 \mathrm{~Hz}\)
3 \(600 \mathrm{~Hz}\)
4 \(300 \mathrm{~Hz}\)
Semiconductor Electronics Material Devices and Simple Circuits

150830 A Zener diode having break-down voltage \(\mathbf{5 . 6}\) \(V\) is connected in reverse bias with a battery of emf \(10 \mathrm{~V}\) and a resistance of \(100 \Omega\) in series. The current flowing through the Zener diode is

1 \(88 \mathrm{~mA}\)
2 \(0.88 \mathrm{~mA}\)
3 \(4.4 \mathrm{~mA}\)
4 \(44 \mathrm{~mA}\)
NEET Test Series from KOTA - 10 Papers In MS WORD WhatsApp Here
Semiconductor Electronics Material Devices and Simple Circuits

150816 In which of the following figures, the PN diode is forward biased.

1 original image
2 original image
3 original image
4 original image
Semiconductor Electronics Material Devices and Simple Circuits

150818 The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 at all currents and maximum power rating of 100 milli-watts. What should be the value of the resistance \(R\), connected in series with the diode, for obtaining maximum current?
original image

1 \(1.5 \mathrm{ohm}\)
2 \(5 \mathrm{ohm}\)
3 \(6.67 \mathrm{ohm}\)
4 \(200 \mathrm{ohm}\)
Semiconductor Electronics Material Devices and Simple Circuits

150829 In a three phase full-wave rectifier of \(100 \mathrm{~Hz}\), the ripple frequency is

1 \(200 \mathrm{~Hz}\)
2 \(100 \mathrm{~Hz}\)
3 \(600 \mathrm{~Hz}\)
4 \(300 \mathrm{~Hz}\)
Semiconductor Electronics Material Devices and Simple Circuits

150830 A Zener diode having break-down voltage \(\mathbf{5 . 6}\) \(V\) is connected in reverse bias with a battery of emf \(10 \mathrm{~V}\) and a resistance of \(100 \Omega\) in series. The current flowing through the Zener diode is

1 \(88 \mathrm{~mA}\)
2 \(0.88 \mathrm{~mA}\)
3 \(4.4 \mathrm{~mA}\)
4 \(44 \mathrm{~mA}\)
Semiconductor Electronics Material Devices and Simple Circuits

150816 In which of the following figures, the PN diode is forward biased.

1 original image
2 original image
3 original image
4 original image
Semiconductor Electronics Material Devices and Simple Circuits

150818 The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 at all currents and maximum power rating of 100 milli-watts. What should be the value of the resistance \(R\), connected in series with the diode, for obtaining maximum current?
original image

1 \(1.5 \mathrm{ohm}\)
2 \(5 \mathrm{ohm}\)
3 \(6.67 \mathrm{ohm}\)
4 \(200 \mathrm{ohm}\)
Semiconductor Electronics Material Devices and Simple Circuits

150829 In a three phase full-wave rectifier of \(100 \mathrm{~Hz}\), the ripple frequency is

1 \(200 \mathrm{~Hz}\)
2 \(100 \mathrm{~Hz}\)
3 \(600 \mathrm{~Hz}\)
4 \(300 \mathrm{~Hz}\)
Semiconductor Electronics Material Devices and Simple Circuits

150830 A Zener diode having break-down voltage \(\mathbf{5 . 6}\) \(V\) is connected in reverse bias with a battery of emf \(10 \mathrm{~V}\) and a resistance of \(100 \Omega\) in series. The current flowing through the Zener diode is

1 \(88 \mathrm{~mA}\)
2 \(0.88 \mathrm{~mA}\)
3 \(4.4 \mathrm{~mA}\)
4 \(44 \mathrm{~mA}\)
Semiconductor Electronics Material Devices and Simple Circuits

150816 In which of the following figures, the PN diode is forward biased.

1 original image
2 original image
3 original image
4 original image
Semiconductor Electronics Material Devices and Simple Circuits

150818 The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 at all currents and maximum power rating of 100 milli-watts. What should be the value of the resistance \(R\), connected in series with the diode, for obtaining maximum current?
original image

1 \(1.5 \mathrm{ohm}\)
2 \(5 \mathrm{ohm}\)
3 \(6.67 \mathrm{ohm}\)
4 \(200 \mathrm{ohm}\)
Semiconductor Electronics Material Devices and Simple Circuits

150829 In a three phase full-wave rectifier of \(100 \mathrm{~Hz}\), the ripple frequency is

1 \(200 \mathrm{~Hz}\)
2 \(100 \mathrm{~Hz}\)
3 \(600 \mathrm{~Hz}\)
4 \(300 \mathrm{~Hz}\)
Semiconductor Electronics Material Devices and Simple Circuits

150830 A Zener diode having break-down voltage \(\mathbf{5 . 6}\) \(V\) is connected in reverse bias with a battery of emf \(10 \mathrm{~V}\) and a resistance of \(100 \Omega\) in series. The current flowing through the Zener diode is

1 \(88 \mathrm{~mA}\)
2 \(0.88 \mathrm{~mA}\)
3 \(4.4 \mathrm{~mA}\)
4 \(44 \mathrm{~mA}\)