Diode -(P-n Junction Diode Forward and Reverse Bias)
Semiconductor Electronics Material Devices and Simple Circuits

150813 In a forward biased p-n junction diode, the potential barrier in the depletion region is of the form :

1 original image
2 original image
3 original image
4 original image
Semiconductor Electronics Material Devices and Simple Circuits

150821 In a semiconductor diode, \(P\) side is earthed and \(\mathrm{N}\) side is applied to a potential of \(2 \mathrm{~V}\). The diode shall

1 not conduct
2 conduct
3 conduct partially
4 breakdown
Semiconductor Electronics Material Devices and Simple Circuits

150822 Efficiency of

1 half wave rectifier is more than full wave rectifier
2 half wave rectifier is almost negligible
3 full wave rectifier is more than half wave rectifier
4 all of these
Semiconductor Electronics Material Devices and Simple Circuits

150825 Alternating current is converted into direct current by

1 dynamo
2 motor
3 transformer
4 rectifier
NEET Test Series from KOTA - 10 Papers In MS WORD WhatsApp Here
Semiconductor Electronics Material Devices and Simple Circuits

150813 In a forward biased p-n junction diode, the potential barrier in the depletion region is of the form :

1 original image
2 original image
3 original image
4 original image
Semiconductor Electronics Material Devices and Simple Circuits

150821 In a semiconductor diode, \(P\) side is earthed and \(\mathrm{N}\) side is applied to a potential of \(2 \mathrm{~V}\). The diode shall

1 not conduct
2 conduct
3 conduct partially
4 breakdown
Semiconductor Electronics Material Devices and Simple Circuits

150822 Efficiency of

1 half wave rectifier is more than full wave rectifier
2 half wave rectifier is almost negligible
3 full wave rectifier is more than half wave rectifier
4 all of these
Semiconductor Electronics Material Devices and Simple Circuits

150825 Alternating current is converted into direct current by

1 dynamo
2 motor
3 transformer
4 rectifier
Semiconductor Electronics Material Devices and Simple Circuits

150813 In a forward biased p-n junction diode, the potential barrier in the depletion region is of the form :

1 original image
2 original image
3 original image
4 original image
Semiconductor Electronics Material Devices and Simple Circuits

150821 In a semiconductor diode, \(P\) side is earthed and \(\mathrm{N}\) side is applied to a potential of \(2 \mathrm{~V}\). The diode shall

1 not conduct
2 conduct
3 conduct partially
4 breakdown
Semiconductor Electronics Material Devices and Simple Circuits

150822 Efficiency of

1 half wave rectifier is more than full wave rectifier
2 half wave rectifier is almost negligible
3 full wave rectifier is more than half wave rectifier
4 all of these
Semiconductor Electronics Material Devices and Simple Circuits

150825 Alternating current is converted into direct current by

1 dynamo
2 motor
3 transformer
4 rectifier
Semiconductor Electronics Material Devices and Simple Circuits

150813 In a forward biased p-n junction diode, the potential barrier in the depletion region is of the form :

1 original image
2 original image
3 original image
4 original image
Semiconductor Electronics Material Devices and Simple Circuits

150821 In a semiconductor diode, \(P\) side is earthed and \(\mathrm{N}\) side is applied to a potential of \(2 \mathrm{~V}\). The diode shall

1 not conduct
2 conduct
3 conduct partially
4 breakdown
Semiconductor Electronics Material Devices and Simple Circuits

150822 Efficiency of

1 half wave rectifier is more than full wave rectifier
2 half wave rectifier is almost negligible
3 full wave rectifier is more than half wave rectifier
4 all of these
Semiconductor Electronics Material Devices and Simple Circuits

150825 Alternating current is converted into direct current by

1 dynamo
2 motor
3 transformer
4 rectifier