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Semiconductor Electronics Material Devices and Simple Circuits

150851 The depletion layer thickness of a p junction is $10^{- 6} m$ . If the potential across it is $0.2 V$ . then the electric field will be

1

10^{7} V / m

2

2 \times 10^{5} V / m

3

10^{5} V / m

4

10^{- 5} V / m

Explanation:

B Given that,
Thickness of depletion Region (d) $= 10^{- 6} m$
Potential across depletion layer $= 0.2 V$
$E = \frac{V}{d} = \frac{0.2}{10^{- 6}} = 0.2 \times 10^{+ 6}$
$E = 2 \times 10^{5} V / m$

TS EAMCET (Medical) 09.08.2021

Semiconductor Electronics Material Devices and Simple Circuits

150862 A reverse biased diode is

1

2

3

4

Explanation:

B Given that,
original image
$P$ is more negative as compare to $N$ .
So, Diode is reverse biases.

MP PET-2008

Semiconductor Electronics Material Devices and Simple Circuits

150867 In a full - wave rectifier circuit operating from $60 Hz$ main frequency, the fundamental frequency in ripple would be

1

100 Hz

2

60 Hz

3

50 Hz

4

120 Hz

Explanation:

D Given that,
Main frequency $(f) = 60 Hz$
$∴$ Fundamental ripple frequency for full-wave rectifier $= 2 f$
$= 2 \times 60 = 120 Hz$

Assam CEE-2016

Semiconductor Electronics Material Devices and Simple Circuits

150869 Consider the following statements
Statement (A) : The resistance of an ideal diode in forward biased condition is zero.
Statement (B) : In a half wave rectifier, the load current flows only for every half cycle of the input signals.
Statement (C) : In the breakdown region, a zener diode behaves as a constant voltage source.

1

A, B & C

are all true.

2 A, B true but

C

is false

3 A, C true but

B

is false

4 B, C true but

A

is false

AP EAMCET-07.07.2022

Semiconductor Electronics Material Devices and Simple Circuits

150925 In a full wave rectifier circuit operating from $50 Hz$ mains frequency, what is the fundamental frequency in the ripple?

1

50 Hz

2

100 Hz

3

25 Hz

4

70 Hz

Explanation:

B Frequency of ripple $= 2 \times$ Input frequency
$= 2 \times 50$
$= 100 Hz$

JCECE-2003

Semiconductor Electronics Material Devices and Simple Circuits

150851 The depletion layer thickness of a p junction is $10^{- 6} m$ . If the potential across it is $0.2 V$ . then the electric field will be

1

10^{7} V / m

2

2 \times 10^{5} V / m

3

10^{5} V / m

4

10^{- 5} V / m

Explanation:

B Given that,
Thickness of depletion Region (d) $= 10^{- 6} m$
Potential across depletion layer $= 0.2 V$
$E = \frac{V}{d} = \frac{0.2}{10^{- 6}} = 0.2 \times 10^{+ 6}$
$E = 2 \times 10^{5} V / m$

TS EAMCET (Medical) 09.08.2021

Semiconductor Electronics Material Devices and Simple Circuits

150862 A reverse biased diode is

1

2

3

4

Explanation:

B Given that,
original image
$P$ is more negative as compare to $N$ .
So, Diode is reverse biases.

MP PET-2008

Semiconductor Electronics Material Devices and Simple Circuits

150867 In a full - wave rectifier circuit operating from $60 Hz$ main frequency, the fundamental frequency in ripple would be

1

100 Hz

2

60 Hz

3

50 Hz

4

120 Hz

Explanation:

D Given that,
Main frequency $(f) = 60 Hz$
$∴$ Fundamental ripple frequency for full-wave rectifier $= 2 f$
$= 2 \times 60 = 120 Hz$

Assam CEE-2016

Semiconductor Electronics Material Devices and Simple Circuits

150869 Consider the following statements
Statement (A) : The resistance of an ideal diode in forward biased condition is zero.
Statement (B) : In a half wave rectifier, the load current flows only for every half cycle of the input signals.
Statement (C) : In the breakdown region, a zener diode behaves as a constant voltage source.

1

A, B & C

are all true.

2 A, B true but

C

is false

3 A, C true but

B

is false

4 B, C true but

A

is false

AP EAMCET-07.07.2022

Semiconductor Electronics Material Devices and Simple Circuits

150925 In a full wave rectifier circuit operating from $50 Hz$ mains frequency, what is the fundamental frequency in the ripple?

1

50 Hz

2

100 Hz

3

25 Hz

4

70 Hz

Explanation:

B Frequency of ripple $= 2 \times$ Input frequency
$= 2 \times 50$
$= 100 Hz$

JCECE-2003

Semiconductor Electronics Material Devices and Simple Circuits

150851 The depletion layer thickness of a p junction is $10^{- 6} m$ . If the potential across it is $0.2 V$ . then the electric field will be

1

10^{7} V / m

2

2 \times 10^{5} V / m

3

10^{5} V / m

4

10^{- 5} V / m

Explanation:

B Given that,
Thickness of depletion Region (d) $= 10^{- 6} m$
Potential across depletion layer $= 0.2 V$
$E = \frac{V}{d} = \frac{0.2}{10^{- 6}} = 0.2 \times 10^{+ 6}$
$E = 2 \times 10^{5} V / m$

TS EAMCET (Medical) 09.08.2021

Semiconductor Electronics Material Devices and Simple Circuits

150862 A reverse biased diode is

1

2

3

4

Explanation:

B Given that,
original image
$P$ is more negative as compare to $N$ .
So, Diode is reverse biases.

MP PET-2008

Semiconductor Electronics Material Devices and Simple Circuits

150867 In a full - wave rectifier circuit operating from $60 Hz$ main frequency, the fundamental frequency in ripple would be

1

100 Hz

2

60 Hz

3

50 Hz

4

120 Hz

Explanation:

D Given that,
Main frequency $(f) = 60 Hz$
$∴$ Fundamental ripple frequency for full-wave rectifier $= 2 f$
$= 2 \times 60 = 120 Hz$

Assam CEE-2016

Semiconductor Electronics Material Devices and Simple Circuits

150869 Consider the following statements
Statement (A) : The resistance of an ideal diode in forward biased condition is zero.
Statement (B) : In a half wave rectifier, the load current flows only for every half cycle of the input signals.
Statement (C) : In the breakdown region, a zener diode behaves as a constant voltage source.

1

A, B & C

are all true.

2 A, B true but

C

is false

3 A, C true but

B

is false

4 B, C true but

A

is false

AP EAMCET-07.07.2022

Semiconductor Electronics Material Devices and Simple Circuits

150925 In a full wave rectifier circuit operating from $50 Hz$ mains frequency, what is the fundamental frequency in the ripple?

1

50 Hz

2

100 Hz

3

25 Hz

4

70 Hz

Explanation:

B Frequency of ripple $= 2 \times$ Input frequency
$= 2 \times 50$
$= 100 Hz$

JCECE-2003

Semiconductor Electronics Material Devices and Simple Circuits

150851 The depletion layer thickness of a p junction is $10^{- 6} m$ . If the potential across it is $0.2 V$ . then the electric field will be

1

10^{7} V / m

2

2 \times 10^{5} V / m

3

10^{5} V / m

4

10^{- 5} V / m

Explanation:

B Given that,
Thickness of depletion Region (d) $= 10^{- 6} m$
Potential across depletion layer $= 0.2 V$
$E = \frac{V}{d} = \frac{0.2}{10^{- 6}} = 0.2 \times 10^{+ 6}$
$E = 2 \times 10^{5} V / m$

TS EAMCET (Medical) 09.08.2021

Semiconductor Electronics Material Devices and Simple Circuits

150862 A reverse biased diode is

1

2

3

4

Explanation:

B Given that,
original image
$P$ is more negative as compare to $N$ .
So, Diode is reverse biases.

MP PET-2008

Semiconductor Electronics Material Devices and Simple Circuits

150867 In a full - wave rectifier circuit operating from $60 Hz$ main frequency, the fundamental frequency in ripple would be

1

100 Hz

2

60 Hz

3

50 Hz

4

120 Hz

Explanation:

D Given that,
Main frequency $(f) = 60 Hz$
$∴$ Fundamental ripple frequency for full-wave rectifier $= 2 f$
$= 2 \times 60 = 120 Hz$

Assam CEE-2016

Semiconductor Electronics Material Devices and Simple Circuits

150869 Consider the following statements
Statement (A) : The resistance of an ideal diode in forward biased condition is zero.
Statement (B) : In a half wave rectifier, the load current flows only for every half cycle of the input signals.
Statement (C) : In the breakdown region, a zener diode behaves as a constant voltage source.

1

A, B & C

are all true.

2 A, B true but

C

is false

3 A, C true but

B

is false

4 B, C true but

A

is false

AP EAMCET-07.07.2022

Semiconductor Electronics Material Devices and Simple Circuits

150925 In a full wave rectifier circuit operating from $50 Hz$ mains frequency, what is the fundamental frequency in the ripple?

1

50 Hz

2

100 Hz

3

25 Hz

4

70 Hz

Explanation:

B Frequency of ripple $= 2 \times$ Input frequency
$= 2 \times 50$
$= 100 Hz$

JCECE-2003

Semiconductor Electronics Material Devices and Simple Circuits

150851 The depletion layer thickness of a p junction is $10^{- 6} m$ . If the potential across it is $0.2 V$ . then the electric field will be

1

10^{7} V / m

2

2 \times 10^{5} V / m

3

10^{5} V / m

4

10^{- 5} V / m

Explanation:

B Given that,
Thickness of depletion Region (d) $= 10^{- 6} m$
Potential across depletion layer $= 0.2 V$
$E = \frac{V}{d} = \frac{0.2}{10^{- 6}} = 0.2 \times 10^{+ 6}$
$E = 2 \times 10^{5} V / m$

TS EAMCET (Medical) 09.08.2021

Semiconductor Electronics Material Devices and Simple Circuits

150862 A reverse biased diode is

1

2

3

4

Explanation:

B Given that,
original image
$P$ is more negative as compare to $N$ .
So, Diode is reverse biases.

MP PET-2008

Semiconductor Electronics Material Devices and Simple Circuits

150867 In a full - wave rectifier circuit operating from $60 Hz$ main frequency, the fundamental frequency in ripple would be

1

100 Hz

2

60 Hz

3

50 Hz

4

120 Hz

Explanation:

D Given that,
Main frequency $(f) = 60 Hz$
$∴$ Fundamental ripple frequency for full-wave rectifier $= 2 f$
$= 2 \times 60 = 120 Hz$

Assam CEE-2016

Semiconductor Electronics Material Devices and Simple Circuits

150869 Consider the following statements
Statement (A) : The resistance of an ideal diode in forward biased condition is zero.
Statement (B) : In a half wave rectifier, the load current flows only for every half cycle of the input signals.
Statement (C) : In the breakdown region, a zener diode behaves as a constant voltage source.

1

A, B & C

are all true.

2 A, B true but

C

is false

3 A, C true but

B

is false

4 B, C true but

A

is false

AP EAMCET-07.07.2022

Semiconductor Electronics Material Devices and Simple Circuits

150925 In a full wave rectifier circuit operating from $50 Hz$ mains frequency, what is the fundamental frequency in the ripple?

1

50 Hz

2

100 Hz

3

25 Hz

4

70 Hz

Explanation:

B Frequency of ripple $= 2 \times$ Input frequency
$= 2 \times 50$
$= 100 Hz$

JCECE-2003