NEET Test Series from KOTA - 10 Papers In MS WORD
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Semiconductor Electronics Material Devices and Simple Circuits
150934
The depletion layer of an unbiased P-N junction consists of
1 only electron
2 only holes
3 both electrons and holes
4 neither electrons nor holes
Explanation:
D The region near the \(\mathrm{P}-\mathrm{N}\) junction where the flow of charge carrier reduced over a given period and finally results in zero charge carriers. * Depletion region is a region in \(\mathrm{P}-\mathrm{N}\) junction diode where neither electrons nor hole are present.
UPSEE 2019
Semiconductor Electronics Material Devices and Simple Circuits
150935
For an electronic valve, the plate current I and plate voltage \(V\) in the space charger limited region are related as
1 I is proportional to \(\mathrm{V}^{3 / 2}\)
2 I is proportional to \(\mathrm{V}^{2 / 3}\)
3 I is proportional to \(\mathrm{V}\)
4 I is proportional to \(\mathrm{V}^2\)
Explanation:
B According to Child - Langmuir law the current density in a planar vaccume tube diode is proportional to the three - half power of bias potential and inversely proportional to the square of the gap distance between the electrons. i. e \(\mathrm{I}=\mathrm{K}(\mathrm{V})^{\frac{3}{2}}\) \(\mathrm{I} \propto(\mathrm{V})^{\frac{3}{2}}\)
AIPMT- 1992
Semiconductor Electronics Material Devices and Simple Circuits
150937
Consider the following statements \(A\) and B identify the correct choice of the given answer.
1 \(\mathrm{A}\) is true and \(\mathrm{B}\) is false
2 Both \(\mathrm{A}\) and \(\mathrm{B}\) are false
3 \(\mathrm{A}\) is false and \(\mathrm{B}\) is true
4 Both A and B are true
Explanation:
C The width of depletion layer in a \(\mathrm{P}-\mathrm{N}\) junction diode is decreases in forward biased and increase in reverse biased. In intrinsic semiconductor the fermi level is exactly in the middle of forbidden energy gap. So, A false and B true
AP EAMCET-2000
Semiconductor Electronics Material Devices and Simple Circuits
150890
The cause of the potential barrier in a p-n diode is
1 Depletion of positive charges near the junction
2 Concentration of positive charges near the junction
3 Depletion of negative charges near the junction
4 Concentration of positive and negative charges near the junction
Explanation:
D Concentration of positive and negative charges near the junction. Holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electrons meet a hole, they cancel the effect each other and a result, a thin layer at the junction becomes free from any of charges carriers. This is called depletion layer.
Semiconductor Electronics Material Devices and Simple Circuits
150934
The depletion layer of an unbiased P-N junction consists of
1 only electron
2 only holes
3 both electrons and holes
4 neither electrons nor holes
Explanation:
D The region near the \(\mathrm{P}-\mathrm{N}\) junction where the flow of charge carrier reduced over a given period and finally results in zero charge carriers. * Depletion region is a region in \(\mathrm{P}-\mathrm{N}\) junction diode where neither electrons nor hole are present.
UPSEE 2019
Semiconductor Electronics Material Devices and Simple Circuits
150935
For an electronic valve, the plate current I and plate voltage \(V\) in the space charger limited region are related as
1 I is proportional to \(\mathrm{V}^{3 / 2}\)
2 I is proportional to \(\mathrm{V}^{2 / 3}\)
3 I is proportional to \(\mathrm{V}\)
4 I is proportional to \(\mathrm{V}^2\)
Explanation:
B According to Child - Langmuir law the current density in a planar vaccume tube diode is proportional to the three - half power of bias potential and inversely proportional to the square of the gap distance between the electrons. i. e \(\mathrm{I}=\mathrm{K}(\mathrm{V})^{\frac{3}{2}}\) \(\mathrm{I} \propto(\mathrm{V})^{\frac{3}{2}}\)
AIPMT- 1992
Semiconductor Electronics Material Devices and Simple Circuits
150937
Consider the following statements \(A\) and B identify the correct choice of the given answer.
1 \(\mathrm{A}\) is true and \(\mathrm{B}\) is false
2 Both \(\mathrm{A}\) and \(\mathrm{B}\) are false
3 \(\mathrm{A}\) is false and \(\mathrm{B}\) is true
4 Both A and B are true
Explanation:
C The width of depletion layer in a \(\mathrm{P}-\mathrm{N}\) junction diode is decreases in forward biased and increase in reverse biased. In intrinsic semiconductor the fermi level is exactly in the middle of forbidden energy gap. So, A false and B true
AP EAMCET-2000
Semiconductor Electronics Material Devices and Simple Circuits
150890
The cause of the potential barrier in a p-n diode is
1 Depletion of positive charges near the junction
2 Concentration of positive charges near the junction
3 Depletion of negative charges near the junction
4 Concentration of positive and negative charges near the junction
Explanation:
D Concentration of positive and negative charges near the junction. Holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electrons meet a hole, they cancel the effect each other and a result, a thin layer at the junction becomes free from any of charges carriers. This is called depletion layer.
Semiconductor Electronics Material Devices and Simple Circuits
150934
The depletion layer of an unbiased P-N junction consists of
1 only electron
2 only holes
3 both electrons and holes
4 neither electrons nor holes
Explanation:
D The region near the \(\mathrm{P}-\mathrm{N}\) junction where the flow of charge carrier reduced over a given period and finally results in zero charge carriers. * Depletion region is a region in \(\mathrm{P}-\mathrm{N}\) junction diode where neither electrons nor hole are present.
UPSEE 2019
Semiconductor Electronics Material Devices and Simple Circuits
150935
For an electronic valve, the plate current I and plate voltage \(V\) in the space charger limited region are related as
1 I is proportional to \(\mathrm{V}^{3 / 2}\)
2 I is proportional to \(\mathrm{V}^{2 / 3}\)
3 I is proportional to \(\mathrm{V}\)
4 I is proportional to \(\mathrm{V}^2\)
Explanation:
B According to Child - Langmuir law the current density in a planar vaccume tube diode is proportional to the three - half power of bias potential and inversely proportional to the square of the gap distance between the electrons. i. e \(\mathrm{I}=\mathrm{K}(\mathrm{V})^{\frac{3}{2}}\) \(\mathrm{I} \propto(\mathrm{V})^{\frac{3}{2}}\)
AIPMT- 1992
Semiconductor Electronics Material Devices and Simple Circuits
150937
Consider the following statements \(A\) and B identify the correct choice of the given answer.
1 \(\mathrm{A}\) is true and \(\mathrm{B}\) is false
2 Both \(\mathrm{A}\) and \(\mathrm{B}\) are false
3 \(\mathrm{A}\) is false and \(\mathrm{B}\) is true
4 Both A and B are true
Explanation:
C The width of depletion layer in a \(\mathrm{P}-\mathrm{N}\) junction diode is decreases in forward biased and increase in reverse biased. In intrinsic semiconductor the fermi level is exactly in the middle of forbidden energy gap. So, A false and B true
AP EAMCET-2000
Semiconductor Electronics Material Devices and Simple Circuits
150890
The cause of the potential barrier in a p-n diode is
1 Depletion of positive charges near the junction
2 Concentration of positive charges near the junction
3 Depletion of negative charges near the junction
4 Concentration of positive and negative charges near the junction
Explanation:
D Concentration of positive and negative charges near the junction. Holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electrons meet a hole, they cancel the effect each other and a result, a thin layer at the junction becomes free from any of charges carriers. This is called depletion layer.
Semiconductor Electronics Material Devices and Simple Circuits
150934
The depletion layer of an unbiased P-N junction consists of
1 only electron
2 only holes
3 both electrons and holes
4 neither electrons nor holes
Explanation:
D The region near the \(\mathrm{P}-\mathrm{N}\) junction where the flow of charge carrier reduced over a given period and finally results in zero charge carriers. * Depletion region is a region in \(\mathrm{P}-\mathrm{N}\) junction diode where neither electrons nor hole are present.
UPSEE 2019
Semiconductor Electronics Material Devices and Simple Circuits
150935
For an electronic valve, the plate current I and plate voltage \(V\) in the space charger limited region are related as
1 I is proportional to \(\mathrm{V}^{3 / 2}\)
2 I is proportional to \(\mathrm{V}^{2 / 3}\)
3 I is proportional to \(\mathrm{V}\)
4 I is proportional to \(\mathrm{V}^2\)
Explanation:
B According to Child - Langmuir law the current density in a planar vaccume tube diode is proportional to the three - half power of bias potential and inversely proportional to the square of the gap distance between the electrons. i. e \(\mathrm{I}=\mathrm{K}(\mathrm{V})^{\frac{3}{2}}\) \(\mathrm{I} \propto(\mathrm{V})^{\frac{3}{2}}\)
AIPMT- 1992
Semiconductor Electronics Material Devices and Simple Circuits
150937
Consider the following statements \(A\) and B identify the correct choice of the given answer.
1 \(\mathrm{A}\) is true and \(\mathrm{B}\) is false
2 Both \(\mathrm{A}\) and \(\mathrm{B}\) are false
3 \(\mathrm{A}\) is false and \(\mathrm{B}\) is true
4 Both A and B are true
Explanation:
C The width of depletion layer in a \(\mathrm{P}-\mathrm{N}\) junction diode is decreases in forward biased and increase in reverse biased. In intrinsic semiconductor the fermi level is exactly in the middle of forbidden energy gap. So, A false and B true
AP EAMCET-2000
Semiconductor Electronics Material Devices and Simple Circuits
150890
The cause of the potential barrier in a p-n diode is
1 Depletion of positive charges near the junction
2 Concentration of positive charges near the junction
3 Depletion of negative charges near the junction
4 Concentration of positive and negative charges near the junction
Explanation:
D Concentration of positive and negative charges near the junction. Holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electrons meet a hole, they cancel the effect each other and a result, a thin layer at the junction becomes free from any of charges carriers. This is called depletion layer.
