150564 The density of electron-hole pair in a pure germanium is \(\mathbf{3} \times \mathbf{1 0}^6 \mathrm{~m}^{-3}\) at room temperature. On doping with aluminium, the hole density increases to \(4.5 \times 10^{22} \mathrm{~m}^{-3}\). Now, the electron density \(\left(\right.\) in \(\mathrm{m}^{-3}\) ) in doped germanium will be:
150573 In a semiconducting material \(\left(\frac{1}{5}\right)^{\text {th }}\) of the total current is carried by the holes and the remaining is carried by the electrons. The drift speed of electrons is twice that of holes at this temperature, the ratio between the number densities of electrons and holes is
150587 The intrinsic carrier concentration of silicon sample at \(300 \mathrm{~K}\) is \(1.5 \times 10^{16} \mathrm{~m}^{-3}\). What is the density of minority carrier? (after doping, the number of majority carriers is \(5 \times \mathbf{1 0}^{\mathbf{2 0}} \mathrm{m}^{-\mathbf{3}}\) )
150564 The density of electron-hole pair in a pure germanium is \(\mathbf{3} \times \mathbf{1 0}^6 \mathrm{~m}^{-3}\) at room temperature. On doping with aluminium, the hole density increases to \(4.5 \times 10^{22} \mathrm{~m}^{-3}\). Now, the electron density \(\left(\right.\) in \(\mathrm{m}^{-3}\) ) in doped germanium will be:
150573 In a semiconducting material \(\left(\frac{1}{5}\right)^{\text {th }}\) of the total current is carried by the holes and the remaining is carried by the electrons. The drift speed of electrons is twice that of holes at this temperature, the ratio between the number densities of electrons and holes is
150587 The intrinsic carrier concentration of silicon sample at \(300 \mathrm{~K}\) is \(1.5 \times 10^{16} \mathrm{~m}^{-3}\). What is the density of minority carrier? (after doping, the number of majority carriers is \(5 \times \mathbf{1 0}^{\mathbf{2 0}} \mathrm{m}^{-\mathbf{3}}\) )
150564 The density of electron-hole pair in a pure germanium is \(\mathbf{3} \times \mathbf{1 0}^6 \mathrm{~m}^{-3}\) at room temperature. On doping with aluminium, the hole density increases to \(4.5 \times 10^{22} \mathrm{~m}^{-3}\). Now, the electron density \(\left(\right.\) in \(\mathrm{m}^{-3}\) ) in doped germanium will be:
150573 In a semiconducting material \(\left(\frac{1}{5}\right)^{\text {th }}\) of the total current is carried by the holes and the remaining is carried by the electrons. The drift speed of electrons is twice that of holes at this temperature, the ratio between the number densities of electrons and holes is
150587 The intrinsic carrier concentration of silicon sample at \(300 \mathrm{~K}\) is \(1.5 \times 10^{16} \mathrm{~m}^{-3}\). What is the density of minority carrier? (after doping, the number of majority carriers is \(5 \times \mathbf{1 0}^{\mathbf{2 0}} \mathrm{m}^{-\mathbf{3}}\) )
150564 The density of electron-hole pair in a pure germanium is \(\mathbf{3} \times \mathbf{1 0}^6 \mathrm{~m}^{-3}\) at room temperature. On doping with aluminium, the hole density increases to \(4.5 \times 10^{22} \mathrm{~m}^{-3}\). Now, the electron density \(\left(\right.\) in \(\mathrm{m}^{-3}\) ) in doped germanium will be:
150573 In a semiconducting material \(\left(\frac{1}{5}\right)^{\text {th }}\) of the total current is carried by the holes and the remaining is carried by the electrons. The drift speed of electrons is twice that of holes at this temperature, the ratio between the number densities of electrons and holes is
150587 The intrinsic carrier concentration of silicon sample at \(300 \mathrm{~K}\) is \(1.5 \times 10^{16} \mathrm{~m}^{-3}\). What is the density of minority carrier? (after doping, the number of majority carriers is \(5 \times \mathbf{1 0}^{\mathbf{2 0}} \mathrm{m}^{-\mathbf{3}}\) )