Types of Semi Conductors
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365601 \(C\) and \(Si\) both have same lattice structure, having 4 bonding electrons in each. However, \(C\) is insulator whereas \(Si\) is intrinsic semiconductor. This is because

1 The four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\) they lie in the third.
2 In case of \(C\), the valence bond is not completely filled at absolute zero temperature
3 In case of \(C\), the conduction band is partly filled even at absolute zero temperature
4 The four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\) they lie in the fourth orbit
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365602 Among the following,the wrong statement in the case of semiconductor is

1 Resistivity is in between that of a conductor and insulator
2 Temperature coefficient of resistance is negative
3 Doping increases conductivity
4 At absolute zero temperature it behaves like a conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365603 In intrinsic semiconductor at room temperature, number of electrons and holes are

1 equal
2 zero
3 unequal
4 infinite
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365604 At zero Kelvin a piece of germanium

1 Becomes good conductor
2 Becomes semiconductor
3 Has maximum conductivity
4 Becomes bad conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365601 \(C\) and \(Si\) both have same lattice structure, having 4 bonding electrons in each. However, \(C\) is insulator whereas \(Si\) is intrinsic semiconductor. This is because

1 The four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\) they lie in the third.
2 In case of \(C\), the valence bond is not completely filled at absolute zero temperature
3 In case of \(C\), the conduction band is partly filled even at absolute zero temperature
4 The four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\) they lie in the fourth orbit
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365602 Among the following,the wrong statement in the case of semiconductor is

1 Resistivity is in between that of a conductor and insulator
2 Temperature coefficient of resistance is negative
3 Doping increases conductivity
4 At absolute zero temperature it behaves like a conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365603 In intrinsic semiconductor at room temperature, number of electrons and holes are

1 equal
2 zero
3 unequal
4 infinite
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365604 At zero Kelvin a piece of germanium

1 Becomes good conductor
2 Becomes semiconductor
3 Has maximum conductivity
4 Becomes bad conductor
NEET Test Series from KOTA - 10 Papers In MS WORD WhatsApp Here
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365601 \(C\) and \(Si\) both have same lattice structure, having 4 bonding electrons in each. However, \(C\) is insulator whereas \(Si\) is intrinsic semiconductor. This is because

1 The four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\) they lie in the third.
2 In case of \(C\), the valence bond is not completely filled at absolute zero temperature
3 In case of \(C\), the conduction band is partly filled even at absolute zero temperature
4 The four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\) they lie in the fourth orbit
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365602 Among the following,the wrong statement in the case of semiconductor is

1 Resistivity is in between that of a conductor and insulator
2 Temperature coefficient of resistance is negative
3 Doping increases conductivity
4 At absolute zero temperature it behaves like a conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365603 In intrinsic semiconductor at room temperature, number of electrons and holes are

1 equal
2 zero
3 unequal
4 infinite
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365604 At zero Kelvin a piece of germanium

1 Becomes good conductor
2 Becomes semiconductor
3 Has maximum conductivity
4 Becomes bad conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365601 \(C\) and \(Si\) both have same lattice structure, having 4 bonding electrons in each. However, \(C\) is insulator whereas \(Si\) is intrinsic semiconductor. This is because

1 The four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\) they lie in the third.
2 In case of \(C\), the valence bond is not completely filled at absolute zero temperature
3 In case of \(C\), the conduction band is partly filled even at absolute zero temperature
4 The four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\) they lie in the fourth orbit
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365602 Among the following,the wrong statement in the case of semiconductor is

1 Resistivity is in between that of a conductor and insulator
2 Temperature coefficient of resistance is negative
3 Doping increases conductivity
4 At absolute zero temperature it behaves like a conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365603 In intrinsic semiconductor at room temperature, number of electrons and holes are

1 equal
2 zero
3 unequal
4 infinite
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365604 At zero Kelvin a piece of germanium

1 Becomes good conductor
2 Becomes semiconductor
3 Has maximum conductivity
4 Becomes bad conductor