365597 If an intrinsic semiconductor is heated, the ratio of free electrons to holes is

365598 Due to diffusion of electrons from \(n\) to \(p\)-side.
I.
An ionised acceptor is left in the \(p\)-region
II.
An ionised donor is left in the \(n\)-region
III.
Electrons of \(n\)-side comes to \(p\)-side and electron-hole combination takes place in \(p\)-side

365599 The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the :

365600 In an intrinsic semiconductor, at an ordinary temperature, the correct relation between the number of electrons per unit volume \({n_e}\) and number of holes per unit volume \({n_e}\)

365597 If an intrinsic semiconductor is heated, the ratio of free electrons to holes is

365598 Due to diffusion of electrons from \(n\) to \(p\)-side.
I.
An ionised acceptor is left in the \(p\)-region
II.
An ionised donor is left in the \(n\)-region
III.
Electrons of \(n\)-side comes to \(p\)-side and electron-hole combination takes place in \(p\)-side

365599 The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the :

365600 In an intrinsic semiconductor, at an ordinary temperature, the correct relation between the number of electrons per unit volume \({n_e}\) and number of holes per unit volume \({n_e}\)

365597 If an intrinsic semiconductor is heated, the ratio of free electrons to holes is

365598 Due to diffusion of electrons from \(n\) to \(p\)-side.
I.
An ionised acceptor is left in the \(p\)-region
II.
An ionised donor is left in the \(n\)-region
III.
Electrons of \(n\)-side comes to \(p\)-side and electron-hole combination takes place in \(p\)-side

365599 The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the :

365600 In an intrinsic semiconductor, at an ordinary temperature, the correct relation between the number of electrons per unit volume \({n_e}\) and number of holes per unit volume \({n_e}\)

365597 If an intrinsic semiconductor is heated, the ratio of free electrons to holes is

365598 Due to diffusion of electrons from \(n\) to \(p\)-side.
I.
An ionised acceptor is left in the \(p\)-region
II.
An ionised donor is left in the \(n\)-region
III.
Electrons of \(n\)-side comes to \(p\)-side and electron-hole combination takes place in \(p\)-side

365599 The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the :

365600 In an intrinsic semiconductor, at an ordinary temperature, the correct relation between the number of electrons per unit volume \({n_e}\) and number of holes per unit volume \({n_e}\)